Alexei Koudymov

Rensselaer Polytechnic Institute, USA

Alexei Koudymov was born in 1974 in St.-Petersburg, Russia. He graduated with an M.S. degree in solid state physics from St.-Petersburg State Technical University, Russia, in 1997. From 1993 to 2000, Koudymov was associated as a Research Associate with the Laboratory of Physical Plasticity of Ioffe Physico-Technical Institute, Russian Academy of Science, Russian Federation. In 2000, he joined the Photonics and Microelectronics Laboratory of the University of South Carolina, where in 2003 he completed the Ph.D. program in electrical engineering. His Ph.D. work was acknowledged with the Best Dissertation Award of the University of South Carolina for the years 2002–2004. In 2006, Dr. Koudymov joined the Rensselaer Polytechnic Institute, NY, USA. He specializes in wide band gap electronics and optoelectronics. His areas of interest include ultra-high-frequency FETs, power FETs, UV and visible LEDs, and circuits in GaN and SiC material systems. Dr. Koudymov published over 50 peer-reviewed papers and 10 patent applications and contributed to uncountable number of conference presentations. Dr. Koudymov proudly holds a number of appreciation diplomas as a contributor to the organization and the Chair of several scientific forums, such as Lester Eastman Conference and Workshop on Frontiers in Electronics. Since 2009, Dr. Koudymov combines his academic affiliation with CTO position in Cardona International of NY and Project Manager position at Lumionics of Delaware.

Biography Updated on 15 April 2010

Scholarly Contributions [Data Provided by scopus]