Articles in Scholarly Journals [Incomplete List]

1. Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (NH[sub 4])[sub 2]S[sub x] treatment
   Journal of Applied Physics, vol. 101, no. 11, p. 113713, 2007
2. Comment on “Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts” [Appl. Phys. Lett. 89, 033503 (2006)]
   Applied Physics Letters, vol. 90, no. 4, p. 046101, 2007
3. Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
   Japanese Journal of Applied Physics, vol. 45, no. No. 1A, pp. 64–66, 2006
4. InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer
   Japanese Journal of Applied Physics, vol. 45, no. No. 8A, pp. 6271–6274, 2006
5. Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature
   Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 694, 2006
6. The Preparation of Piezoelectric ZnO Films by RF Magnetron Sputtering for Layered Surface Acoustic Wave Device Applications
   Japanese Journal of Applied Physics, vol. 45, no. No. 4B, pp. 3531–3536, 2006
7. Electrical, Optical and Material Properties of ZnO-Doped Indium-Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature
   Japanese Journal of Applied Physics, vol. 45, no. No. 4B, pp. 3526–3530, 2006
8. A Transparent and Conductive Film Prepared by RF Magnetron Cosputtering System at Room Temperature
   Japanese Journal of Applied Physics, vol. 44, no. No. 7A, pp. 5119–5121, 2005
9. Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer
   Thin Solid Films, vol. 468, no. 1-2, pp. 216–221, 2004
10. Properties of Cu/Au Schottky contacts on InGaP layer
    Journal of Applied Physics, vol. 94, no. 6, p. 3805, 2003
11. Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer
    Journal of Applied Physics, vol. 92, no. 2, p. 987, 2002
12. Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer
    Journal of Applied Physics, vol. 91, no. 3, p. 1349, 2002
13. Schottky barrier height and surface state density of Ni/Au contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN
    Applied Physics Letters, vol. 79, no. 16, p. 2573, 2001
14. Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs
    Solid-State Electronics, vol. 44, no. 7, pp. 1235–1238, 2000