Bumman Kim

Articles in Scholarly Journals [Incomplete List]

  1. A planar-type dielectric resonator and filter using LTCC process
    Microwave and Optical Technology Letters, vol. 49, no. 3, pp. 578–581, 2007
  2. High-Efficiency Push–Pull Power Amplifier With High Operation Voltage
    IEEE Microwave and Wireless Components Letters, vol. 17, no. 5, pp. 382–384, 2007
  3. Student design - Efficiency Comparison Between Highly Efficient Class-F and Inverse Class-F Power Amplifiers
    IEEE Microwave Magazine, vol. 8, no. 3, pp. 100–110, 2007
  4. The Doherty Power Amplifier With On-Chip Dynamic Bias Control Circuit for Handset Application
    IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 4, pp. 633–642, 2007
  5. Adaptive Digital Feedback Predistortion Technique for Linearizing Power Amplifiers
    IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 5, pp. 932–940, 2007
  6. Weighted Polynomial Digital Predistortion for Low Memory Effect Doherty Power Amplifier
    IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 5, pp. 925–931, 2007
  7. A Low Phase-Noise CMOS VCO With Harmonic Tuned LC Tank
    IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 7, pp. 2917–2924, 2006
  8. Improved VBIC Model for SiGe HBTs With an Unified Model of Heterojunction Barrier Effects
    IEEE Transactions on Electron Devices, vol. 53, no. 4, pp. 743–752, 2006
  9. The Doherty power amplifier
    IEEE Microwave Magazine, vol. 7, no. 5, pp. 42–50, 2006
  10. Highly Linear 0.18-$mu$m CMOS Power Amplifier With Deep n-Well Structure
    IEEE Journal of Solid-State Circuits, vol. 41, no. 5, pp. 1073–1080, 2006
  11. A Highly Linear and Efficient Differential CMOS Power Amplifier With Harmonic Control
    IEEE Journal of Solid-State Circuits, vol. 41, no. 6, pp. 1314–1322, 2006
  12. Highly Linear Three-Way Doherty Amplifier With Uneven Power Drive for Repeater System
    IEEE Microwave and Wireless Components Letters, vol. 16, no. 4, pp. 176–178, 2006
  13. A Ultra-High PAE Doherty Amplifier Basedon 0.13-$mu$m CMOS Process
    IEEE Microwave and Wireless Components Letters, vol. 16, no. 9, pp. 505–507, 2006
  14. Highly efficient LDMOS power amplifier based on class-E topology
    Microwave and Optical Technology Letters, vol. 48, no. 4, pp. 789–791, 2006
  15. Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law
    Solid-State Electronics, vol. 50, no. 5, pp. 733–740, 2006
  16. Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance
    Solid-State Electronics, vol. 50, no. 9-10, pp. 1483–1488, 2006
  17. Load modulation power amplifier with lumped-element combiner for IEEE 802.11b/g WLAN applications
    Electronics Letters, vol. 42, no. 1, p. 24, 2006
  18. A new planar-type dielectric resonator using LTCC technology for mm-wave band applications
    Microwave and Optical Technology Letters, vol. 44, no. 6, pp. 533–536, 2005
  19. Baseband stage for WCDMA direct conversion receiver with high dynamic range and accurate temperature compensation
    Electronics Letters, vol. 41, no. 7, p. 381, 2005
  20. Direct Parameter Extraction of SiGe HBTs for the VBIC Bipolar Compact Model
    IEEE Transactions on Electron Devices, vol. 52, no. 3, pp. 375–384, 2005
  21. An Optimized Design of Distributed Active Transformer
    IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 1, pp. 380–388, 2005
  22. Optimum Operation of Asymmetrical-Cells-Based Linear Doherty Power Amplifiers—Uneven Power Drive and Power Matching
    IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 5, pp. 1802–1809, 2005
  23. A Handset Power Amplifier With High Efficiency at a Low Level Using Load-Modulation Technique
    IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 8, pp. 2639–2644, 2005
  24. Optimum Design of a Predistortion RF Power Amplifier for Multicarrier WCDMA Applications
    IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 2, pp. 655–663, 2004
  25. Low-phase-noise CMOS VCO with harmonically tuned LC tank
    Microwave and Optical Technology Letters, vol. 42, no. 2, pp. 164–167, 2004
  26. Ka-band PHEMT MMIC VCO with wide tuning range
    Microwave and Optical Technology Letters, vol. 39, no. 4, pp. 333–336, 2003
  27. Determination of rotatable anisotropy in exchange-biased bilayers using anisotropic magnetoresistance technique
    Journal of Applied Physics, vol. 93, no. 10, p. 7714, 2003
  28. Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz
    IEEE Electron Device Letters, vol. 24, no. 6, pp. 384–386, 2003
  29. A microwave doherty amplifier employing envelope tracking technique for high efficiency and linearity
    IEEE Microwave and Wireless Components Letters, vol. 13, no. 9, pp. 370–372, 2003
  30. Optimization for error-canceling loop of the feedforward amplifier using a new system-level mathematical model
    IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 475–482, 2003
  31. Linearity analysis of CMOS for RF application
    IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 3, pp. 972–977, 2003
  32. A fully matched N-way doherty amplifier with optimized linearity
    IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 3, pp. 986–993, 2003
  33. Analysis of nonlinear behavior of power HBTs
    IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 7, pp. 1714–1722, 2002
  34. New collector undercut technique using a SiN sidewall for low base contact resistance in InP/InGaAs SHBTs
    IEEE Transactions on Electron Devices, vol. 49, no. 6, pp. 1079–1082, 2002
  35. New predistortion linearizer using low-frequency even-order intermodulation components
    IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 2, pp. 446–452, 2002
  36. A new planar-type GaAs dielectric resonator for mm-wave-band applications
    Microwave and Optical Technology Letters, vol. 35, no. 5, pp. 414–416, 2002
  37. A novel extraction method for the higher order components of channel current in a GaAs MESFET
    Microwave and Optical Technology Letters, vol. 29, no. 2, pp. 114–117, 2001
  38. Accurate RF large-signal model of LDMOSFETs including self-heating effect
    IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 2, pp. 387–390, 2001
  39. Measurement of two-tone transfer characteristics of high-power amplifiers
    IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 3, pp. 568–571, 2001
  40. A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design
    IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 9, pp. 1626–1633, 2001
  41. High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
    Electronics Letters, vol. 37, no. 20, p. 1259, 2001
  42. Analog predistortion linearizer for high-power RF amplifiers
    IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 12, pp. 2709–2713, 2000
  43. A new linear amplifier using low-frequency second-order intermodulation component feedforwarding
    IEEE Microwave and Guided Wave Letters, vol. 9, no. 10, pp. 419–421, 1999
  44. A novel higher order extending method in a MESFET channel current model for Volterra series analysis
    Microwave and Optical Technology Letters, vol. 20, no. 5, pp. 292–295, 1999
  45. Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C–V measurements
    Solid-State Electronics, vol. 42, no. 11, pp. 2113–2116, 1998
  46. Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs
    Electronics Letters, vol. 34, no. 10, p. 1031, 1998
  47. Low-frequency noise characterization of self-aligned AlGaAs-GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz
    IEEE Transactions on Microwave Theory and Techniques, vol. 46, no. 11, pp. 1604–1613, 1998
  48. Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction
    IEEE Electron Device Letters, vol. 18, no. 2, pp. 60–62, 1997
  49. A highly accurate Gummel plot model for thermal design of high-power microwave HBTs
    Microwave and Optical Technology Letters, vol. 16, no. 1, pp. 38–41, 1997
  50. A highly accurate MESFET model to predict the nonlinear behavior of a linear power amplifier
    Microwave and Optical Technology Letters, vol. 13, no. 4, pp. 184–186, 1996
  51. Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
    Solid-State Electronics, vol. 39, no. 4, pp. 541–546, 1996
  52. A GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone
    Electronics Letters, vol. 32, no. 20, p. 1928, 1996
  53. 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
    IEEE Electron Device Letters, vol. 17, no. 2, pp. 65–68, 1996
  54. DC and RF performance of LP-MOCVD grown Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's with Si-delta doped GaAs layer
    IEEE Electron Device Letters, vol. 16, no. 12, pp. 563–565, 1995
  55. Power-gain andfmax equations based on theT equivalent circuit of high-frequency bipolar transistors
    Microwave and Optical Technology Letters, vol. 7, no. 16, pp. 767–769, 1994
  56. A comparative study of the Kirk effect in GaAs and Si bipolar junction transistors
    Solid-State Electronics, vol. 37, no. 8, pp. 1485–1490, 1994
  57. The effect of parasitic components of GaAs FETs on high-frequency gain
    Microwave and Optical Technology Letters, vol. 6, no. 2, pp. 98–101, 1993
  58. Determination of the permittivity and permeability of microwave resonators using two resonant modes
    Microwave and Optical Technology Letters, vol. 5, no. 7, pp. 313–315, 1992
  59. Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100) substrates
    Microwave and Optical Technology Letters, vol. 2, no. 5, pp. 153–155, 1989
  60. Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET
    IEEE Transactions on Electron Devices, vol. 36, no. 10, pp. 2236–2242, 1989
  61. 35 GHz GaAs power MESFETs and monolithic amplifiers
    IEEE Transactions on Microwave Theory and Techniques, vol. 37, no. 9, pp. 1327–1333, 1989
  62. Q-band GaAs MESFET ocillator with 30% efficiency
    Electronics Letters, vol. 24, no. 2, p. 83, 1988
  63. Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel
    IEEE Electron Device Letters, vol. 9, no. 5, pp. 203–204, 1988
  64. High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
    IEEE Electron Device Letters, vol. 9, no. 11, pp. 604–606, 1988
  65. AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies
    IEEE Electron Device Letters, vol. 9, no. 11, pp. 610–612, 1988
  66. GaAs power MESFET with 41-percent power-added efficiency at 35 GHz
    IEEE Electron Device Letters, vol. 9, no. 2, pp. 57–58, 1988
  67. High-performance GaAs power MESFET with AlGaAs buffer layer
    Electronics Letters, vol. 23, no. 19, p. 1008, 1987
  68. High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy
    Electronics Letters, vol. 23, no. 21, p. 1141, 1987
  69. 110 GHz GaAs FET oscillator
    Electronics Letters, vol. 21, no. 5, p. 178, 1985
  70. AlGaAs/GaAs Heterojunction bipolar power transistors
    Electronics Letters, vol. 21, no. 7, p. 258, 1985
  71. 0.5 W 2–21 GHz monolithic GaAs distributed amplifier
    Electronics Letters, vol. 20, no. 7, p. 288, 1984
  72. High-efficiency Q-band GaAs FET oscillator
    Electronics Letters, vol. 20, no. 7, p. 297, 1984
  73. GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs
    Electronics Letters, vol. 19, no. 5, p. 162, 1983
  74. Equivalent-circuit consideration of dual-gate MESFETs at high frequency
    Electronics Letters, vol. 19, no. 17, p. 705, 1983