Herbert Zirath

Articles in Scholarly Journals [Incomplete List]

  1. DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
    Semiconductor Science and Technology, vol. 22, no. 7, pp. 717–721, 2007
  2. 60 GHz Single-Chip Front-End MMICs and Systems for Multi-Gb/s Wireless Communication
    IEEE Journal of Solid-State Circuits, vol. 42, no. 5, pp. 1143–1157, 2007
  3. Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs
    IEEE Electron Device Letters, vol. 28, no. 6, pp. 476–478, 2007
  4. High-Power-Density 4H-SiC RF MOSFETs
    IEEE Electron Device Letters, vol. 27, no. 6, pp. 469–471, 2006
  5. Fabrication and Characterization of Field-Plated Buried-Gate SiC MESFETs
    IEEE Electron Device Letters, vol. 27, no. 7, pp. 573–575, 2006
  6. Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology
    IEEE Microwave and Wireless Components Letters, vol. 16, no. 1, pp. 25–27, 2006
  7. Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
    IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2413–2417, 2006
  8. High Gain Active Microstrip Antenna for 60-GHz WLAN/WPAN Applications
    IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 6, pp. 2593–2603, 2006
  9. A 45-dB Variable-Gain Low-Noise MMIC Amplifier
    IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 6, pp. 2848–2855, 2006
  10. High-Purity 60-GHz-Band Single-Chip$times$8 Multipliers in pHEMT and mHEMT Technology
    IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 6, pp. 2887–2898, 2006
  11. An SiC MESFET-Based MMIC Process
    IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 12, pp. 4072–4078, 2006
  12. 60 GHz MMIC double balanced Gilbert mixer in mHEMT technology with integrated RF, LO and IF baluns
    Electronics Letters, vol. 42, no. 24, p. 1402, 2006
  13. Transmission electron microscopy assessment of the Si enhancement of Ti∕Al∕Ni∕Au Ohmic contacts to undoped AlGaN∕GaN heterostructures
    Journal of Applied Physics, vol. 100, no. 3, p. 034904, 2006
  14. Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD
    physica status solidi (c), vol. 3, no. 6, pp. 2231–2236, 2006
  15. Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As–In0.40Al0.60As–InP HEMT MMIC technology
    Solid-State Electronics, vol. 50, no. 5, pp. 858–864, 2006
  16. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
    Journal of Applied Physics, vol. 98, no. 1, p. 016109, 2005
  17. Balanced Colpitt Oscillator MMICs Designed for Ultra-Low Phase Noise
    IEEE Journal of Solid-State Circuits, vol. 40, no. 10, pp. 2077–2086, 2005
  18. Highly Integrated 60 GHz Transmitter and Receiver MMICs in a GaAs pHEMT Technology
    IEEE Journal of Solid-State Circuits, vol. 40, no. 11, pp. 2174–2186, 2005
  19. <tex>$L$</tex>-Band LDMOS Power Amplifiers Based on an Inverse Class-F Architecture
    IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 6, pp. 2007–2012, 2005
  20. Lumped-Element Quadrature Power Splitters Using Mixed Right/Left-Handed Transmission Lines
    IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 8, pp. 2616–2621, 2005
  21. High Field-Effect Mobility in n-Channel Si Face 4H-SiC MOSFETs With Gate Oxide Grown on Aluminum Ion-Implanted Material
    IEEE Electron Device Letters, vol. 26, no. 2, pp. 96–98, 2005
  22. Low-Resistance Si/Ti/Al/Ni/Au Multilayer Ohmic Contact to Undoped AlGaN/GaN Heterostructures
    Electrochemical and Solid-State Letters, vol. 7, no. 4, p. G72, 2004
  23. Fabrication and Characterization of Reactively Sputtered TaN Thin-Film Resistors for Millimeter Wave Applications
    Electrochemical and Solid-State Letters, vol. 7, no. 11, p. G261, 2004
  24. A Comprehensive Analysis of IMD Behavior in RF CMOS Power Amplifiers
    IEEE Journal of Solid-State Circuits, vol. 39, no. 1, pp. 24–34, 2004
  25. Development of 60-GHz Front-End Circuits for a High-Data-Rate Communication System
    IEEE Journal of Solid-State Circuits, vol. 39, no. 10, pp. 1640–1649, 2004
  26. High field effect mobility in Si face 4H-SiC MOSFET transistors
    Electronics Letters, vol. 40, no. 8, p. 508, 2004
  27. 4H-silicon carbide schottky barrier diodes for microwave applications
    IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 3, pp. 796–804, 2003
  28. Cryogenic wide-band ultra-low-noise if amplifiers operating at ultra-low DC power
    IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 6, pp. 1705–1711, 2003
  29. 90-nm CMOS for microwave power applications
    IEEE Microwave and Wireless Components Letters, vol. 13, no. 12, pp. 523–525, 2003
  30. On the performance of low-noise low-DC-power-consumption cryogenic amplifiers
    IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 6, pp. 1480–1486, 2002
  31. Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
    IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 12, pp. 2834–2842, 2002
  32. Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies
    IEEE Transactions on Instrumentation and Measurement, vol. 51, no. 4, pp. 650–655, 2002
  33. A balanced FET FMCW radar transceiver with improved AM noise performance
    IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 4, pp. 1224–1227, 2002
  34. 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
    IEEE Electron Device Letters, vol. 23, no. 4, pp. 206–208, 2002
  35. Resistive SiC-MESFET mixer
    IEEE Microwave and Wireless Components Letters, vol. 12, no. 4, pp. 119–121, 2002
  36. Initial growth of GaN on a-Al[sub 2]O[sub 3](0001) by molecular beam epitaxy
    Applied Physics Letters, vol. 81, no. 4, p. 664, 2002
  37. Room-temperature and 50 GHz operation of a functional nanomaterial
    Applied Physics Letters, vol. 79, no. 9, p. 1357, 2001
  38. Design and characterisation of singly balanced silicon carbide Schottky diode high-level mixer
    Electronics Letters, vol. 37, no. 1, p. 54, 2001
  39. Microwave silicon carbide Schottky diodes
    Electronics Letters, vol. 37, no. 4, p. 250, 2001
  40. Analog MMICs for millimeter-wave applications based on a commercial 0.14-µm pHEMT technology
    IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 11, pp. 2086–2092, 2001
  41. Characterization and performance of MOCVD grown 0.14-µm InP-HEMTs for low voltage applications
    Materials Science and Engineering B, vol. 74, no. 1-3, pp. 137–142, 2000
  42. Semiconductor Science and Technology, vol. 15, no. 7, pp. 728–735, 2000
  43. Semiconductor Science and Technology, vol. 15, no. 8, pp. 799–805, 2000
  44. Semiconductor Science and Technology, vol. 16, no. 1, pp. 14–20, 2000
  45. Semiconductor Science and Technology, vol. 14, no. 8, pp. 736–739, 1999
  46. An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
    IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 12, pp. 2534–2538, 1999
  47. Characterisation and modelling of noise parameters of SiC MESFETs
    Electronics Letters, vol. 35, no. 7, p. 574, 1999
  48. Hot electron degradation effects in 0.14 µm AlInAs/GaInAs/InP HEMTs
    Microelectronics Reliability, vol. 39, no. 12, pp. 1765–1771, 1999
  49. Large signal modelling of GaAs/AlGaAs HBT's with separation of the surface recombination current
    Solid-State Electronics, vol. 43, no. 12, pp. 2163–2172, 1999
  50. Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs
    Microwave and Optical Technology Letters, vol. 20, no. 6, pp. 357–362, 1999
  51. A new extraction method for the two-parameter FET temperature noise model
    IEEE Transactions on Microwave Theory and Techniques, vol. 46, no. 11, pp. 1679–1685, 1998
  52. An algebraic method for noise parameter analysis of temperature noise models
    Microwave and Optical Technology Letters, vol. 17, no. 5, pp. 287–291, 1998
  53. A direct extraction formula for the FET temperature noise model
    Microwave and Optical Technology Letters, vol. 16, no. 4, pp. 208–212, 1997
  54. Molecular beam epitaxy growth and characterization of InxGa1 $minus; xAs (0.57 $les; x $les; 1) on GaAs using InAlAs graded buffer
    Journal of Crystal Growth, vol. 175-176, pp. 1016–1021, 1997
  55. Accurate small-signal modeling of HFET's for millimeter-wave applications
    IEEE Transactions on Microwave Theory and Techniques, vol. 44, no. 3, pp. 432–437, 1996
  56. Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation
    Physical Review B, vol. 53, no. 20, pp. R13272–R13274, 1996
  57. Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's
    IEEE Transactions on Microwave Theory and Techniques, vol. 43, no. 5, pp. 1046–1052, 1995
  58. Novel single device balanced resistive HEMT mixers
    IEEE Transactions on Microwave Theory and Techniques, vol. 43, no. 12, pp. 2863–2867, 1995
  59. DC and RF performance of 0.15 [micro sign]m gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate
    Electronics Letters, vol. 31, no. 15, p. 1292, 1995
  60. A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer
    IEEE Microwave and Guided Wave Letters, vol. 5, no. 11, pp. 394–395, 1995
  61. RF characterization of Josephson flux-flow transistors: design, modeling, and on-wafer measurement
    IEEE Transactions on Appiled Superconductivity, vol. 5, no. 2, pp. 3385–3388, 1995
  62. A 40-GHz integrated quasi-optical slot HFET mixer
    IEEE Transactions on Microwave Theory and Techniques, vol. 42, no. 12, pp. 2492–2497, 1994
  63. New empirical nonlinear model for HEMT devices
    Electronics Letters, vol. 28, no. 2, p. 140, 1992
  64. On the performance of different types of MESFET-mixers
    Microwave and Optical Technology Letters, vol. 4, no. 12, pp. 517–521, 1991
  65. Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes
    IEEE Transactions on Microwave Theory and Techniques, vol. 36, no. 11, pp. 1469–1475, 1988
  66. Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions
    IEEE Transactions on Microwave Theory and Techniques, vol. 34, no. 11, pp. 1193–1201, 1986
  67. A Cryogenic Millimeter-wave Schottky-diode Mixer
    IEEE Transactions on Microwave Theory and Techniques, vol. 83, no. 2, pp. 230–235, 1983
  68. Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes
    Electronics Letters, vol. 19, no. 20, p. 853, 1983
  69. Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy
    Electronics Letters, vol. 18, no. 10, p. 424, 1982