Personal Home Page

http://www.ntu.edu.sg/eee/eee6/cv/edhzhang.htm

Articles in Scholarly Journals [Incomplete List]

1. Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles
   Optical and Quantum Electronics, vol. 38, no. 12-14, pp. 1101–1106, 2007
2. Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate
   Infrared Physics & Technology, vol. 50, no. 2-3, pp. 119–123, 2007
3. Interdiffusion effect on GaAsSbN/GaAs quantum well structure studied by 10-band k•p model
   Thin Solid Films, vol. 515, no. 10, pp. 4435–4440, 2007
4. 1.31 µm GaAs-based heterojunction p–i–n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy
   Thin Solid Films, vol. 515, no. 10, pp. 4441–4444, 2007
5. InGaAsP/InP long wavelength quantum well infrared photodetectors
   Thin Solid Films, vol. 515, no. 10, pp. 4450–4453, 2007
6. Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection
   Journal of Applied Physics, vol. 101, no. 3, p. 033114, 2007
7. Interdiffusion in narrow InGaAsN/GaAs quantum wells
   Journal of Applied Physics, vol. 101, no. 10, p. 103111, 2007
8. GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 µm
   Applied Physics Letters, vol. 91, no. 5, p. 051102, 2007
9. Band structure investigation of strained Si1-xGex/Si coupled quantum wells
   International Journal of Nanotechnology, vol. 4, no. 4, p. 431, 2007
10. Transverse electric dominant intersubband absorption in Si-doped GaInAsN/GaAs quantum wells
    Journal of Applied Physics, vol. 99, no. 4, p. 043514, 2006
11. Study of the interdiffusion effect on the band structures of Si[sub 1-x]Ge[sub x]/Si quantum wells
    Journal of Applied Physics, vol. 99, no. 7, p. 076108, 2006
12. Bound electrical charges in BaTiO_{3} ferroelectric thin films: Evidence for spontaneous polarization
    Physical Review B, vol. 73, no. 21, 2006
13. Optical magnetic response from parallel plate metamaterials
    Physical Review B, vol. 74, no. 19, 2006
14. Ta/SiCN bilayer barrier for Cu–ultra low k integration
    Thin Solid Films, vol. 504, no. 1-2, pp. 235–238, 2006
15. Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
    Thin Solid Films, vol. 504, no. 1-2, pp. 265–268, 2006
16. Infrared absorption and current–voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy
    Journal of Crystal Growth, vol. 288, no. 1, pp. 36–39, 2006
17. Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
    Journal of Crystal Growth, vol. 275, no. 3-4, pp. 440–447, 2005
18. Metal?organic chemical vapor deposited copper interconnects for deep submicron integrated circuits
    Thin Solid Films, vol. 471, no. 1-2, pp. 270–272, 2005
19. Characterizations of InzGa1-z As1-x-yN xSby P-i-N structures grown on GaAs by molecular beam epitaxy
    Journal of Materials Science: Materials in Electronics, vol. 16, no. 5, pp. 301–307, 2005
20. Study of interdiffusion in GaInNAs/GaAs quantum well structure emitting at 1.3 µm by eight-band k·p method
    Journal of Applied Physics, vol. 97, no. 10, p. 103718, 2005
21. Study of interdiffusion in GaAsSbN/GaAs quantum well structure by ten-band k·p method
    Journal of Applied Physics, vol. 98, no. 2, p. 026102, 2005
22. Growth of p-type GaAs/AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
    Journal of Applied Physics, vol. 98, no. 5, p. 054905, 2005
23. GaAs-Based Heterojunction p-i-n Photodetectors Using Pentanary InGaAsNSb as the Intrinsic Layer
    IEEE Photonics Technology Letters, vol. 17, no. 9, pp. 1932–1934, 2005
24. International Journal of Nanoscience, vol. 3, no. 4 & 5, p. 471, 2004
25. International Journal of Nanoscience, vol. 3, no. 4 & 5, p. 481, 2004
26. Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines
    Electronics Letters, vol. 40, no. 12, p. 729, 2004
27. Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources
    Journal of Crystal Growth, vol. 268, no. 3-4, pp. 401–405, 2004
28. Study of interactions between ?-Ta films and SiO2 under rapid thermal annealing
    Thin Solid Films, vol. 462-463, pp. 279–283, 2004
29. Thermal stability of Cu/?-Ta/SiO2/Si structures
    Thin Solid Films, vol. 462-463, pp. 284–287, 2004
30. Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology
    Thin Solid Films, vol. 462-463, pp. 172–175, 2004
31. Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration
    Thin Solid Films, vol. 462-463, pp. 176–181, 2004
32. Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnects
    Thin Solid Films, vol. 462-463, pp. 182–185, 2004
33. Barrier layer effects on reliabilities of copper metallization
    Thin Solid Films, vol. 462-463, pp. 288–291, 2004
34. Study of copper diffusion into Ta and TaN barrier materials for MOS devices
    Thin Solid Films, vol. 462-463, pp. 240–244, 2004
35. A new method for deposition of cubic Ta diffusion barrier for Cu metallization
    Thin Solid Films, vol. 434, no. 1-2, pp. 126–129, 2003
36. Oxidation behavior of CNTs and the electric double layer capacitor made of the CNT electrodes
    Science in China Series E, vol. 46, no. 4, p. 349, 2003
37. Study of InGaAsP/InP multiple quantum wells grown by solid source molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, p. 1940, 2003
38. Electrooptic polymer modulators with an inverted-rib waveguide structure
    IEEE Photonics Technology Letters, vol. 15, no. 2, pp. 218–220, 2003
39. International Journal of Modern Physics B [Condensed Matter Physics; Statistical Physics; Applied Physics], vol. 16, no. 1 & 2, p. 100, 2002
40. Barrier-free direct-contact-via (DCV) structures for copper interconnects
    Electronics Letters, vol. 38, no. 18, p. 1026, 2002
41. Compressively strained p-type InGaAs/AlGaAs quantum-well infrared photodetectors
    Journal of Applied Physics, vol. 92, no. 10, p. 6287, 2002
42. Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy
    Journal of Crystal Growth, vol. 245, no. 1-2, pp. 9–14, 2002
43. High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources
    Materials Science in Semiconductor Processing, vol. 4, no. 6, pp. 631–636, 2001
44. Comparative Study of Ionized Metal Plasma Ta, TaN and Multistacked Ta/TaN Structure as Diffusion Barriers for Cu Metallization
    Surface Review and Letters, vol. 8, no. 5, pp. 459–464, 2001
45. Surface and Structural Properties of Copper Films Deposited by Metal Organic Chemical Vapor Deposition for Si Technology
    Surface Review and Letters, vol. 8, no. 5, pp. 533–536, 2001
46. Study of Cu Diffusion in Cu/TaN/SiO2/Si Multilayer Structures
    Surface Review and Letters, vol. 8, no. 5, pp. 527–532, 2001
47. Interfacial Property of the Pseudomorphic InGaAs/AlGaAs Multiple Quantum Wells
    Surface Review and Letters, vol. 8, no. 5, pp. 537–540, 2001
48. Effect of a thin ionized-metal-plasma deposited Cu layer on the properties and thermal stability of Cu-TaN-SiO/sub 2/-Si structures
    IEEE Transactions on Device and Materials Reliability, vol. 1, no. 4, pp. 174–178, 2001
49. Growth of SiCN films by magnetron sputtering
    Surface Engineering, vol. 16, no. 3, pp. 225–228, 2000
50. GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 4, p. 2274, 2000
51. Optical properties of p-type InGaAs/AlGaAs multiple quantum well structures
    Microelectronic Engineering, vol. 51-52, no. 1-4, pp. 181–187, 2000
52. Schottky contacts on wide bandgap InGaP grown with phosphorous cracker cells and their thermal reliability
    Materials Science and Engineering B, vol. 74, no. 1-3, pp. 143–146, 2000
53. Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell
    Journal of Crystal Growth, vol. 211, no. 1-4, pp. 384–388, 2000
54. Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell
    Journal of Crystal Growth, vol. 210, no. 4, pp. 458–462, 2000
55. Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD
    Thin Solid Films, vol. 377-378, no. 1-2, pp. 607–610, 2000
56. Effects of nitrogen fraction on the structure of amorphous silicon–carbon–nitrogen alloys
    Thin Solid Films, vol. 377-378, no. 1-2, pp. 562–566, 2000
57. Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy
    Applied Physics Letters, vol. 76, no. 24, p. 3579, 2000
58. Six-band k·p approach to the effects of doping on energy dispersion in p-type strained In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.33/Ga/sub 0.67/As quantum-well structures
    IEEE Journal of Quantum Electronics, vol. 36, no. 7, pp. 835–841, 2000
59. Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy
    Applied Physics Letters, vol. 74, no. 11, p. 1570, 1999
60. Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production
    Journal of Crystal Growth, vol. 197, no. 1-2, pp. 89–94, 1999
61. Characterisation of p-doped InGaAs/AlGaAs quantum wells for infrared photodetector application
    Journal of Crystal Growth, vol. 198-199, pp. 1141–1145, 1999
62. Metal contacts to n-type AlGaAs grown by molecular beam epitaxy
    Materials Science and Engineering B, vol. 60, no. 3, pp. 189–193, 1999
63. Low threshold current vertical-cavity surface-emitting lasers grown at a fixed temperature
    Microelectronic Engineering, vol. 43-44, pp. 533–537, 1998
64. Dark current and infrared absorption of p-doped InGaAs/AlGaAs strained quantum wells
    Applied Physics Letters, vol. 73, no. 8, p. 1095, 1998
65. Carbon incorporation in GaAs/Al0.2Ga0.8As triple quantum wells and its effect on laser performance
    Superlattices and Microstructures, vol. 24, no. 2, pp. 119–125, 1998
66. Influence of substrate misorientation on quality of active region and performance of GaAs/AlGaAs triple-quantum-well lasers grown by molecular beam epitaxy
    Journal of Crystal Growth, vol. 181, no. 1-2, pp. 1–8, 1997
67. Photoluminescence and dark current of p-doped InGaAs/AlxGa1-xAs strained multiple quantum wells
    Superlattices and Microstructures, vol. 20, no. 1, pp. 105–110, 1996
68. Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy
    Journal of Crystal Growth, vol. 165, no. 1-2, pp. 15–18, 1996
69. Sequential tunneling through n-type GaAs/AlGaAs multi-quantum-well structures with Schottky and ohmic contacts
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 1, p. 4, 1995
70. Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy
    Materials Science and Engineering B, vol. 35, no. 1-3, pp. 449–453, 1995
71. Space charge buildup in tight-binding superlattices induced by electron sequential tunneling
    Superlattices and Microstructures, vol. 18, no. 2, pp. 83–90, 1995
72. Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence
    Journal of Crystal Growth, vol. 148, no. 1-2, pp. 35–40, 1995
73. The effect of As/Ga flux ratio on Si-doped GaAs layers grown by molecular beam epitaxy
    Journal of Crystal Growth, vol. 135, no. 3-4, pp. 441–446, 1994
74. Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p-doped InGaAs/AlGaAs strained multiple quantum wells
    Applied Physics Letters, vol. 65, no. 11, p. 1430, 1994
75. Photoluminescence studies of strained InxGa1-xAs-Al0.28Ga0.72As heterostructures grown by molecular-beam epitaxy
    Journal of Applied Physics, vol. 76, no. 1, p. 246, 1994
76. The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy
    Journal of Crystal Growth, vol. 131, no. 1-2, pp. 1–4, 1993
77. Investigation of Persistent Photoconductivity from Compensated Amorphous Hydrogenated Silicon
    Japanese Journal of Applied Physics, vol. 32, no. Part 1, No. 2, pp. 722–725, 1993
78. Metal contacts on amorphous hydrogenated silicon: effects of annealing
    Thin Solid Films, vol. 208, no. 1, pp. 87–90, 1992
79. Conductivity and defects in amorphous silicon doping modulated multilayers
    Thin Solid Films, vol. 198, no. 1-2, pp. 43–51, 1991
80. Fluorinated hydrogenated silicon films
    Thin Solid Films, vol. 186, no. 2, pp. L47–L50, 1990
81. Special conductivity effects in amorphous hydrogenated silicon
    Applied Surface Science, vol. 33-34, pp. 692–704, 1988