Jeffrey T. Glass
Duke University, USA

Jeffrey T. Glass is a Professor in the Department of Electrical and Computer Engineering, in the Pratt School of Engineering at Duke University. He is also the Director of the Engineering Management Program at Duke and holds the Hogg Family endowed chair in Engineering Management and Entrepreneurship. Jeff’s research has focused on the growth and characterization of thin films and development of sensors with a focus on carbon-based materials, including carbon nanotubes, diamond, diamond-like carbon, and silicon carbide. Jeff has published over 130 papers and book chapters, edited six books and is a coinventor on 11 patents. He is an ISI Highly Cited researcher. He has been a short course instructor for several professional societies and companies and he has organized numerous conferences. He has given over 50 invited presentations in 12 different countries. He served as a member of a Presidential Science Advisor’s committee for the assessment of diamond technology in Japan and has received two teaching awards and the National Science Foundation Presidential Young Investigator Award. Jeff received his B.S. and M.S. degrees from Johns Hopkins University, and a Ph.D. degree in materials science and engineering from the University of Virginia. He has been an Advisory Board Member for new ventures, consulted for venture capital firms and fortune 500 companies, and testified as an expert witness in patent litigation. He holds adjunct appointments at Case Western Reserve University and the Kenan Flagler Business School at the University of North Carolina where he teaches executive courses on Managing Innovation. His paper entitled, “Managing the Ties Between Central R&D and Business Units,” received the 2004 Industrial Research Institute’s Maurice Holland Award given to the best paper published in Research-Technology Management in 2003.

Biography Updated on 30 December 2007

Articles in Scholarly Journals [Incomplete List]

  1. On-chip electron-impact ion source using carbon nanotube field emitters
    Applied Physics Letters, vol. 90, no. 12, p. 124102, 2007
  2. Effects of applied substrate bias during reactive sputter deposition of nanocomposite tantalum carbide/amorphous hydrocarbon thin films
    Thin Solid Films, vol. 515, no. 13, pp. 5403–5410, 2007
  3. Mechanical property development in reactively sputtered tantalum carbide/amorphous hydrocarbon thin films
    Journal of Materials Research, vol. 21, no. 6, pp. 1500–1511, 2006
  4. Influence of deposition parameters on the composition and structure of reactively sputtered nanocomposite TaC/a-C:H thin films
    Journal of Materials Research, vol. 20, no. 9, pp. 2583–2596, 2005
  5. The formation of epitaxial hexagonal boron nitride on nickel substrates
    Journal of Electronic Materials, vol. 34, no. 12, pp. 1558–1564, 2005
  6. Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films
    Applied Physics Letters, vol. 87, no. 26, p. 261907, 2005
  7. Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen
    Journal of Applied Physics, vol. 96, no. 1, p. 273, 2004
  8. The effects of structure, composition, and chemical bonding on the mechanical properties of Si-aC:H thin films
    Surface and Coatings Technology, vol. 157, no. 2-3, pp. 197–206, 2002
  9. Preface to the Proceedings of the 7th European Conference on Diamond, Diamond-Like and Related Materials (Diamond Films '96), Tours, France, September 8–13, 1996
    Diamond and Related Materials, vol. 6, no. 2-4, p. xi, 1997
  10. Field emission characteristics of diamond coated silicon field emitters
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 2, p. 422, 1995
  11. Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth
    Surface Science, vol. 334, no. 1-3, pp. 179–194, 1995
  12. Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25–30, 1994
    Diamond and Related Materials, vol. 4, no. 4, p. xv, 1995
  13. Preface to the proceedings of the 4th European conference on diamond, diamond-like and related materials (diamond films '93), Albufeira, Portugal, September 20–24, 1993
    Diamond and Related Materials, vol. 3, no. 4-6, pp. xv–xv, 1994
  14. The effect of substrate material on bias-enhanced diamond nucleation
    Diamond and Related Materials, vol. 3, no. 9, pp. 1188–1195, 1994
  15. Effect of native SiO2 layer on the nucleation of diamond using a combustion flame
    Diamond and Related Materials, vol. 3, no. 3, pp. 239–244, 1994
  16. The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films
    Journal of Applied Physics, vol. 76, no. 5, p. 3020, 1994
  17. Fabrication of diamond thin-film thermistors for high-temperature applications
    Diamond and Related Materials, vol. 2, no. 5-7, pp. 816–819, 1993
  18. Titanium carbide rectifying contacts on boron-doped polycrystalline diamond
    Diamond and Related Materials, vol. 2, no. 1, pp. 37–40, 1993
  19. Geometric modeling of the diamond-ß-SiC heteroepitaxial interface
    Diamond and Related Materials, vol. 2, no. 2-4, pp. 590–596, 1993
  20. Epitaxial nucleation of diamond on ß-SiC via bias-enhanced microwave plasma chemical vapor deposition
    Diamond and Related Materials, vol. 2, no. 2-4, pp. 142–146, 1993
  21. Diamond and β-SiC heteroepitaxial interfaces: A theoretical and experimental study
    Physical Review B, vol. 47, no. 11, pp. 6529–6542, 1993
  22. Combustion growth of large diamond crystals
    Journal of Crystal Growth, vol. 129, no. 1-2, pp. 45–55, 1993
  23. Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch
    Diamond and Related Materials, vol. 2, no. 2-4, pp. 438–442, 1993
  24. A review of the electrical characteristics of metal contacts on diamond
    Thin Solid Films, vol. 212, no. 1-2, pp. 19–24, 1992
  25. Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy
    Physical Review B, vol. 45, no. 19, pp. 11067–11084, 1992
  26. Textured diamond growth on (100) ß-SiC via microwave plasma chemical vapor deposition
    Applied Physics Letters, vol. 60, no. 6, p. 698, 1992
  27. Microfabrication of diamond films: selective deposition and etching
    Surface and Coatings Technology, vol. 47, no. 1-3, pp. 465–473, 1991
  28. Growth and characterization of diamond films on nondiamond substrates for electronic applications
    Proceedings of the IEEE, vol. 79, no. 5, pp. 621–646, 1991
  29. Determination of impurity dopant distributions in diamond films by SIMS
    Carbon, vol. 28, no. 6, p. 801, 1990
  30. Properties and applications of vapor grown diamond
    Carbon, vol. 28, no. 6, pp. 756–757, 1990
  31. Electron Microscopy of Defects in Epitaxical beta-SiC Thin Films Grown on Silicon and Carbon {0001} Faces of alpha-SiC Substrates
    Journal of the American Ceramic Society, vol. 73, no. 5, pp. 1283–1288, 1990
  32. Effect of Substrate Orientation on Interfacial and Bulk Character of Chemically Vapor Deposited Monocrystalline Silicon Carbide Thin Films
    Journal of the American Ceramic Society, vol. 73, no. 5, pp. 1289–1296, 1990
  33. Electrical Contacts to Beta Silicon Carbide Thin Films
    Journal of The Electrochemical Society, vol. 135, no. 2, p. 359, 1988
  34. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
    Materials Science and Engineering B, vol. 1, no. 1, pp. 77–104, 1988
  35. Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type ß-SiC grown via chemical vapor deposition
    Applied Physics Letters, vol. 51, no. 6, p. 442, 1987