Albert Chin received the Ph.D. from the Department of Electrical Engineering, University of Michigan, Ann Arbor, in 1989. He was with AT&T Bell Labs, General Electric-Electronic Lab, and Texas Instruments’ Semiconductor Process & Device Center. He is a Professor with the National Chiao Tung University (NCTU), Taiwan ROC, and a visiting Professor at National University of Singapore. He has been the vice executive officer of diamond project and deputy director of multi-disciplinary research center of NCTU. He is a pioneer for low DC-power high-k metal-gate CMOS, high-k Charge-Trapping Flash memory, high-k TFT, high mobility Ge-On-Insulator (GeOI) CMOS, low AC-power 3D IC, high RF power asymmetric-LDD MOSFET, and resonant cavity photo-detector. He has published more than 400 technical papers and presentations. Dr. Chin has served as the subcommittee chair and executive committee of International Electron Devices Meeting (IEDM). He is a Fellow of IEEE.
Biography Updated on 30 December 2013