S. B. Krupanidhi

Personal Home Page

http://mrc.iisc.ernet.in/Faculty/Regular/SBK/SBK_Profile.htm

Articles in Scholarly Journals [Incomplete List]

  1. Synthesis and structural characterization of the antiferroelectric lead zirconate nanotubes by pulsed laser deposition
    Applied Physics A, vol. 87, no. 1, pp. 27–30, 2007
  2. Dielectric anomaly in Li-doped zinc oxide thin films grown by sol–gel route
    Applied Physics A, 2007
  3. Investigations on zinc oxide thin films grown on Si (100) by thermal oxidation
    Materials Science and Engineering: B, vol. 137, no. 1-3, pp. 126–130, 2007
  4. Dielectric, impedance and ferroelectric characteristics of c-oriented bismuth vanadate films grown by pulsed laser deposition
    Materials Science and Engineering: B, vol. 138, no. 1, pp. 22–30, 2007
  5. Investigations on magnetron sputtered ZnO thin films and Au/ZnO Schottky diodes
    Physica B: Condensed Matter, vol. 391, no. 2, pp. 344–349, 2007
  6. Synthesis and structural characterization of Ba0.6Sr0.4TiO3 nanotubes
    Physics Letters A, 2007
  7. Leakage current behavior in pulsed laser deposited Ba(Zr[sub 0.05]Ti[sub 0.95])O[sub 3] thin films
    Journal of Applied Physics, vol. 101, no. 3, p. 034106, 2007
  8. Interface dominated biferroic La[sub 0.6]Sr[sub 0.4]MnO[sub 3]/0.7Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]–0.3PbTiO[sub 3] epitaxial superlattices
    Applied Physics Letters, vol. 90, no. 12, p. 122902, 2007
  9. Ferroelectric interaction and polarization studies in BaTiO[sub 3]/SrTiO[sub 3] superlattice
    Journal of Applied Physics, vol. 101, no. 10, p. 104113, 2007
  10. Improved ferroelectric and leakage properties in symmetric BiFeO[sub 3]/SrTiO[sub 3] superlattice
    Applied Physics Letters, vol. 90, no. 21, p. 212902, 2007
  11. Realization of biferroic properties in La[sub 0.6]Sr[sub 0.4]MnO[sub 3]/0.7Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]–0.3(PbTiO[sub 3]) epitaxial superlattices
    Journal of Applied Physics, vol. 101, no. 11, p. 114104, 2007
  12. Low threshold voltage ZnO thin film transistor with a Zn[sub 0.7]Mg[sub 0.3]O gate dielectric for transparent electronics
    Journal of Applied Physics, vol. 101, no. 12, p. 123717, 2007
  13. Nonlinear dielectric behavior in three-component ferroelectric superlattices
    Journal of Applied Physics, vol. 102, no. 2, p. 024108, 2007
  14. Erratum: Interfacial coupling and its size dependence in PbTiO_{3} and PbMg_{1/3}Nb_{2/3}O_{3} multilayers [Phys. Rev. B 74, 184104 (2006)]
    Physical Review B, vol. 75, no. 1, 2007
  15. EFFECT OF MANGANESE DOPING ON THE ELECTRICAL CHARACTERISTICS OF SOL-GEL DERIVED LEAD ZIRCONATE TITANATE THIN FILMS
    Integrated Ferroelectrics, vol. 82, no. 1, pp. 65–80, 2006
  16. Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET
    Journal of Physics D: Applied Physics, vol. 39, no. 13, pp. 2664–2669, 2006
  17. Interfacial coupling and its size dependence in PbTiO_{3} and PbMg_{1/3}Nb_{2/3}O_{3} multilayers
    Physical Review B, vol. 74, no. 18, 2006
  18. Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation
    Journal of Applied Physics, vol. 99, no. 3, p. 034105, 2006
  19. Dielectric properties of (110) oriented PbZrO[sub 3] and La-modified PbZrO[sub 3] thin films grown by sol-gel process on Pt(111)/Ti/SiO[sub 2]/Si substrate
    Journal of Applied Physics, vol. 100, no. 4, p. 044102, 2006
  20. Dielectric properties of c-axis oriented Zn[sub 1-x]Mg[sub x]O thin films grown by multimagnetron sputtering
    Applied Physics Letters, vol. 89, no. 8, p. 082905, 2006
  21. InMnO[sub 3]: A biferroic
    Journal of Applied Physics, vol. 100, no. 7, p. 076104, 2006
  22. Temperature dependent transport properties of CuInSe2–ZnO heterostructure solar Cell
    Journal of Physics and Chemistry of Solids, vol. 67, no. 8, pp. 1636–1642, 2006
  23. C–V studies on metal–ferroelectric bismuth vanadate (Bi2VO5.5)–semiconductor structure
    Solid State Communications, vol. 137, no. 10, pp. 566–569, 2006
  24. Ferroelectricity in Bi26-xMxO40-d (M=Al and Ga) with the ?-Bi2O3 structure
    Solid State Communications, vol. 140, no. 1, pp. 42–44, 2006
  25. Growth and transport properties of CuInSe2/ZnO heterostructure solar cell
    Materials Science and Engineering: B, vol. 127, no. 1, pp. 12–16, 2006
  26. dc and ac transport properties of Mn-doped ZnO thin films grown by pulsed laser ablation
    Materials Science and Engineering: B, vol. 133, no. 1-3, pp. 70–76, 2006
  27. AC properties of laser ablated La-modified lead titanate thin films
    Thin Solid Films, vol. 474, no. 1-2, pp. 1–9, 2005
  28. Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique
    Solid State Communications, vol. 133, no. 9, pp. 611–614, 2005
  29. Guest Editorial
    Ferroelectrics, vol. 323, no. 1, pp. vii–vii, 2005
  30. High Energy Oxygen Ion Induced Modifications in Ferroelectric SrBi 2 Ta 2 O 9 Thin Films
    Ferroelectrics, vol. 328, no. 1, pp. 103–109, 2005
  31. Guest Editorial
    Ferroelectrics, vol. 329, no. 1, pp. vii–vii, 2005
  32. Guest Editorial
    Ferroelectrics, vol. 326, no. 1, pp. vii–vii, 2005
  33. Guest Editorial
    Ferroelectrics, vol. 324, no. 1, pp. vii–vii, 2005
  34. Guest Editorial
    Ferroelectrics, vol. 325, no. 1, pp. vii–vii, 2005
  35. Guest Editorial
    Ferroelectrics, vol. 328, no. 1, pp. vii–vii, 2005
  36. Enhanced tunability and phase transition studies in compositionally varying lead magnesium niobate–lead titanate multilayered thin films
    Applied Physics Letters, vol. 86, no. 9, p. 092902, 2005
  37. Dielectric phase-transition and polarization studies in stepped and compositionally graded lead magnesium niobate–lead titanate relaxor thin films
    Journal of Applied Physics, vol. 98, no. 1, p. 014105, 2005
  38. dc leakage behavior in vanadium-doped bismuth titanate thin films
    Journal of Applied Physics, vol. 98, no. 9, p. 094112, 2005
  39. Deep level transient spectroscopy studies on BaTiO3 and Ba1–xCaxTiO3 thin films deposited on Si substrates
    Semiconductor Science and Technology, vol. 20, no. 2, pp. 250–255, 2005
  40. Biferroic YCrO_{3}
    Physical Review B, vol. 72, no. 22, 2005
  41. Impact of microstructure on electrical characteristics of laser ablation grown ZrTiO4 thin films on Si substrate
    Journal of Physics D: Applied Physics, vol. 38, no. 1, pp. 41–50, 2004
  42. Investigation of Relaxor Behavior in Pb(Mgg1/3Nb2/3)O3-PbTiO3 Thin Films
    Ferroelectrics, vol. 306, no. 1, pp. 17–27, 2004
  43. Impact of microstructure on dielectric properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films
    Materials Science and Engineering B, vol. 106, no. 2, pp. 111–119, 2004
  44. Effect of electric field on dielectric response of PMN?PT thin films
    Materials Science and Engineering B, vol. 113, no. 3, pp. 190–197, 2004
  45. Structural and optical properties of CuIn1-xAlxSe2 thin films prepared by four-source elemental evaporation
    Solid State Communications, vol. 127, no. 3, pp. 243–246, 2003
  46. Study of relaxor-like behaviour of laser ablated (Pb, La)Tio3 thin films
    Solid State Communications, vol. 127, no. 3, pp. 247–251, 2003
  47. Study of La-modified antiferroelectric PbZrO3 thin films
    Thin Solid Films, vol. 423, no. 1, pp. 88–96, 2003
  48. Role of La0.5Sr0.5CoO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O3–PbTiO3 thin films
    Thin Solid Films, vol. 424, no. 2, pp. 274–282, 2003
  49. High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films
    Thin Solid Films, vol. 434, no. 1-2, pp. 40–48, 2003
  50. Dielectric response and impedance spectroscopy of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin films
    Materials Science and Engineering B, vol. 98, no. 3, pp. 204–212, 2003
  51. Ac conductivity studies on the Li irradiated PZT and SBT ferroelectric thin films
    Materials Science and Engineering B, vol. 100, no. 1, pp. 93–101, 2003
  52. Effect of AC&DC Field on the Dielectric Response of (Pb,La)TiO 3 Thin Films
    Integrated Ferroelectrics, vol. 54, no. 1, pp. 665–677, 2003
  53. Growth and Studies of Calcium Doped Laser Ablated Barium Titanate Thin Films
    Integrated Ferroelectrics, vol. 54, no. 1, pp. 747–754, 2003
  54. Growth and electrical characterization of laser ablated highly oriented zirconium titanate thin films in a metal oxide semiconductor configuration
    Semiconductor Science and Technology, vol. 18, no. 2, pp. 183–189, 2003
  55. Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates
    Journal of Physics D: Applied Physics, vol. 36, no. 17, pp. 2134–2140, 2003
  56. Dielectric relaxation in laser ablated polycrystalline ZrTiO[sub 4] thin films
    Journal of Applied Physics, vol. 94, no. 8, p. 5135, 2003
  57. Normal ferroelectric to relaxor behavior in laser ablated Ca-doped barium titanate thin films
    Journal of Applied Physics, vol. 94, no. 12, p. 7702, 2003
  58. Analysis of leakage current conduction phenomenon in thin SrBi[sub 2]Ta[sub 2]O[sub 9] films grown by excimer laser ablation
    Journal of Applied Physics, vol. 91, no. 7, p. 4543, 2002
  59. Leakage current conduction of pulsed excimer laser ablated BaBi[sub 2]Nb[sub 2]O[sub 9] thin films
    Journal of Applied Physics, vol. 92, no. 1, p. 415, 2002
  60. Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi[sub 2]Ta[sub 2]O[sub 9] thin films
    Journal of Applied Physics, vol. 92, no. 2, p. 1056, 2002
  61. Alternating Current Conduction and Impedance Spectroscopy Analysis on Pulsed Excimer Laser Ablated (Pb, La)TiO 3 Thin Films
    Integrated Ferroelectrics, vol. 46, no. 1, pp. 143–152, 2002
  62. Study of Thickness Dependence on Electrical Properties of (Pb,La)TiO 3 Thin Films for Memory Applications
    Integrated Ferroelectrics, vol. 46, no. 1, pp. 133–141, 2002
  63. Study of Relaxor Behavior of 0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 Thin Films
    Integrated Ferroelectrics, vol. 46, no. 1, pp. 153–162, 2002
  64. The Thickness Dependence of the Electrical and Dielectric Properties in the Laser Ablated SrBi 2 Nb 2 O 9 Thin Films
    Integrated Ferroelectrics, vol. 50, no. 1, pp. 159–169, 2002
  65. ac transport studies of La-modified antiferroelectric lead zirconate thin films
    Physical Review B, vol. 65, no. 17, 2002
  66. Dielectric properties of La-modified antiferroelectric PbZrO3 thin films
    Materials Science and Engineering B, vol. 88, no. 1, pp. 22–25, 2002
  67. Reversible and irreversible switching processes in pure and lanthanum modified lead zirconate thin films
    Materials Science and Engineering B, vol. 94, no. 2-3, pp. 218–222, 2002
  68. Electrical characterization of Ba(Zr0.1Ti0.9)O3 thin films grown by pulsed laser ablation technique
    Materials Science and Engineering B, vol. 95, no. 2, pp. 124–130, 2002
  69. Pulsed excimer laser ablation growth and characterization of Ba(Sn0.1Ti0.9)O3 thin films
    Solid State Communications, vol. 121, no. 6-7, pp. 329–332, 2002
  70. Growth and characterization of Ba(Zr0.1Ti0.9)O3 thin films deposited by pulsed excimer laser ablation
    Solid State Communications, vol. 122, no. 7-8, pp. 429–432, 2002
  71. Dielectric and ferroelectric response of sol–gel derived Pb0.85La0.15TiO3 ferroelectric thin films on different bottom electrodes
    Thin Solid Films, vol. 406, no. 1-2, pp. 30–39, 2002
  72. Investigation of reversible and irreversible polarizations in thin films of SrBi2(Ta0.5,Nb0.5)2O9
    Thin Solid Films, vol. 422, no. 1-2, pp. 155–160, 2002
  73. Study of pulsed laser deposited lead lanthanum titanate thin films
    Thin Solid Films, vol. 389, no. 1-2, pp. 84–90, 2001
  74. Study of AC electrical properties in multigrain antiferroelectric lead zirconate thin films
    Thin Solid Films, vol. 391, no. 1, pp. 126–132, 2001
  75. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
    Solid-State Electronics, vol. 45, no. 1, pp. 133–141, 2001
  76. Study of pulsed laser ablated CaBi2Ta2O9 thin films
    Solid State Communications, vol. 119, no. 3, pp. 127–131, 2001
  77. Temperature dependence on the response of inversion layer with zirconium titanate as oxide in MOS configuration
    Solid State Communications, vol. 120, no. 9-10, pp. 379–382, 2001
  78. Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO[sub 3] thin films
    Applied Physics Letters, vol. 78, no. 12, p. 1730, 2001
  79. Structural and electrical characteristics of Pb[sub 0.90]La[sub 0.15]TiO[sub 3] thin films on different bottom electrodes
    Journal of Applied Physics, vol. 89, no. 10, p. 5637, 2001
  80. Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy
    Journal of Applied Physics, vol. 89, no. 11, p. 5972, 2001
  81. CaBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films prepared by pulsed laser deposition
    Applied Physics Letters, vol. 78, no. 19, p. 2925, 2001
  82. Large reduction of leakage current by graded-layer La doping in (Ba[sub 0.5],?Sr[sub 0.5])TiO[sub 3] thin films
    Applied Physics Letters, vol. 79, no. 1, p. 111, 2001
  83. Effect of acceptor and donor dopants on polarization components of lead zirconate titanate thin films
    Applied Physics Letters, vol. 79, no. 2, p. 239, 2001
  84. Transient analysis in Al-doped barium strontium titanate thin films grown by pulsed laser deposition
    Journal of Applied Physics, vol. 90, no. 3, p. 1250, 2001
  85. Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films
    Journal of Applied Physics, vol. 90, no. 6, p. 2975, 2001
  86. Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures
    Physica B Condensed Matter, vol. 307, no. 1-4, pp. 125–137, 2001
  87. Electrical properties of La-graded heterostructure of Pb1-xLaxTiO3 thin films
    Materials Science and Engineering B, vol. 86, no. 2, pp. 172–177, 2001
  88. Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
    Materials Science and Engineering B, vol. 87, no. 2, pp. 141–147, 2001
  89. Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric PbZrO[sub 3] thin films
    Journal of Applied Physics, vol. 89, no. 8, p. 4541, 2001
  90. Field-induced dielectric properties of laser ablated antiferroelectric (Pb[sub 0.99]Nb[sub 0.02])(Zr[sub 0.57]Sn[sub 0.38]Ti[sub 0.05])[sub 0.98]O[sub 3] thin films
    Applied Physics Letters, vol. 77, no. 25, p. 4208, 2000
  91. Dielectric response in pulsed laser ablated (Ba,Sr)TiO[sub 3] thin films
    Journal of Applied Physics, vol. 87, no. 2, p. 849, 2000
  92. Impact of microstructure on the electrical stress induced effects of pulsed laser ablated (Ba,?Sr)TiO[sub 3] thin films
    Journal of Applied Physics, vol. 87, no. 6, p. 3056, 2000
  93. Dielectric and dc electrical studies of antiferroelectric lead zirconate thin films
    Materials Science and Engineering B, vol. 78, no. 1, pp. 1–10, 2000
  94. Dielectric relaxation in antiferroelectric multigrain PbZrO3 thin films
    Materials Science and Engineering B, vol. 78, no. 2-3, pp. 75–83, 2000
  95. Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes
    Solid-State Electronics, vol. 44, no. 6, pp. 1089–1097, 2000
  96. Alternating current conduction behavior of excimer laser ablated SrBi[sub 2]Nb[sub 2]O[sub 9] thin films
    Journal of Applied Physics, vol. 88, no. 7, p. 4294, 2000
  97. Microstructure related influence on the electrical properties of pulsed laser ablated (Ba,?Sr)TiO[sub 3] thin films
    Journal of Applied Physics, vol. 88, no. 6, p. 3506, 2000
  98. Alternating current electrical properties of antiferroelectric lead zirconate thin films by pulsed excimer laser ablation
    Journal of Applied Physics, vol. 88, no. 4, p. 2072, 2000
  99. Growth and characterization of excimer laser-ablated BaBi[sub 2]Nb[sub 2]O[sub 9] thin films
    Applied Physics Letters, vol. 77, no. 23, p. 3818, 2000
  100. Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy
    Materials Research Bulletin, vol. 35, no. 1, pp. 125–133, 2000
  101. Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation
    Materials Research Bulletin, vol. 35, no. 6, pp. 909–919, 2000
  102. Growth and study of SrBi2 (Ta, Nb)2 O9 thin films by pulsed excimer laser ablation
    Solid State Communications, vol. 114, no. 11, pp. 585–588, 2000
  103. Pulsed excimer laser ablated copper indium diselenide thin films
    Solid State Communications, vol. 116, no. 12, pp. 649–653, 2000
  104. Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures
    Applied Physics A: Materials Science & Processing, vol. 68, no. 1, pp. 49–55, 1999
  105. Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes
    Solid-State Electronics, vol. 43, no. 12, pp. 2135–2139, 1999
  106. Study of the electrical properties of pulsed laser ablated (Ba0.5Sr0.5)TiO3 thin films
    Materials Science and Engineering B, vol. 57, no. 2, pp. 135–146, 1999
  107. Si incorporation and Burstein–Moss shift in n-type GaAs
    Materials Science and Engineering B, vol. 60, no. 1, pp. 1–11, 1999
  108. Impedance-fatigue correlated studies on SrBi2Ta2O9
    Materials Science and Engineering B, vol. 64, no. 3, pp. 149–156, 1999
  109. Antiferroelectric lead zirconate thin films by pulsed laser ablation
    Materials Science and Engineering B, vol. 64, no. 1, pp. 54–59, 1999
  110. Growth and characterization of SrBi[sub 2]Nb[sub 2]O[sub 9] thin films by pulsed-laser ablation
    Applied Physics Letters, vol. 75, no. 17, p. 2656, 1999
  111. Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 3, p. 1003, 1999
  112. Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation
    Journal of Applied Physics, vol. 86, no. 10, p. 5862, 1999
  113. Photoluminescence studies on Si-doped GaAs/Ge
    Journal of Applied Physics, vol. 83, no. 8, p. 4454, 1998
  114. Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates
    Materials Science and Engineering B, vol. 55, no. 1-2, pp. 53–67, 1998
  115. Low temperature photoluminescence properties of Zn-doped GaAs
    Materials Science and Engineering B, vol. 57, no. 1, pp. 62–70, 1998
  116. Correlation of compensation in Si-doped GaAs between electrical and optical methods
    Solid State Communications, vol. 108, no. 7, pp. 457–461, 1998
  117. Role of growth conditions and Bi-content on the properties of SrBi2Ta2O9 thin films
    Solid State Communications, vol. 108, no. 10, pp. 759–763, 1998
  118. OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge
    Journal of Crystal Growth, vol. 193, no. 4, pp. 501–509, 1998
  119. Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers
    Solid State Communications, vol. 103, no. 7, pp. 411–416, 1997
  120. Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition
    Thin Solid Films, vol. 305, no. 1-2, pp. 144–156, 1997
  121. Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films
    Applied Physics Letters, vol. 70, no. 5, p. 628, 1997
  122. Zn incorporation and band gap shrinkage in p-type GaAs
    Journal of Applied Physics, vol. 82, no. 10, p. 4931, 1997
  123. Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films
    Applied Physics Letters, vol. 67, no. 14, p. 2014, 1995