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Tai-Bor Wu
Articles in Scholarly Journals [Incomplete List]
Electrical and photoelectrical performances of nano-photodiode based on ZnO nanowires
Chemical Physics Letters, vol. 435, no. 1-3, pp. 119–122, 2007
Exchange biasing observed in the Co/Ir20Mn80 system
Journal of Alloys and Compounds, 2007
Improvement in charge retention in Au-nanocrystal-based memory structures by employing (Ba[sub 0.5]Sr[sub 0.5])TiO[sub 3] as control oxide
Applied Physics Letters, vol. 90, no. 18, p. 182101, 2007
The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching
Journal of Physics D: Applied Physics, vol. 40, no. 6, pp. 1635–1641, 2007
Memory characteristics of Au nanocrystals embedded in metal–oxide–semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide
Journal of Physics D: Applied Physics, vol. 40, no. 6, pp. 1673–1677, 2007
Hydrous-Plasma Treatment of Pt Electrodes for Atomic Layer Deposition of Ultrathin High-k Oxide Films
Electrochemical and Solid-State Letters, vol. 10, no. 3, p. G5, 2007
Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO[sub 2] for Gate Dielectric Applications
Journal of The Electrochemical Society, vol. 154, no. 4, p. G99, 2007
Strain Effects on the Ferromagnetic and Electronic Properties in (La[sub 0.91],Sr[sub 0.09])MnO[sub 3] Thin Films
Electrochemical and Solid-State Letters, vol. 10, no. 5, p. G29, 2007
Fabrication of Nanoscale PtO[sub x]/PZT/PtO[sub x] Capacitors by E-beam Lithography and Plasma Etching with Photoresist Mask
Electrochemical and Solid-State Letters, vol. 9, no. 3, p. C51, 2006
Preferred-Orientation Effects on the Ferromagnetic Properties of La[sub 1-x]Sr[sub x]MnO[sub 3] Films Deposited on Si Substrates
Electrochemical and Solid-State Letters, vol. 9, no. 3, p. J9, 2006
Enhancement in Ferroelectric Properties of Pb(Zr[sub 0.4]Ti[sub 0.6])O[sub 3] Thin-Film Capacitors with PtO[sub x] Electrodes
Journal of The Electrochemical Society, vol. 153, no. 6, p. F115, 2006
Conductive AFM of Percolative Metal-Insulator Transition in Polycrystalline (La[sub 0.91]Sr[sub 0.09])MnO[sub 3] Thin Films Deposited on Si Substrate
Electrochemical and Solid-State Letters, vol. 9, no. 7, p. J27, 2006
Physical Properties of Strained Artificial Superlattices of (La[sub 0.7]Ba[sub 0.3])MnO[sub 3]/LaNiO[sub 3]
Journal of The Electrochemical Society, vol. 153, no. 11, p. J117, 2006
CHARACTERISTIC OF (100)-TEXTURED (Pb x Sr 1 -x )TiO 3 THIN FILMS USED FOR DRAM AND TUNABLE DEVICE APPLICATION
Integrated Ferroelectrics, vol. 80, no. 1, pp. 395–405, 2006
Charging characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structures
Journal of Applied Physics, vol. 99, no. 2, p. 026102, 2006
Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate
Applied Physics Letters, vol. 89, no. 2, p. 022910, 2006
Energy-band parameters of atomic-layer-deposition Al[sub 2]O[sub 3]/InGaAs heterostructure
Applied Physics Letters, vol. 89, no. 1, p. 012903, 2006
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high ? dielectrics
Applied Physics Letters, vol. 89, no. 22, p. 222906, 2006
Interfacial self-cleaning in atomic layer deposition of HfO[sub 2] gate dielectric on In[sub 0.15]Ga[sub 0.85]As
Applied Physics Letters, vol. 89, no. 24, p. 242911, 2006
Nanoscale Domain Control in Multiferroic BiFeO3 Thin Films
Advanced Materials, vol. 18, no. 17, pp. 2307–2311, 2006
Surface evolution and dynamic scaling of heteroepitaxial growth of (La,Ba)MnO films on SrTiO substrates by rf magnetron sputtering
Thin Solid Films, vol. 494, no. 1-2, pp. 196–200, 2006
Preparation of heteroepitaxial LaNiO thin films on a SrTiO substrate for growing an artificial superlattice with RF sputtering
Materials Chemistry and Physics, vol. 92, no. 2-3, pp. 585–590, 2005
Effects of Nb doping on highly fatigue-resistant thin films of (PbBa)ZrO for ferroelectric memory application
Journal of Crystal Growth, vol. 274, no. 3-4, pp. 402–406, 2005
In situ characterization of lattice relaxation of the BaTiO/LaNiO superlattices epitaxially grown on SrTiO substrates
Journal of Crystal Growth, vol. 276, no. 3-4, pp. 534–540, 2005
Real-time X-ray study of roughness scaling in the initial growth of epitaxial BaTiO/LaNiO superlattices
Journal of Crystal Growth, vol. 279, no. 1-2, pp. 114–121, 2005
Characteristics of constrained ferroelectricity in PbZrO[sub 3]/BaZrO[sub 3] superlattice films
Journal of Applied Physics, vol. 97, no. 3, p. 034105, 2005
Constrained ferroelectricity in the (001)-textured superlattices of PbZrO[sub 3]/BaZrO[sub 3]
Applied Physics Letters, vol. 86, no. 11, p. 112902, 2005
On the suppression of hydrogen degradation in PbZr[sub 0.4]Ti[sub 0.6]O[sub 3] ferroelectric capacitors with PtO[sub x] top electrode
Journal of Applied Physics, vol. 98, no. 10, p. 104105, 2005
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al[sub 2]O[sub 3]
Applied Physics Letters, vol. 87, no. 25, p. 252104, 2005
Mechanism for Slow Switching Effect in Advanced Low-Voltage, High-Speed Pb(Zr<tex>$_1-rm x$</tex>Ti<tex>$_rm x$</tex>)O<tex>$_3$</tex>Ferroelectric Memory
IEEE Transactions on Device and Materials Reliability, vol. 5, no. 2, pp. 217–223, 2005
Evaluation of Strain-Dependent Dielectric Properties in BaTiO[sub 3]/LaNiO[sub 3] and (Ba,Sr)TiO[sub 3]/LaNiO[sub 3] Artificial Superlattice Films on LaNiO[sub 3]-Coated SrTiO[sub 3] Substrates
Journal of The Electrochemical Society, vol. 152, no. 9, p. F129, 2005
Enhanced polarization switching characteristics of Pb(Zr
Journal of Materials Research, vol. 19, no. 4, pp. 1043–1049, 2004
Low-Temperature Capacitor-Over-Interconnect (COI) Modular FeRAM for SOC Application
IEEE Transactions on Electron Devices, vol. 51, no. 6, pp. 920–926, 2004
Thickness Dependent Characteristics in the Growth of Pb(Zr 0.4 Ti 0.6 )O 3 Thin Films on LaNiO 3 Electrode by MOCVD
Integrated Ferroelectrics, vol. 68, no. 1, pp. 53–62, 2004
Thickness dependence of structural and electrical characteristics of ZrO[sub 2] thin films as grown on Si by chemical-vapor deposition
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 4, p. 1940, 2004
Effects of postannealing on the bulk and interfacial characteristics of ZrO[sub 2] gate dielectrics prepared on Si by metalorganic chemical vapor deposition
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 6, p. 2702, 2004
Structural characteristics of epitaxial BaTiO[sub 3]/LaNiO[sub 3] superlattice
Journal of Applied Physics, vol. 96, no. 1, p. 584, 2004
Extended-pulse excimer laser annealing of Pb(Zr[sub 1-x]Ti[sub x])O[sub 3] thin film on LaNiO[sub 3] electrode
Journal of Applied Physics, vol. 96, no. 5, p. 2779, 2004
Memory characteristics of Pt nanocrystals self-assembled from reduction of an embedded PtO[sub x] ultrathin film in metal-oxide-semiconductor structures
Applied Physics Letters, vol. 85, no. 13, p. 2595, 2004
Dielectric enhancement in (001)-textured BaTiO/LaNiO superlattice
Materials Chemistry and Physics, vol. 88, no. 2-3, pp. 433–437, 2004
X-ray reflectivity study of the structural characteristics of BaTiO/LaNiO superlattice
Thin Solid Films, vol. 469-470, pp. 500–504, 2004
Plasma etching and hydrogen blocking characteristics of PtO[sub x] thin films in ferroelectric capacitor fabrication
Applied Physics Letters, vol. 83, no. 15, p. 3147, 2003
Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films
Journal of Physics: Condensed Matter, vol. 15, no. 6, pp. 963–969, 2003
Enhanced deposition and dielectric property of Ta/sub 2/O/sub 5/ thin films on a rugged pto electrode
IEEE Transactions on Electron Devices, vol. 50, no. 5, pp. 1425–1427, 2003
Enhanced chemical vapor deposition of tantalum oxide thin films from in-situ reduction of PtO[sub x] electrode
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 2, p. 502, 2003
Dielectric properties of oriented PbZrO[sub 3] thin films grown by sol-gel process
Journal of Applied Physics, vol. 92, no. 7, p. 3990, 2002
Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O[sub 3] thin films grown by a sol-gel process
Applied Physics Letters, vol. 81, no. 19, p. 3621, 2002
Ferroelectric lead barium zirconate thin film of high fatigue resistance
Applied Physics Letters, vol. 78, no. 12, p. 1721, 2001
Deposition and properties of highly (100)-oriented barium titanate thin films on LaNiO3 electrode
Ceramics International, vol. 26, no. 6, pp. 599–603, 2000
Electrical characteristics of 25 nm Pr(ZrTi)O[sub 3] thin films grown on Si by metalorganic chemical vapor deposition
Journal of Applied Physics, vol. 88, no. 4, p. 2157, 2000
Effects of postannealing on the electrical properties of Ta[sub 2]O[sub 5] thin films deposited on TiN/T
Journal of Applied Physics, vol. 88, no. 12, p. 7242, 2000
Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)[sub 1-x]Ti[sub x]O[sub 3] (x=0–0.3) relaxor ferroelectric thin films on LaNiO[sub 3] electrode buffered Si
Applied Physics Letters, vol. 75, no. 16, p. 2485, 1999
Dielectric property of (TiO[sub 2])[sub x]-(Ta[sub 2]O[sub 5])[sub 1-x] thin films
Applied Physics Letters, vol. 72, no. 3, p. 332, 1998
In situ fixed angle X-ray reflectivity study of sputter-deposited amorphous LaNiO3 thin film on Si substrate
Physica B: Condensed Matter, vol. 248, no. 1-4, pp. 109–114, 1998
Dielectric and leakage current characteristics of Ba(Ti1-xZrx)O3 thin films deposited by rf magnetron sputtering
Thin Solid Films, vol. 334, no. 1-2, pp. 77–81, 1998
Compositional evolution in aging duplex Fe-Mn-Al-C alloy
Materials Letters, vol. 30, no. 5-6, pp. 369–375, 1997
Low temperature deposition of Ba0.4Sr0.6TiO3 thin films on LaNiO3-buffered electrode by rf magnetron sputtering
Materials Letters, vol. 33, no. 1-2, pp. 97–100, 1997
Physical and chemical properties of the cylindrical rods SiC (x = 0.3â??1.2) grown from Si(CH)Cl by laser pyrolysis
Materials Chemistry and Physics, vol. 44, no. 1, pp. 59–66, 1996
Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin films
Applied Physics Letters, vol. 68, no. 10, p. 1430, 1996
Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications
Applied Physics Letters, vol. 69, no. 18, p. 2659, 1996
A study of group variants of martensite in Fe-Mn-Al-C alloy by transmission electron microscopy
Scripta Materialia, vol. 35, no. 6, pp. 739–747, 1996
Microstructure and nonohmic properties of binary ZnO-V2O5 ceramics sintered at 900 °C
Materials Letters, vol. 26, no. 3, pp. 199–203, 1996
X-ray absorption spectroscopic studies of sputter-deposited LaNiO3 thin films on Si substrate
Journal of Applied Physics, vol. 80, no. 4, p. 2175, 1996
Phase Transition and Ferroelectric Characteristics of Pb[(Mg1/3Nb2/3)1-xTix]O3 Ceramics Modified with La(Mg2/3Nb1/3)O3
Journal of the American Ceramic Society, vol. 78, no. 8, pp. 2168–2174, 1995
Properties of highly (100)-oriented thin films of sol-gel derived Pb[(Mg1/3Nb2/3)xTi1-x]O3 on (100)-textured LaNiO3 electrode
Materials Letters, vol. 23, no. 4-6, pp. 221–226, 1995
Donor-doping effect in the growth of Hg1-xCdxTe heterolayers by slider liquid phase epitaxy
Journal of Crystal Growth, vol. 154, no. 1-2, pp. 34–40, 1995
Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3
Applied Physics Letters, vol. 66, no. 20, p. 2643, 1995
Crystallization and microstructure study of radio frequency magnetron sputtered PbTiO3 films on silicon
Materials Chemistry and Physics, vol. 36, no. 3-4, pp. 337–342, 1994
Dielectric (Pb0.91 La0.09)(Mg0.25 Nb0.40 Ti0.35)O3 thin films on Pt/Ti electrodes prepared by r.f. magnetron sputtering
Materials Chemistry and Physics, vol. 38, no. 4, pp. 369–376, 1994
Transition of Compensating Defect Mode in Niobium-Doped Barium Titanate
Journal of the American Ceramic Society, vol. 77, no. 3, pp. 759–764, 1994
Electrical Properties of High-Temperature Annealed Boron-Implanted Hg0.7Cd0.3Te
Japanese Journal of Applied Physics, vol. 31, no. Part 1, No. 6A, pp. 1870–1871, 1992
Structure Evolution from Pb(Mg1/3Nb2/3)O3 to La(Mg2/3Nb1/3)O3
Journal of the American Ceramic Society, vol. 74, no. 6, pp. 1360–1363, 1991
Morphotropic phase boundaries in the ternary system of Pb(Mg1/3Nb2/3)O3-La(Mg2/3Nb1/3)O3-PbTiO3
Materials Letters, vol. 11, no. 5-7, pp. 222–225, 1991
Growth of Hg1-xCdxTe heterolayers by slider LPE using separate compensating atmosphere of mercury
Journal of Crystal Growth, vol. 113, no. 3-4, pp. 520–526, 1991
Densification and microstructure development in the reaction sintering process of yttrium iron garnet
Journal of Materials Science, vol. 25, no. 8, pp. 3566–3572, 1990
Ordering Behavior of Lead Magnesium Niobate Ceramics with A-Site Substitution
Journal of the American Ceramic Society, vol. 73, no. 5, pp. 1253–1256, 1990
Wetting Reaction between Lithium Fluoride and Barium Titanate
Journal of the American Ceramic Society, vol. 72, no. 9, pp. 1709–1712, 1989
Low temperature LPE of Hg1-xCdxTe from Te-rich solution and its effects
Journal of Crystal Growth, vol. 94, no. 2, pp. 499–506, 1989
The influence of sintering aids on the texture and remanence of Nd-Fe-B magnet alloys
Journal of Magnetism and Magnetic Materials, vol. 78, no. 2, pp. 283–290, 1989
The role of microstructural features in abrasive wear of a D-2 tool steel
Journal of Materials Science, vol. 23, no. 5, pp. 1610–1614, 1988
A new attachment for stable control of mercury pressure in the slider LPE of Hg1-xCdxTe
Journal of Crystal Growth, vol. 87, no. 2-3, pp. 161–168, 1988
Preparation of yttrium iron garnet by reaction sintering
Materials Research Bulletin, vol. 22, no. 11, pp. 1475–1482, 1987
Densification and Microstructural Development of SrTiO3 Sintered with V2O5
Journal of the American Ceramic Society, vol. 70, no. 10, pp. C-260–C-264, 1987