Dieter Bimberg

Dieter Bimberg received the Diploma in physics and the Ph.D. degree from Goethe University, Frankfurt, in 1968 and 1971, respectively. From 1972 to 1979, he held a Principal Scientist position at the Max-Planck Institute for Solid State Research in Grenoble/France and Stuttgart. In 1979, he was appointed as a Professor of electrical engineering, Technical University of Aachen. Since 1981, he holds the chair of Applied Solid State Physics Institute at Technical University of Berlin. He was elected in 1990 and successively reelected as an Excecutive Director of the Solid State Physics Institute at TU, Berlin. In addition, since 2004, he is the Director of the Center of Nanophotonics at TU, Berlin. Since 1998, he is Chairman of the National Government Center of Competence NanoOptoelectronics. In 2006, he was elected as Chairman of the board of the German National Centers of Excellence of Nanotechnologies AGeNT. His honors include the Russian State Prize in Science and Technology, 2001, the Max-Born Award and Medal, 2006, awarded jointly by IoP and DPG, in 2004 his election to the German Academy of Natural Sciences Leopoldina and as a Fellow of the American Physical Society. He has authored more than 800 papers, patents, and books resulting in more than 16000 citations worldwide. His research interests include the growth and physics of nanostructures and photonic devices, like quantum dot lasers and amplifiers, single photon emitters, wide-gap semiconductor heterostructures, and ultrahigh speed photonic devices.

Biography Updated on 23 April 2007

Articles in Scholarly Journals [Incomplete List]

  1. MBE-grown metamorphic lasers for applications at telecom wavelengths
    Journal of Crystal Growth, vol. 301-302, pp. 914–922, 2007
  2. MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3µm
    Journal of Crystal Growth, vol. 298, pp. 591–594, 2007
  3. MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section
    Journal of Crystal Growth, vol. 301-302, pp. 945–950, 2007
  4. Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots
    Journal of Luminescence, vol. 122-123, pp. 735–739, 2007
  5. Dependence of the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots on the quantum dot size
    physica status solidi (b), vol. 244, no. 1, pp. 53–58, 2007
  6. Relaxation dynamics of bimodally distributed CdSe quantum dots
    Physical Review B, vol. 75, no. 3, 2007
  7. Metastable states of surface nanostructure arrays studied using a Fokker-Planck equation
    Physical Review B, vol. 75, no. 8, 2007
  8. Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs
    physica status solidi (c), vol. 3, no. 3, pp. 391–394, 2006
  9. Tunneling emission from self-organized In(Ga)Asâ??GaAs quantum dots observed via time-resolved capacitance measurements
    Physical Review B, vol. 73, no. 20, 2006
  10. Electronic and optical properties of InAsâ??InP quantum dots on InP(100) and InP(311)B substrates: Theory and experiment
    Physical Review B, vol. 74, no. 3, 2006
  11. Charge and spin storage in self-organized quantum dots
    Applied Physics Letters, vol. 88, no. 18, p. 182107, 2006
  12. Single mode cw operation of 658 nm AlGaInP lasers based on longitudinal photonic band gap crystal
    Applied Physics Letters, vol. 88, no. 23, p. 231108, 2006
  13. Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 µm
    Applied Physics Letters, vol. 88, no. 26, p. 262104, 2006
  14. Degradation-robust single mode continuous wave operation of 1.46 µm metamorphic quantum dot lasers on GaAs substrate
    Applied Physics Letters, vol. 89, no. 4, p. 041113, 2006
  15. Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy
    Applied Physics Letters, vol. 89, no. 6, p. 061105, 2006
  16. Carrier storage time of milliseconds at room temperature in self-organized quantum dots
    Applied Physics Letters, vol. 89, no. 7, p. 072103, 2006
  17. Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth
    Applied Physics Letters, vol. 89, no. 14, p. 141106, 2006
  18. Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
    Applied Physics Letters, vol. 89, no. 16, p. 161919, 2006
  19. Hole capture into self-organized InGaAs quantum dots
    Applied Physics Letters, vol. 89, no. 23, p. 232105, 2006
  20. High power GaAs/AlGaAs lasers (?~850 nm) with ultranarrow vertical beam divergence
    Applied Physics Letters, vol. 89, no. 23, p. 231114, 2006
  21. Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
    Applied Physics Letters, vol. 89, no. 26, p. 263109, 2006
  22. Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate
    Semiconductor Science and Technology, vol. 21, no. 5, pp. 691–696, 2006
  23. Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation
    Semiconductors, vol. 40, no. 4, pp. 476–480, 2006
  24. Room-temperature 1.3-µm lasing in a microdisk with quantum dots
    Semiconductors, vol. 40, no. 9, pp. 1101–1104, 2006
  25. Self-organized formation of shell-like InAs/GaAs quantum dot ensembles
    Applied Surface Science, vol. 252, no. 15, pp. 5555–5558, 2006
  26. New method for the in situ determination of AlxGa1–xN composition in MOVPE by real-time optical reflectance
    physica status solidi (a), vol. 203, no. 7, pp. 1645–1649, 2006
  27. High speed nanophotonic devices based on quantum dots
    physica status solidi (a), vol. 203, no. 14, pp. 3523–3532, 2006
  28. Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots
    physica status solidi (b), vol. 243, no. 15, pp. 3937–3941, 2006
  29. Electrically driven single quantum dot polarised single photon emitter
    Electronics Letters, vol. 42, no. 13, p. 774, 2006
  30. Distortion-free optical amplification of 20–80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots
    Electronics Letters, vol. 42, no. 12, p. 697, 2006
  31. Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence
    Electronics Letters, vol. 42, no. 20, p. 1157, 2006
  32. Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices
    Microelectronics Journal, vol. 37, no. 12, pp. 1451–1460, 2006
  33. Structure of InAs/GaAs quantum dots grown with Sb surfactant
    Physica E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, pp. 25–28, 2006
  34. Quantum-dot size dependence of exciton fine-structure splitting
    Physica E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, pp. 101–103, 2006
  35. Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dots
    Physica E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, pp. 171–174, 2006
  36. Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots
    Physica E: Low-dimensional Systems and Nanostructures, vol. 32, no. 1-2, pp. 9–13, 2006
  37. Control of structural and excitonic properties of self-organized InAs/GaAs quantum dots
    Physica E: Low-dimensional Systems and Nanostructures, vol. 35, no. 2, pp. 285–292, 2006
  38. Osmium impurity-related deep levels in n-type GaAs
    Journal of Applied Physics, vol. 98, no. 8, p. 083709, 2005
  39. Quantum dot photonic devices for lightwave communication
    Applied Physics A, vol. 80, no. 6, pp. 1179–1182, 2005
  40. Determination of composition and strain field of a III/V quaternary quantum dot system
    Applied Physics Letters, vol. 85, no. 21, p. 4908, 2004
  41. Structure and intermixing of GaSb/GaAs quantum dots
    Applied Physics Letters, vol. 85, no. 24, p. 5890, 2004
  42. Gallium-nitride-based devices on silicon
    physica status solidi (c), vol. 0, no. 6, pp. 1940–1949, 2003
  43. 1300nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
    Journal of Crystal Growth, vol. 227-228, no. 1-4, pp. 1146–1150, 2001
  44. 1.3µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
    Journal of Crystal Growth, vol. 227-228, no. 1-4, pp. 1155–1161, 2001
  45. Rhodium-related deep levels in n-type MOCVD GaAs
    Physica B Condensed Matter, vol. 308-310, no. 1-2, pp. 816–819, 2001
  46. Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
    Materials Science and Engineering B, vol. 80, no. 1-3, pp. 108–111, 2001
  47. Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays
    Materials Science and Engineering B, vol. 82, no. 1-3, pp. 215–217, 2001
  48. Ultralong Dephasing Time in InGaAs Quantum Dots
    Physical Review Letters, vol. 87, no. 15, 2001
  49. Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots
    Physical Review B, vol. 61, no. 15, pp. 9944–9947, 2000
  50. 3.9 W CW power from sub-monolayer quantum dot diode laser
    Electronics Letters, vol. 35, no. 21, p. 1845, 1999