Articles in Scholarly Journals [Incomplete List]

1. Preface
   Materials Science in Semiconductor Processing, vol. 9, no. 6, pp. 859–859, 2006
2. Ab initio study of point defects in dielectrics based on Pr oxides
   Materials Science in Semiconductor Processing, vol. 9, no. 6, pp. 897–903, 2006
3. Pr2O3/Si(001) interface reactions and stability
   Materials Science and Engineering B, 2004
4. Solid-state reaction between Pr and SiO studied by photoelectron spectroscopy and ab initio calculations
   Materials Science in Semiconductor Processing, vol. 7, no. 4-6, pp. 215–220, 2004
5. First investigation of metal–insulator–metal (MIM) capacitor using PrO dielectrics
   Materials Science in Semiconductor Processing, vol. 7, no. 4-6, pp. 227–230, 2004
6. Silicate layer formation at Pr[sub 2]O[sub 3]/Si(001) interfaces
   Applied Physics Letters, vol. 85, no. 1, p. 88, 2004
7. Surface Review and Letters, vol. 10, no. 6, p. 849, 2003
8. Mechanism of dopant segregation to SiO_{2}/Si(001) interfaces
   Physical Review B, vol. 65, no. 24, 2002
9. Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability
   Journal of Applied Physics, vol. 90, no. 7, p. 3578, 2001
10. Mechanism of dopant segregation to SiO[sub 2]/Si(001) interfaces
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 4, p. 2160, 2000
11. Cross-sectional STM/STS — a useful tool for identification of dopants in silicon
    Solid-State Electronics, vol. 44, no. 5, pp. 875–880, 2000
12. Surface reconstruction suggests a nucleation mechanism in bulk: Sb/Si(113) and ?113? planar defects
    Surface Science, vol. 411, no. 1-2, pp. 54–60, 1998
13. Separation of the bulk and surface components in Auger electron spectroscopy
    Applied Surface Science, vol. 135, no. 1-4, pp. 59–64, 1998
14. Low coverage adsorption of Sb4 on Si(113) studied by scanning tunneling microscopy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 2, p. 982, 1996
15. Structural models for Sb on Si(113): an experimental and theoretical STM study
    Surface Science, vol. 357-358, pp. 667–672, 1996
16. Microscopic picture of Si(113): A novel surface reconstruction, the origin of defects, and the process of adsorption. Theoretical and experimental study
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 4, p. 1597, 1995
17. A novel surface reconstruction: subsurface interstitials stabilize Si(113)3 $times; 2
    Surface Science, vol. 331-333, pp. 1022–1027, 1995
18. Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment
    Physical Review Letters, vol. 73, no. 12, pp. 1660–1663, 1994