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Articles in Scholarly Journals [Incomplete List]

1. Capacitance characterization of multipath interconnects for nanotechnology circuits
   Microwave and Optical Technology Letters, vol. 48, no. 5, pp. 848–852, 2006
2. High-temperature and self-heating effects in fully depleted SOI MOSFETs
   Microelectronics Journal, vol. 37, no. 9, pp. 963–975, 2006
3. Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET
   Microwave and Optical Technology Letters, vol. 37, no. 5, pp. 366–370, 2003
4. Modeling of very high-frequency effects in the interconnection delays on GaAs-based VLSICs
   Microwave and Optical Technology Letters, vol. 31, no. 3, pp. 229–233, 2001
5. Modeling of transverse propagation delays in a GaAs MESFET
   Microwave and Optical Technology Letters, vol. 14, no. 5, pp. 297–301, 1997
6. Propagation delays in GaAs MESFETs?model validation
   Microwave and Optical Technology Letters, vol. 16, no. 2, pp. 63–66, 1997
7. Multistrategy adaptive path planning
   IEEE Expert, vol. 9, no. 6, pp. 57–65, 1994
8. Modelling of propagation delays in the bilevel crossing interconnections on the GaAs-based integrated circuits
   IEE Proceedings - Circuits, Devices and Systems, vol. 141, no. 3, p. 185, 1994
9. Modeling of transverse propagation delays in the GaAs/AlGaAs modulation doped heterojunction field effect transistors
   IEEE Transactions on Microwave Theory and Techniques, vol. 41, no. 6, pp. 1230–1232, 1993
10. Learning in parallel distributed processing networks: Computational complexity and information content
    IEEE Transactions on Systems, Man, and Cybernetics, vol. 21, no. 2, pp. 359–367, 1991
11. Microcomputer simulation of semiconductor junction characteristics
    Mathematical and Computer Modelling, vol. 14, no. 5-6, pp. 344–348, 1990
12. Modelling of parasitic interconnection inductances on the GaAs-based VLSIC's
    Mathematical and Computer Modelling, vol. 14, no. 5-6, pp. 349–353, 1990
13. PCSIGV: a student-oriented program for calculating the parasitic capacitances for single-level interconnections on GaAs-based VLSI
    IEEE Transactions on Education, vol. 32, no. 3, pp. 381–386, 1989
14. Efficient calculation of interconnection delays on GaAs-based VHSIC
    Electronics Letters, vol. 24, no. 4, p. 209, 1988
15. Electrode parasitic capacitances in self-aligned and deep-recessed GaAs MESFETs
    Solid-State Electronics, vol. 31, no. 10, pp. 1471–1476, 1988
16. Modeling of the transverse delays in GaAs MESFETs
    IEEE Transactions on Microwave Theory and Techniques, vol. 36, no. 10, pp. 1411–1417, 1988
17. Dependence of interconnection delays on driving mechanism for GaAs-based VLSI
    Electronics Letters, vol. 23, no. 20, p. 1066, 1987
18. Cyclic voltammetry on RuO2 (100), (101), (001) and (110) “as-grown” single-crystal surfaces
    Journal of Electroanalytical Chemistry, vol. 151, no. 1-2, pp. 295–303, 1983
19. Optical properties of single-crystal rutile RuO2 and IrO2 in the range 0.5 to 9.5 eV
    Physical Review B, vol. 24, no. 12, pp. 7342–7350, 1981
20. Polarization dependent reflectivity and optical constants of single crystal rutile RuO2 in the range 0.5 to 9.5 eV
    Solid State Communications, vol. 39, no. 2, pp. 245–248, 1981