Mohamed A. Osman
Personal Home Page
http://www.eecs.wsu.edu/~osman
Articles in Scholarly Journals [Incomplete List]
- Molecular dynamics simulation of heat pulse propagation in single-wall carbon nanotubes
Physical Review B, vol. 72, no. 12, 2005 - Plasma-Enhanced Metal–Organic Chemical Vapor Deposition (PEMOCVD) of Catalytic Coatings for Fuel Cell Reformers
IEEE Transactions on Plasma Science, vol. 33, no. 1, pp. 138–146, 2005 - Synthesis of$rm Pt/ZrO_2$Catalyst on Fecralloy Substrates Using Composite Plasma- Polymerized Films
IEEE Transactions on Plasma Science, vol. 33, no. 6, pp. 2035–2045, 2005 - Pulsed-plasma-polymerized aniline thin films
Journal of Applied Polymer Science, vol. 93, no. 3, pp. 1317–1325, 2004 - Simulation of partially and near fully depleted SOI MOSFET devices and circuits using SPICE compatible physical subcircuit model
Microelectronics Reliability, vol. 44, no. 1, pp. 53–63, 2004 - Thermal conductivity of Y-junction carbon nanotubes
Physical Review B, vol. 70, no. 11, 2004 - Two-dimensional model for investigating body contact structures in PD SOI MOSFETs
Microelectronic Engineering, vol. 70, no. 1, pp. 83–92, 2003 - Determination and assessment of the floating-body voltage of SOI CMOS devices
IEEE Transactions on Electron Devices, vol. 48, no. 4, pp. 688–695, 2001 - Mass transport characteristics in a pulsed plasma enhanced chemical vapor deposition reactor for thin polymer film deposition
IEEE Transactions on Plasma Science, vol. 29, no. 1, pp. 42–50, 2001 - Nanotechnology, vol. 12, no. 1, pp. 21–24, 2001
- Modeling and experimental comparison of pulsed plasma deposition of aniline
Thin Solid Films, vol. 385, no. 1-2, pp. 11–21, 2001 - Modeling and measurement of monomer pressure evolution in an inductively coupled pulsed plasma reactor for thin polymer films
IEEE Transactions on Plasma Science, vol. 28, no. 6, pp. 2172–2178, 2000 - A simple method to determine the floating-body voltage of SOI CMOS devices
IEEE Electron Device Letters, vol. 21, no. 1, pp. 21–23, 2000 - Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects
Microelectronics and Reliability, vol. 39, no. 4, pp. 487–495, 1999 - Explosion model applied to an intense pulsed plasma source for thin film deposition
IEEE Transactions on Plasma Science, vol. 25, no. 1, pp. 89–96, 1997 - MOSFET global modeling for deep submicron devices with a modified BSIM1 SPICE model
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 15, no. 4, pp. 446–451, 1996 - Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET's
IEEE Transactions on Electron Devices, vol. 42, no. 9, pp. 1709–1711, 1995 - An extended Tanh law MOSFET model for high temperature circuit simulation
IEEE Journal of Solid-State Circuits, vol. 30, no. 2, pp. 147–150, 1995 - DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications
IEEE Journal of Solid-State Circuits, vol. 29, no. 2, pp. 108–116, 1994 - Modelling the threshold voltage of short-channel silicon-on-insulator MOSFETs
Electronics Letters, vol. 29, no. 5, p. 474, 1993 - High-temperature transport of electrons in diamond
Physica B: Condensed Matter, vol. 185, no. 1-4, pp. 471–474, 1993 - Autocorrelation function of velocity fluctuations and noise in diamond
Diamond and Related Materials, vol. 2, no. 1, pp. 15–18, 1993 - A large-signal GaAs MESFET model for nonlinear circuit simulation
IEEE Microwave and Guided Wave Letters, vol. 2, no. 4, pp. 135–137, 1992 - Effect of valence band anisotropy on the Ultrafast relaxation of photoexcited electrons in GaAs
Solid-State Electronics, vol. 32, no. 12, pp. 1911–1914, 1989 - Ultrafast relaxation of hot photoexcited carriers in GaAs
Solid-State Electronics, vol. 31, no. 3-4, pp. 401–406, 1988 - Carrier-carrier interaction and intervalley transfer effects on the ultrafast relaxation of photoexcited electrons in GaAs
Solid-State Electronics, vol. 31, no. 3-4, pp. 471–474, 1988 - Monte Carlo investigation of minority electron transport in In0.53Ga0.47As
Solid-State Electronics, vol. 31, no. 3-4, pp. 653–656, 1988 - Investigation of ballistic transport through resonant-tunnelling quantum wells using wigner function approach
Physica B+C, vol. 134, no. 1-3, pp. 36–40, 1985 - Nanodiffraction from platelet defects in diamond
Ultramicroscopy, vol. 15, no. 4, pp. 311–318, 1984