Articles in Scholarly Journals [Incomplete List]

1. Fabrication of a vertical reflow microlens with silylation technology
   Sensors and Actuators A: Physical, vol. 136, no. 1, pp. 398–402, 2007
2. The influence of InAs coverage on the performances self-assembled InGaAs quantum rings
   Journal of Crystal Growth, vol. 301-302, pp. 841–845, 2007
3. Temperature-insensitive detectivity of 5-pair InAs/GaAs quantum-dot infrared photodetectors with asymmetric device structure
   Journal of Crystal Growth, vol. 301-302, pp. 817–820, 2007
4. Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
   Thin Solid Films, vol. 515, no. 10, pp. 4459–4461, 2007
5. Monte Carlo ray trace simulation for micro-ball-lens-integrated high-speed InGaAs p-i-n photodiodes
   Journal of Applied Physics, vol. 101, no. 3, p. 033107, 2007
6. Influence of thin metal base thickness on the performance of CuPc vertical organic triodes
   Applied Physics Letters, vol. 90, no. 15, p. 153509, 2007
7. 1.3-${\rm \mu}\hbox{m}$ GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation
   IEEE Electron Device Letters, vol. 28, no. 2, pp. 120–122, 2007
8. 10-Gb/s InGaAs p-i-n Photodiodes With Wide Spectral Range and Enhanced Visible Spectral Response
   IEEE Photonics Technology Letters, vol. 19, no. 5, pp. 339–341, 2007
9. Improving the Luminescence of InGaN–GaN Blue LEDs Through Selective Ring-Region Activation of the Mg-Doped GaN Layer
   IEEE Photonics Technology Letters, vol. 19, no. 12, pp. 928–930, 2007
10. Pentacene-Based Planar- and Vertical-Type Organic Thin-Film Transistor
    IEEE Transactions on Electron Devices, vol. 54, no. 7, pp. 1633–1636, 2007
11. Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 1, p. 43, 2007
12. High Performance 1.55 μm InGaAsP Buried-Heterostructure Laser Diodes Fabricated by Single-Step MOCVD Regrowth and Self-Aligned Technique
    Journal of The Electrochemical Society, vol. 154, no. 4, p. H263, 2007
13. High-Temperature and High-Frequency Operation of 1.3 µm AlGaInAs/InP Laser Diodes Using Silicon Oxide Planarization
    Journal of The Electrochemical Society, vol. 154, no. 5, p. H380, 2007
14. Temperature Dependent Photoluminescence of Self-Organized InAs Quantum Dots on an InGaAs Strain Buffer Layer Grown by MOCVD
    Electrochemical and Solid-State Letters, vol. 10, no. 6, p. H181, 2007
15. Linear GRINSCH 1.55-µm InGaAsP/InP Strained Multiple Quantum Well Laser Diodes Grown by Substrate Temperature Control
    Journal of The Electrochemical Society, vol. 153, no. 4, p. G309, 2006
16. Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 µm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 2, p. 623, 2006
17. On Application of Analytical Model for Drain-Coupling Split-Gate Flash: Analytical Solution to Source-Side Injection Multilevel Programming
    Japanese Journal of Applied Physics, vol. 45, no. No. 3, pp. L77–L79, 2006
18. 1.32 µm InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 4, p. 1922, 2006
19. Fabrication of a polymeric vertical microlens with the dip method
    Applied Optics, vol. 45, no. 32, p. 8273, 2006
20. Alignment tolerance enlargement of a high-speed photodiode by a self-positioned microball lens
    IEEE Photonics Technology Letters, vol. 18, no. 1, pp. 112–114, 2006
21. Low-Cost and High-Performance 1.3-$mu$m AlGaInAs–InP Uncooled Laser Diodes
    IEEE Photonics Technology Letters, vol. 18, no. 12, pp. 1380–1382, 2006
22. All-organic hot-carrier triodes with thin-film metal base
    Applied Physics Letters, vol. 89, no. 18, p. 183508, 2006
23. Influence of doping density on the normal incident absorption of quantum-dot infrared photodetectors
    Applied Physics Letters, vol. 88, no. 17, p. 173511, 2006
24. High-Speed and Uncooled Operation of 1.3-$muhboxm$InGaAsP Strain-Compensated MQW BH Lasers Fabricated on Patterned InP Substrates
    Journal of Lightwave Technology, vol. 24, no. 7, pp. 2906–2911, 2006
25. Vertical organic triodes with a high current gain operated in saturation region
    Applied Physics Letters, vol. 89, no. 18, p. 183511, 2006
26. Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique
    Solid-State Electronics, vol. 50, no. 2, pp. 142–148, 2006
27. Device simulation for GaAs/AlGaAs superlattice infrared photodetector with a single current blocking layer
    Journal of Applied Physics, vol. 97, no. 6, p. 064910, 2005
28. A Simple and Low-Cost Fabrication of Polymeric Vertical Microlens Using Dip Method
    IEEE Photonics Technology Letters, vol. 17, no. 3, pp. 603–605, 2005
29. High-performance 30-period quantum-dot infrared photodetector
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 3, p. 1129, 2005
30. Quantum-Dot Infrared Photodetectors With p-Type-Doped GaAs Barrier Layers
    IEEE Photonics Technology Letters, vol. 17, no. 11, pp. 2409–2411, 2005
31. Silicon Oxide-Planarized Single-Mode 850-nm VCSELs With TO Package for 10 Gb/s Data Transmission
    IEEE Electron Device Letters, vol. 26, no. 5, pp. 304–307, 2005
32. Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 4, p. 1428, 2005
33. Temperature dependence of carrier dynamics for InAs/GaAs quantum dot infrared photodetectors
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 5, p. 1909, 2005
34. An Analytical Programming Model for the Drain-Coupling Source-Side Injection Split Gate Flash EEPROM
    IEEE Transactions on Electron Devices, vol. 52, no. 3, pp. 385–391, 2005
35. Self-terminated oxide polish technique for the waveguide ridge laser diode fabrication
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 3, p. 1060, 2005
36. High-Performance SiO<tex>$_ x$</tex>Planarized GaInNAs VCSELs
    IEEE Transactions on Electron Devices, vol. 52, no. 5, pp. 1033–1036, 2005
37. Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 5, p. 2518, 2004
38. Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions
    Japanese Journal of Applied Physics, vol. 43, no. No. 1, pp. 54–60, 2004
39. Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 4, p. 1970, 2004
40. Relatively large electric-field induced electron drift velocity observed in an InxGa1 xAs-based p–i–n semiconductor nanostructure
    Semiconductor Science and Technology, vol. 19, no. 4, pp. S23–S24, 2004
41. Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 3, p. 961, 2004
42. Edge-Coupled InGaAs PIN Photodiode With a Light Funnel Waveguide
    IEEE Journal of Quantum Electronics, vol. 40, no. 11, pp. 1607–1613, 2004
43. High Reliability of AlGaInP Light-Emitting Diodes With Tensile Strain Barrier-Reducing Layer
    IEEE Photonics Technology Letters, vol. 16, no. 1, pp. 30–32, 2004
44. 1.3 µm compressive-strain GaInAsP/GaInAsP multiple-quantum-well laser diodes with a tensile-strain GaInP electron stopper layer
    Solid-State Electronics, vol. 48, no. 9, pp. 1651–1654, 2004
45. 1.3µm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
    Journal of Crystal Growth, vol. 264, no. 1-3, pp. 128–133, 2004
46. Large electric-field induced electron drift velocity observed in an In[sub x]Ga[sub 1-x]As-based p–i–n semiconductor nanostructure at T=300 K
    Applied Physics Letters, vol. 83, no. 7, p. 1438, 2003
47. Investigation of epitaxial lift-off the InGaAs p–i–n photodiodes to the AlAs/GaAs distributed Bragg reflectors
    Solid-State Electronics, vol. 47, no. 10, pp. 1763–1767, 2003
48. Improved 634 nm MWQ AlGaInP LEDs performance with novel tensile strain barrier reducing layer
    IEEE Transactions on Electron Devices, vol. 50, no. 12, pp. 2388–2392, 2003
49. AlGaInP light-emitting diode with tensile strain barrier reducing layer
    IEEE Electron Device Letters, vol. 24, no. 3, pp. 159–161, 2003
50. Fabrication of InGaP/Al/sub 0-98/Ga/sub 0-02/GaAs oxide-confined collector-up heterojunction bipolar transistors
    IEEE Electron Device Letters, vol. 24, no. 10, pp. 619–621, 2003
51. Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures
    Applied Physics Letters, vol. 82, no. 12, p. 1968, 2003
52. Effect of InGaAsP intermediate layer in 1.3?µm AlGaInAs strain-compensated multiple quantum well laser diodes
    IEE Proceedings - Optoelectronics, vol. 150, no. 6, p. 541, 2003
53. Oxide Confined Collector-Up Heterojunction Bipolar Transistors
    Japanese Journal of Applied Physics, vol. 42, no. Part 1, No. 5A, pp. 2612–2614, 2003
54. Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
    Japanese Journal of Applied Physics, vol. 42, no. Part 2, No. 12B, pp. L1507–L1508, 2003
55. Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
    Japanese Journal of Applied Physics, vol. 42, no. Part 2, No. 4B, pp. L417–L418, 2003
56. Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
    Japanese Journal of Applied Physics, vol. 42, no. Part 1, No. 2A, pp. 409–413, 2003
57. Very Low Threshold Current Operation of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
    Japanese Journal of Applied Physics, vol. 42, no. Part 2, No. 6B, pp. L643–L645, 2003
58. 1.3 µm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, p. 1013, 2002
59. 1.3-µm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    IEEE Transactions on Electron Devices, vol. 49, no. 7, pp. 1129–1135, 2002
60. The influence of InGaP barrier layer on the characteristics of 1.3 µm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes
    Solid-State Electronics, vol. 46, no. 9, pp. 1389–1394, 2002
61. The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs
    Solid-State Electronics, vol. 46, no. 11, pp. 1945–1948, 2002
62. High-power and low-threshold-current operation of 1.3 µm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes
    Solid-State Electronics, vol. 46, no. 12, pp. 2041–2044, 2002
63. A new process to improve the performance of 850 nm wavelength GaAs VCSELs
    Solid-State Electronics, vol. 46, no. 12, pp. 2287–2289, 2002
64. Improvement of diodes performance with a multiple-pair buffer layer by MOCVD
    Materials Science and Engineering B, vol. 82, no. 1-3, pp. 253–255, 2001
65. Electrical characterization of SiO/sub x/ and SiN/sub x/ prepared by PECVD technique on In/sub 0.53/Ga/sub 0.47/As
    IEEE Transactions on Dielectrics and Electrical Insulation, vol. 8, no. 6, pp. 1011–1015, 2001
66. Edge-coupled InGaAs p-i-n photodiode with the pseudowindow defined by an etching process
    IEEE Journal of Quantum Electronics, vol. 37, no. 11, pp. 1409–1411, 2001
67. Effectiveness of the pseudowindow for edge-coupled InP-InGaAs-InP PIN photodiodes
    IEEE Journal of Quantum Electronics, vol. 36, no. 3, pp. 333–339, 2000
68. Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy
    Journal of Applied Physics, vol. 87, no. 9, p. 4240, 2000
69. Edge-coupled InGaAs P-I-N photodiode with a pseudowindow
    IEEE Transactions on Electron Devices, vol. 47, no. 11, pp. 2088–2092, 2000
70. Highly uniform operation of high-performance 1.3-µm AlGaInAs-InP monolithic laser arrays
    IEEE Journal of Quantum Electronics, vol. 36, no. 5, pp. 590–597, 2000
71. Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition
    Journal of Crystal Growth, vol. 208, no. 1-4, pp. 137–144, 2000
72. Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer
    Solid-State Electronics, vol. 44, no. 8, pp. 1483–1486, 2000
73. Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition
    Electronics Letters, vol. 36, no. 12, p. 1026, 2000
74. X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method
    Journal of Crystal Growth, vol. 206, no. 1-2, pp. 8–14, 1999
75. The influence of window layers on the performance of 650nm AlGaInP/GaInP multi-quantum-well light-emitting diodes
    Journal of Crystal Growth, vol. 200, no. 3-4, pp. 382–390, 1999
76. Growth and characterization of GaN by atomsphere pressure metalorganic chemical-vapor deposition with a novel separate-flow reactor
    Journal of Crystal Growth, vol. 200, no. 1-2, pp. 39–44, 1999
77. The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing
    Journal of Crystal Growth, vol. 200, no. 1-2, pp. 32–38, 1999
78. Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD
    Journal of Electronic Materials, vol. 28, no. 10, pp. 1096–1100, 1999
79. MOCVD growth of strained multiple quantum well structure for 1.3 µm InAsP/InP laser diodes
    Solid-State Electronics, vol. 43, no. 12, pp. 2141–2146, 1999
80. Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode
    Applied Physics Letters, vol. 74, no. 26, p. 4008, 1999
81. GaAs MESFET with low current capability grafted onto quartz substrate
    IEE Proceedings - Circuits, Devices and Systems, vol. 146, no. 3, p. 135, 1999
82. Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy
    Materials Science and Engineering B, vol. 68, no. 1, pp. 22–25, 1999
83. Effectiveness of metallic mirror for promoting the photoresponse of InGaAs PIN photodiode
    Solid-State Electronics, vol. 43, no. 5, pp. 961–967, 1999
84. Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition
    Journal of Applied Physics, vol. 85, no. 12, p. 8427, 1999
85. Improvement of GaN layer quality by using the bulk-GaN buffer structure grown by metalorganic chemical vapor deposition
    Journal of Applied Physics, vol. 86, no. 11, p. 6120, 1999
86. Electrical and structural properties of Re/GaAs Schottky diodes
    Journal of Applied Physics, vol. 85, no. 7, p. 3893, 1999
87. Fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors
    Solid-State Electronics, vol. 43, no. 3, pp. 659–663, 1999
88. Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes
    Solid-State Electronics, vol. 43, no. 4, pp. 809–814, 1999
89. Bandwidth enhancement for p-end-illuminated InP/InGaAs/InP p-i-n photodiodes by utilizing symmetrical doping profiles
    Journal of Lightwave Technology, vol. 17, no. 5, pp. 912–917, 1999
90. Comparison of InGaAs pin photodiodes with Ti/Pt/Au and Au reflectors
    Electronics Letters, vol. 35, no. 20, p. 1767, 1999
91. High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 µm
    IEEE Transactions on Electron Devices, vol. 46, no. 8, pp. 1614–1618, 1999
92. Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 6, p. 2530, 1999
93. Low crosstalk and highly reliable 12 element 1.3 [micro sign]m AlGaInAs/InP laser arrays
    Electronics Letters, vol. 34, no. 8, p. 776, 1998
94. Low threshold current and high temperature operation of 1.55 [micro sign]m strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes
    Electronics Letters, vol. 34, no. 17, p. 1667, 1998
95. Highly uniform characteristics 12-element 1.5 [micro sign]m strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature
    Electronics Letters, vol. 34, no. 2, p. 186, 1998
96. Surface-related optical anisotropy of GaInP, InP, and GaP
    Journal of Crystal Growth, vol. 174, no. 1-4, pp. 558–563, 1997
97. High-quality Ga1-xInxAsySb1-y quaternary layers grown from antimonide-rich solutions by liquid-phase epitaxy
    Journal of Crystal Growth, vol. 172, no. 3-4, pp. 514–520, 1997
98. Uniform and high performance of monolithically integrated 1×12 array of planar GaInAs photodiodes
    IEEE Transactions on Electron Devices, vol. 44, no. 4, pp. 559–564, 1997
99. Highly uniform monolithic 1 × 12 array of InGaAs photodiodes
    Electronics Letters, vol. 32, no. 1, p. 61, 1996
100. Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium
     Journal of Crystal Growth, vol. 158, no. 4, pp. 449–454, 1996
101. Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy
     Journal of Applied Physics, vol. 80, no. 3, p. 1731, 1996
102. High responsivity GaInAs PIN photodiode by using erbium gettering
     IEEE Transactions on Electron Devices, vol. 42, no. 4, pp. 639–645, 1995
103. High reliability of AlGaInP LED's with efficient transparent contacts for spatially uniform light emission
     IEEE Electron Device Letters, vol. 16, no. 11, pp. 482–484, 1995
104. InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz
     Solid-State Electronics, vol. 38, no. 7, pp. 1295–1298, 1995
105. AlGaInP orange light-emitting diodes grown on misoriented p-GaAs substrates
     Solid-State Electronics, vol. 38, no. 2, pp. 305–308, 1995
106. X-ray photoelectron spectroscopy and optoelectrical properties of low-concentration erbium-doped GaSb layers grown from Sb-rich solutions by liquid-phase epitaxy
     Journal of Applied Physics, vol. 78, no. 11, p. 6691, 1995
107. InGaAs pin photodiodes grown by liquid-phase epitaxy using erbium gettering
     Electronics Letters, vol. 30, no. 1, p. 83, 1994
108. High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multiple quantum well laser diodes emitting at 676 nm
     Electronics Letters, vol. 30, no. 6, p. 494, 1994
109. AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy
     Journal of Crystal Growth, vol. 137, no. 3-4, pp. 400–404, 1994
110. Growth of a GaP window layer on AlGaInP light-emitting diodes using misoriented substrates
     Journal of Crystal Growth, vol. 142, no. 1-2, pp. 15–20, 1994
111. Investigation of Er-doped 1.55µm InGaAsP single-heterostructure light-emitting diodes
     Journal of Crystal Growth, vol. 139, no. 3-4, pp. 251–258, 1994
112. Luminescence Characterization of In[sub 0.12]Ga[sub 0.88]As[sub 0.34]P[sub 0.66] Grown on GaAs[sub 0.61]P[sub 0.39] Substrates by Liquid-Phase Epitaxy
     Journal of The Electrochemical Society, vol. 141, no. 8, p. 2211, 1994
113. Growth and Photoluminescence Study of Low Concentration InP Layers Grown by Liquid-Phase Epitaxy in the Presence of Erbium
     Journal of The Electrochemical Society, vol. 140, no. 10, p. 3030, 1993
114. Growth and Characterization of In0.83Ga0.17As0.39P0.61 Layers by Liquid-Phase Epitaxy Using Erbium Gettering
     Japanese Journal of Applied Physics, vol. 32, no. Part 1, No. 6A, pp. 2587–2591, 1993
115. Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
     Japanese Journal of Applied Physics, vol. 32, no. Part 1, No. 6A, pp. 2725–2730, 1993
116. Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1-x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7 and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate
     Japanese Journal of Applied Physics, vol. 32, no. Part 1, No. 10, pp. 4460–4466, 1993
117. Photoluminescence of undoped and Er-doped 1.1-µm InGaAsP layers grown by liquid-phase epitaxy
     Solid-State Electronics, vol. 36, no. 8, pp. 1101–1106, 1993
118. (Al0.5Ga0.5)0.65In0.35P/Ga0.65In0.35P double-heterostructure orange light-emitting diodes
     Electronics Letters, vol. 29, no. 15, p. 1346, 1993
119. Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy
     Solid-State Electronics, vol. 35, no. 4, pp. 523–528, 1992
120. Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy
     Journal of Electronic Materials, vol. 21, no. 10, pp. 977–981, 1992
121. Luminescence of N-Implanted In0.32Ga0.68P Grown by Liquid-Phase Epitaxy
     Japanese Journal of Applied Physics, vol. 31, no. Part 1, No. 9A, pp. 2660–2664, 1992
122. Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy
     Japanese Journal of Applied Physics, vol. 31, no. Part 1, No. 5A, pp. 1249–1254, 1992
123. Growth by Liquid-Phase Epitaxy and Characterization of Al0.28Ga0.72As0.62P0.38
     Japanese Journal of Applied Physics, vol. 31, no. Part 1, No. 8, pp. 2514–2518, 1992
124. Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er
     Japanese Journal of Applied Physics, vol. 30, no. Part 1, No. 11A, pp. 2679–2682, 1991
125. Heterointerface study of perturbed LPE growth of AlGaAs/InGaP single heterostructure
     Journal of Crystal Growth, vol. 110, no. 4, pp. 795–802, 1991
126. Liquid-phase epitaxial growth of InGaP for red electroluminescent devices
     Solid-State Electronics, vol. 34, no. 8, pp. 843–851, 1991
127. Interface abruptness and LED performance of the AlGaAs/InGaP single heterostructure grown by liquid-phase epitaxy
     Journal of Crystal Growth, vol. 112, no. 4, pp. 803–807, 1991
128. Liquid-phase epitaxial growth of AlxGa1-xAs with 0?x?0.85
     Journal of Crystal Growth, vol. 96, no. 1, pp. 52–58, 1989