Mohamed Henini

University of Nottingham, United Kingdom

Mohamed Henini obtained his first degree at the University of Oran, Algeria. This was followed by a period of work as a Production Engineer for an electronic company (SONELEC) in Sidi Bel Abbes, Algeria. He came to the Nottingham University and was awarded the Ph.D. degree for research in deep-level transient spectroscopy (DLTS) in 1984. He remained in the Electrical and Electronic Engineering Department as a Research Fellow in the area of transmission line modeling (TLM). In September 1986, he transferred to the Physics Department where he is now a Professor of applied physics. He has over 20 years of experience in molecular beam epitaxy (MBE) growth. His particular speciality is the physics and technology of MBE growth for III-V electronic and optoelectronic devices. Over the years, he has made contributions to various aspects of III-V materials and devices for photonic and high-speed electronic applications. He has been acknowledged as responsible for several “world firsts” in MBE growth. During the last few years, he has achieved a further significant breakthrough producing new state-of-the-art materials containing quantum dots (QDs). He was ranked the 1st (UK) and the 14th (internationally) out of Top 25 Authors on QDs for the period 1992–2002 (ISI Essential Science Indicators; http://www.esi-topics.com/). He has authored and coauthored over 750 papers in international journals and conference proceedings. He is the Founder of two international conferences, namely, Low Dimensional Structures and Devices (LDSD) and Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). He edited four books which were published by Elsevier and serves on the Editorial Board of several scientific journals.

Biography Updated on 31 July 2011

Scholarly Contributions [Data Provided by scopus]

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