Grigorii A. Kachurin

Russian Academy of Science, Russia

Grigorii A. Kachurin was born in Khabarovsk, Russia in 1940. He received the Electrical Engineering degree from the Moscow Energy Institute (Moscow, Russia) in 1963 and the Ph.D. degree from the Institute of Semiconductor Physics (Novosibirsk, Russia) in 1968, where he has worked since 1963. Kachurin has obtained the D.S. degree in physics and mathematics in 1982. He is the coauthor of three monographs and more than 100 articles and numerous conference papers on the radiation physics of semiconductors. Presently, he is mainly interested in ion implantation, pulse annealing, nanotechnology, Si nanocrystals, swift heavy ions, and quantum-size effects. In 1988, he was the corecipient of the USSR State Award and the Golden Medal for the discovery and development of the laser annealing effect. Kachurin was the supervisor of undergraduate and postgraduate students. He was appointed as the Chairman of the Graduation Committee at the Novosibirsk State Technical University, and he is a Member of the Council for Conferment of the Doctor of Sciences Degrees. He is a Member of the Editorial Board of the Global Journal of Physics Express, and he is a Leading Scientist at the Institute of Semiconductor Physics (Novosibirsk, Russia). Kachurin has fulfilled many investigations on the semiconductor physics in collaboration with the foreign colleagues, and these studies were supported by different foundations of Russia, Germany, France, USA, and Israel.

Biography Updated on 20 March 2011

Scholarly Contributions [Data Provided by scopus]

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