Ashish Goel

Broadcom Corporation, USA

Ashish Goel received the B.Tech (Hons.) degree in Electronics and Electrical Communications Engineering from the Indian Institute of Technology, Kharagpur, India, in 2004 and the Ph.D. degree in Electrical Engineering from Purdue University, West Lafayette, IN, in 2010. During the summers of 2006 and 2007, he was with the ASIC Group, Backplane Technology Center (BTC), Texas Instruments, Dallas. In 2006, he worked on developing a methodology for optimum VDD–Vth assignment. In 2007, he worked on analyzing the effect of process variations on leakage power, dynamic power, and performance in 65nm and 45nm SRAM. He is currently with the Library Development Group, Broadcom Corporation, Federal Way, WA, as a Scientist, Staff Design, working on design of memories for the different business units. His research interests include the design of process and error-tolerant circuits using technology-circuit-architecture co-design for sub 50-nm technology, particularly the design of memory elements, i.e., SRAM and ?ip-?ops. Dr. Goel received the 2006–2007 Magoon Award from Purdue University for his teaching excellence

Biography Updated on 9 December 2012

Scholarly Contributions [Data Provided by scopus]

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