Personal Home Page

http://www.phys.ttu.edu/faculty/new_charley.html

Articles in Scholarly Journals [Incomplete List]

1. Rattling “guest” impurities in Si and Ge clathrate semiconductors
   Physica B: Condensed Matter, vol. 401-402, pp. 695–698, 2007
2. Density-functional investigation of Na16A8Ge136 (A = Rb,Cs) clathrates
   Journal of Physics: Condensed Matter, vol. 19, no. 46, p. 466206, 2007
3. Electronic and vibrational properties of framework-substituted type-II silicon clathrates
   Physical Review B, vol. 75, no. 24, 2007
4. Electronic structure of the Na_{16}Rb_{8}Si_{136} and K_{16}Rb_{8}Si_{136} clathrates
   Physical Review B, vol. 74, no. 11, 2006
5. Rattling guest atoms in Si, Ge, and Sn-based type-II clathrate materials
   physica status solidi (b), vol. 239, no. 1, pp. 26–34, 2003
6. Raman scattering study of stoichiometric Si and Ge type II clathrates
   Journal of Applied Physics, vol. 92, no. 12, p. 7225, 2002
7. Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon
   Journal of Physics and Chemistry of Solids, vol. 63, no. 9, pp. 1691–1698, 2002
8. Vibrational properties of tin clathrate materials
   Physical Review B, vol. 65, no. 23, 2002
9. Theoretical Study of the Lattice Thermal Conductivity in Ge Framework Semiconductors
   Physical Review Letters, vol. 86, no. 11, pp. 2361–2364, 2001
10. Structural and electronic properties of tin clathrate materials
    Physical Review B, vol. 64, no. 16, 2001
11. Design and testing of a rotary arc gap-switch for pulsed power
    IEEE Transactions on Plasma Science, vol. 28, no. 5, pp. 1491–1496, 2000
12. Steady-state properties of lock-on current filaments in GaAs
    IEEE Transactions on Plasma Science, vol. 28, no. 5, pp. 1497–1499, 2000
13. Deep levels including lattice relaxation: first- and second-neighbor effects
    Journal of Physics and Chemistry of Solids, vol. 61, no. 11, pp. 1855–1864, 2000
14. Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions
    physica status solidi (a), vol. 181, no. 1, pp. 219–229, 2000
15. Molecular-dynamics study of the vacancy and vacancy-hydrogen interactions in silicon
    Physical Review B, vol. 52, no. 3, pp. 1718–1723, 1995
16. Molecular-dynamics study of defect formation in a-Si:H
    Physical Review B, vol. 51, no. 3, pp. 1671–1679, 1995
17. Deep-level wave functions including lattice-relaxation effects
    Physical Review B, vol. 47, no. 8, pp. 4281–4288, 1993
18. Semiempirical total-energy functional for silicon-hydrogen interactions in solids
    Physical Review B, vol. 48, no. 23, pp. 17086–17091, 1993
19. Lock-on effect in pulsed-power semiconductor switches
    Journal of Applied Physics, vol. 71, no. 6, p. 3036, 1992
20. Effects of lattice relaxation on deep levels in semiconductors
    Physical Review B, vol. 43, no. 3, pp. 2192–2200, 1991
21. Molecular-dynamics approach to lattice-relaxation effects on deep levels in semiconductors
    Physical Review B, vol. 43, no. 12, pp. 9947–9950, 1991
22. Alloy disorder effects on the electronic properties of III-V quaternary semiconductor alloys
    Physical Review B, vol. 41, no. 6, pp. 3582–3591, 1990
23. Generalized embedded-atom format for semiconductors
    Physical Review B, vol. 41, no. 2, pp. 1247–1250, 1990
24. Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions
    Journal of Applied Physics, vol. 67, no. 11, p. 6917, 1990
25. Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1-xPx
    Journal of Applied Physics, vol. 67, no. 12, p. 7351, 1990
26. Semi-empirical tightbinding bandstructures for II–VI zincblende compounds
    Journal of Physics and Chemistry of Solids, vol. 51, no. 2, pp. 93–100, 1990
27. Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures
    Journal of Applied Physics, vol. 66, no. 6, p. 2538, 1989
28. Deep levels produced by triplet vacancy-impurity complexes in GaP
    Journal of Applied Physics, vol. 65, no. 11, p. 4273, 1989
29. Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx
    Physical Review B, vol. 40, no. 17, pp. 11947–11950, 1989
30. Theory of time-resolved luminescence of bound excitons in semiconductor alloys
    Physical Review B, vol. 39, no. 9, pp. 6216–6219, 1989
31. Deep levels associated with triplet impurity complexes in GaP
    Physical Review B, vol. 40, no. 15, pp. 10425–10429, 1989
32. Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors
    Physical Review B, vol. 40, no. 9, pp. 6222–6235, 1989
33. Alloy broadening of the deep electronic levels associated with the As vacancy in AlxGa1-xAs
    Physical Review B, vol. 38, no. 2, pp. 1210–1214, 1988
34. Phonon-assisted indirect recombination of bound excitons in N-doped GaP, including near-resonant processes
    Physical Review B, vol. 37, no. 3, pp. 1205–1217, 1988
35. Theory of alloy broadening of deep levels in semiconductor alloys: Effects of second-neighbor disorder
    Physical Review B, vol. 38, no. 15, pp. 10533–10541, 1988
36. Substrate response to atomic scattering from solid surfaces
    Journal of Physics and Chemistry of Solids, vol. 48, no. 7, pp. 621–627, 1987
37. Coherent potential approximation calculations for electronic spectra of one-dimensional quaternary alloys
    Journal of Physics and Chemistry of Solids, vol. 48, no. 4, pp. 329–340, 1987
38. Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s* bandstructures
    Journal of Physics and Chemistry of Solids, vol. 48, no. 12, pp. 1173–1184, 1987
39. Deep levels associated with vacancy-impurity complexes in GaAs
    Applied Physics Letters, vol. 51, no. 24, p. 2034, 1987
40. Electronic properties of the quaternary semiconductor alloy GaSb1-x-yAsxPy: Coherent-potential approximation
    Physical Review B, vol. 35, no. 5, pp. 2532–2535, 1987
41. Effects of alloy disorder on Schottky-barrier heights
    Physical Review B, vol. 35, no. 18, pp. 9758–9765, 1987
42. Semiempirical formalism for the calculation of deep-level wave functions in k space
    Physical Review B, vol. 33, no. 12, pp. 8234–8237, 1986
43. Theory of alloy broadening of deep levels in semiconductor alloys: Nitrogen in AlxGa1-xAs
    Physical Review B, vol. 34, no. 2, pp. 927–931, 1986
44. Coherent potential approximation for quaternary alloys: Application to phonon spectra in one dimension
    Journal of Physics and Chemistry of Solids, vol. 46, no. 11, pp. 1305–1319, 1985
45. Identification of defect centers in Hg1-xCdxTe using their energy level composition dependence
    Journal of Applied Physics, vol. 57, no. 12, p. 5279, 1985
46. Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories
    Physical Review B, vol. 32, no. 4, pp. 2685–2688, 1985
47. Alloy broadening of impurity electronic spectra: One-dimensional-model calculations for a ternary alloy
    Physical Review B, vol. 32, no. 6, pp. 3416–3421, 1985
48. Deep levels associated with (vacancy, impurity) pairs in covalent semiconductors
    Physical Review B, vol. 29, no. 12, pp. 6810–6823, 1984
49. Tight-binding view of alloy scattering in III-V ternary semiconducting alloys
    Physical Review B, vol. 29, no. 2, pp. 802–807, 1984
50. Comparison of calculated and measured GaP:N luminescence spectra
    Journal of Luminescence, vol. 31-32, pp. 448–450, 1984
51. Effects of diagonal and off-diagonal disorder on the Anderson-model densities of states in two and three dimensions
    Physical Review B, vol. 30, no. 4, pp. 1720–1723, 1984
52. Theory of alloys. III. Embedded-cluster calculations of electronic spectra for a one-dimensional ternary alloy
    Physical Review B, vol. 30, no. 6, pp. 3283–3293, 1984
53. Theory of alloys. II. Embedded-cluster calculations of phonon spectra for a one-dimensional ternary alloy
    Physical Review B, vol. 28, no. 8, pp. 4519–4534, 1983
54. Alloy broadening of impurity electronic spectra: One-dimensional tight-binding theory for a binary alloy
    Physical Review B, vol. 25, no. 6, pp. 3593–3607, 1982
55. Size dependence of the conduction-electron-spin-resonance g shift in a small sodium particle: Orthogonalized standing-wave calculations
    Physical Review B, vol. 26, no. 5, pp. 2414–2431, 1982
56. Shape dependence of the conduction-electron spin-resonance g shift in a small sodium particle
    Physical Review B, vol. 26, no. 5, pp. 2648–2651, 1982
57. Incoherent J=1?0 neutron scattering from solid H2
    Physical Review B, vol. 23, no. 9, pp. 4741–4748, 1981
58. Theory of alloy broadening of impurity electronic spectra
    Physical Review B, vol. 24, no. 2, pp. 1137–1139, 1981
59. Vibrational spectra of one-dimensional mass-disordered quaternary alloys
    Journal of Physics and Chemistry of Solids, vol. 42, no. 12, pp. 1043–1050, 1981
60. Theory of alloys. I. Embedded-cluster calculations of phonon spectra for a one-dimensional binary alloy
    Physical Review B, vol. 19, no. 10, pp. 4939–4951, 1979
61. Quadrupolar exchange effects on the dynamics of high-temperature paramagnets
    Physical Review B, vol. 19, no. 3, pp. 1331–1344, 1979
62. Model calculation of the size dependence of the CESR g shift in a small sodium particle
    Solid State Communications, vol. 30, no. 6, pp. 325–328, 1979
63. Spectra of Ternary Alloys
    Physical Review Letters, vol. 42, no. 4, pp. 254–257, 1979
64. Crystal- and magnetic-field effects on nuclear-spin—lattice relaxation in solid H2
    Physical Review B, vol. 18, no. 11, pp. 6230–6244, 1978
65. Spectral density functions for a J=1 quadrupolar solid: Application to solid H2
    Physical Review B, vol. 11, no. 6, pp. 2339–2351, 1975
66. Dynamical two-point correlation functions in a high-temperature Heisenberg paramagnet
    Physical Review B, vol. 9, no. 11, pp. 4872–4881, 1974
67. Higher-Order Acoustic-Paramagnetic-Resonance Transitions of Magnetic Impurities in Dielectrics
    Physical Review B, vol. 8, no. 5, pp. 2049–2059, 1973
68. Theory of Higher-Order Acoustic Paramagnetic-Resonance Transitions of Magnetic Ions in Dielectrics
    Physical Review Letters, vol. 28, no. 25, pp. 1620–1622, 1972