Daisaburo Takashima was born in Ishikawa, Japan, on October 21, 1962. He received the B.E., M.E., and Ph.D. degrees in electrical and electronics engineering from Sophia University, Tokyo, Japan, in 1985, 1987, and 1999, respectively. In 1987, he joined the Research and Development Center, Toshiba Corp., Kawasaki, Japan. Since then, he has been engaged in research and development of high-density DRAMs, embedded DRAM for NAND flash memories, 16Kb to 128Mb chain FeRAMs, embedded FeRAM, and application of FeRAM to SSD and HDD. His research interests include array architectures for high-density nonvolatile/volatile memories and circuit design techniques for sub-50 nm ULSIs. He is currently with the Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corp., Yokohama, Japan. He has authored and coauthored over 70 international journal papers and international conference papers including 11 invited papers, and he is the author of four book chapters. He holds over 200 patents issued in USA and Japan. Dr. Takashima is a Member of the IEEE Solid-State Circuits Society and a Member of the Institute of Electronics, Information, and Communication Engineers (IEICE) of Japan. He has been a Member of ISSCC Program Committee since 2008.
Biography Updated on 3 January 2012