Hans-Joachim Schulze

Infineon Technologies AG, Germany 0000-0001-5579-0204

Hans-Joachim Schulze was born in Bad Kissingen, Germany, in 1955. He received the diploma in physics from the University of Wü rzburg, Würzburg, Germany, in 1981, and the Ph.D. degree from the Institute of Solid-State Physics, University of Wü rzburg, in 1984. His main research interests have been in the field of superconductivity, self-heating effects, and the growth of thin metallic films. In 1985, he worked with the Corporate Research and Technology, Siemens AG, Munich, Germany, on the development of high-power devices like light-triggered thyristors, GTOs, and diodes. Since 2000, he has been with Infineon Technologies AG, Munich, Germany, where he currently works on the development of new technologies for IGBTs, diodes, and power MOSFETs. He published more than 200 papers and holds more than 190 patents. He serves as a Member of the Deutsche Physikalische Gesellschaft and the Electrochemical Society.

Biography Updated on 29 January 2012

Scholarly Contributions [Data Provided by scopus]

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