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Alfred Huan
Articles in Scholarly Journals [Incomplete List]
Band engineering in the high-k dielectrics gate stacks
Microelectronic Engineering, vol. 84, no. 9-10, pp. 2332–2335, 2007
Epitaxial LaAlO[sub 3] thin film on silicon: Structure and electronic properties
Applied Physics Letters, vol. 90, no. 18, p. 181925, 2007
Mechanisms of silicon diffusion in erbium silicide
Physical Review B, vol. 75, no. 12, 2007
Thermal behavior of localized surface plasmon resonance of Au/TiO[sub 2] core/shell nanoparticle arrays
Applied Physics Letters, vol. 90, no. 18, p. 183117, 2007
First-principles simulations of Si vacancy diffusion in erbium silicide
Physical Review B, vol. 76, no. 3, 2007
Chemical tuning of band alignments for metal gate/high-κ oxide interfaces
Physical Review B, vol. 73, no. 4, 2006
Dimer rotation on the carbon-induced Si(001)-c(4Ã?4) structure
Physical Review B, vol. 74, no. 11, 2006
Evolution of Schottky barrier heights at Ni/HfO[sub 2] interfaces
Applied Physics Letters, vol. 88, no. 22, p. 222102, 2006
Energetic and magnetic properties of transition-metal nanowire encapsulated B[sub x]C[sub y]N[sub z] composite nanotubes
Applied Physics Letters, vol. 88, no. 19, p. 193117, 2006
Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy
Applied Physics Letters, vol. 88, no. 1, p. 011904, 2006
Fabrication of large area ordered metal nanoring arrays for nanoscale optical sensors
Journal of Non-Crystalline Solids, vol. 352, no. 23-25, pp. 2532–2535, 2006
Interaction of manganese with single-wall B2O nanotubes: An ab initio study
Physical Review B, vol. 73, no. 15, 2006
Structural and electronic properties of 4Ã? carbon nanotubes on Si(001) surfaces
Physical Review B, vol. 74, no. 23, 2006
Ab initio studies on Schottky barrier heights at metal gate/LaAlO[sub 3] (001) interfaces
Applied Physics Letters, vol. 89, no. 12, p. 122115, 2006
Adsorption and diffusion of Co on the Si(001) surface
Physical Review B, vol. 74, no. 19, 2006
Fabrication of tunable nanostructure arrays using ion-polishing-assisted nanosphere lithography
Journal of Applied Physics, vol. 99, no. 3, p. 034308, 2006
Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO[sub 2] gate dielectric
Applied Physics Letters, vol. 88, no. 19, p. 192103, 2006
Band-gap energies and structural properties of doped Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] thin films
Journal of Applied Physics, vol. 99, no. 1, p. 014106, 2006
First-principles studies on initial growth of Ni on MgO(001) surface
Surface Science, vol. 600, no. 10, pp. 2154–2162, 2006
Thermal stability and band alignments for Ge[sub 3]N[sub 4] dielectrics on Ge
Applied Physics Letters, vol. 89, no. 2, p. 022105, 2006
Energy-band alignments at LaAlO[sub 3] and Ge interfaces
Applied Physics Letters, vol. 89, no. 20, p. 202107, 2006
High-thermal-stability (HfO2)1-x(Al2O3)x film fabricated by dual-beam laser ablation
Thin Solid Films, vol. 504, no. 1-2, pp. 45–49, 2006
Structural properties and dopant-modified bandgap energies of Ba0.5 Sr 0.5 TiO 3 thin films grown on LaAlO 3 substrates
Journal of Electroceramics, vol. 16, no. 4, pp. 571–574, 2006
Growth and characterization of UHV sputtering HfO2 film by plasma oxidation and low temperature annealing
Journal of Electroceramics, vol. 16, no. 4, pp. 517–521, 2006
Physical and electrical characteristics of high-? gate dielectric Hf(1-x)LaxOy
Solid-State Electronics, vol. 50, no. 6, pp. 986–991, 2006
Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
Surface Science, vol. 600, no. 11, pp. 2288–2292, 2006
Evolution of Fermi level position and Schottky barrier height at Ni/MgO(001) interface
Surface Science, vol. 599, no. 1-3, pp. 255–261, 2005
Al[sub 2]O[sub 3]-incorporation effect on the band structure of Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] thin films
Applied Physics Letters, vol. 86, no. 11, p. 112910, 2005
Impact of interface structure on Schottky-barrier height for Ni/ZrO[sub 2](001) interfaces
Applied Physics Letters, vol. 86, no. 13, p. 132103, 2005
Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters, vol. 87, no. 7, p. 073506, 2005
Nanoporous Ultra-Low-Dielectric-Constant Fluoropolymer Films via Selective UV Decomposition of Poly(pentafluorostyrene)-block-Poly(methyl methacrylate) Copolymers Prepared Using Atom Transfer Radical Polymerization
Advanced Functional Materials, vol. 15, no. 2, pp. 315–322, 2005
Reduction of amplitude and wavelength of Friedel oscillation on Na(111) surface
Physical Review B, vol. 72, no. 15, 2005
First-principles study of ZrO_{2}â??Si interfaces: Energetics and band offsets
Physical Review B, vol. 72, no. 4, 2005
Thermally Robust<tex>$hbox TaTb_x hbox N$</tex>Metal Gate Electrode for n-MOSFETs Applications
IEEE Electron Device Letters, vol. 26, no. 2, pp. 75–77, 2005
International Journal of Nanoscience, vol. 3, no. 4 & 5, p. 639, 2004
Rule for Structures of Open Metal Surfaces
Physical Review Letters, vol. 93, no. 13, 2004
STM observation of Ga-dimers on a GaAs(001)-c(8×2)-Ga surface
Physical Review B, vol. 70, no. 8, 2004
Photoemission study of energy-band alignment for RuO[sub x]/HfO[sub 2]/Si system
Applied Physics Letters, vol. 85, no. 25, p. 6155, 2004
Energy-band alignments at ZrO[sub 2]/Si, SiGe, and Ge interfaces
Applied Physics Letters, vol. 85, no. 19, p. 4418, 2004
Surface modification of SiLK® by graft copolymerization with 4-vinylpyridine for reduction in copper diffusion
Applied Surface Science, vol. 225, no. 1-4, pp. 144–155, 2004
The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films
Thin Solid Films, vol. 462-463, pp. 106–109, 2004
Multilayer relaxations of (311), (331) and (210) fcc transition metal surfaces studied by pseudopotential DFT calculations
Surface Science, vol. 548, no. 1-3, pp. 309–316, 2004
Structure of Fe(3 1 0) studied by quantitative LEED analysis and pseudopotential DFT calculations
Surface Science, vol. 546, no. 2-3, pp. L808–L812, 2003
Magnetic properties of ultrathin Co films on Si (111)
Solid State Communications, vol. 126, no. 12, pp. 659–664, 2003
Langmuir, vol. 19, no. 17, pp. 6802–6806, 2003
Reaction of SiO[sub 2] with hafnium oxide in low oxygen pressure
Applied Physics Letters, vol. 82, no. 13, p. 2047, 2003
Multilayer relaxation of Cu(210) studied by layer-doubling LEED analysis and pseudopotential density functional theory calculations
Physical Review B, vol. 68, no. 11, 2003
Surface Review and Letters, vol. 10, no. 2 & 3, p. 493, 2003
Surface Passivation of (100)-Oriented GaAs with Ultrathin Fluoropolymer Films Deposited by Radio Frequency Magnetron Sputtering of Poly(tetrafluoroethylene)
Journal of The Electrochemical Society, vol. 150, no. 3, p. F53, 2003
Surface modification of polyimide films via plasma polymerization and deposition of allylpentafluorobenzene
Polymer, vol. 43, no. 26, pp. 7279–7288, 2002
Visualization of the effect of die shear rate on the outer surface morphology of ultrafiltration membranes by AFM
Journal of Membrane Science, vol. 196, no. 2, pp. 251–266, 2002
Langmuir, vol. 18, no. 16, pp. 6373–6380, 2002
Plasma polymerization of allylpentafluorobenzene on copper surfaces
Journal of Materials Chemistry, vol. 12, no. 3, pp. 426–431, 2002
Optical and electrical properties of p-type transparent conducting Cu–Al–O thin films prepared by plasma enhanced chemical vapor deposition
Materials Science and Engineering B, vol. 85, no. 2-3, pp. 131–134, 2001
RHEED and XPS Studies of the Decomposition of Silicon Dioxide by the Bombardment of Metal Ions
Surface Review and Letters, vol. 8, no. 5, pp. 521–526, 2001
Crystalline zirconia oxide on silicon as alternative gate dielectrics
Applied Physics Letters, vol. 78, no. 11, p. 1604, 2001
Characterization of inductively coupled plasma etched surface of GaN using Cl[sub 2]/BCl[sub 3] chemistry
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 19, no. 5, p. 2522, 2001
Semiconductor Science and Technology, vol. 16, no. 3, pp. L13–L16, 2001
Interface effects on magnetoresistance and magnetic-field-reduced Raman scattering in magnetite
Physical Review B, vol. 61, no. 10, pp. 6876–6878, 2000
Surface modification of poly(tetrafluoroethylene) films by low energy Ar+ ion-beam activation and UV-induced graft copolymerization
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 168, no. 1, pp. 29–39, 2000
Tungsten–carbon thin films deposited using screen grid technique in an electron cyclotron resonance chemical vapour deposition system
Surface and Coatings Technology, vol. 123, no. 2-3, pp. 134–139, 2000
Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device
Materials Research Bulletin, vol. 35, no. 3, pp. 477–486, 2000
Investigation of tungsten incorporated amorphous carbon film
Thin Solid Films, vol. 355-356, no. 1, pp. 174–178, 1999
Enhancement or reduction of catalytic dissolution reaction in chemically amplified resists by substrate contaminants
IEEE Transactions on Semiconductor Manufacturing, vol. 12, no. 4, pp. 462–469, 1999
Improvement on lithography pattern profile by plasma treatment
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 17, no. 4, p. 1526, 1999
Structure and magnetization of MnSb thin films deposited at different substrate temperatures
Journal of Applied Physics, vol. 85, no. 10, p. 7340, 1999
The role of nitrogen in the deposition of polycrystalline diamond films
Diamond and Related Materials, vol. 8, no. 2-5, pp. 215–219, 1999
Surface and interface studies of titanium silicide formation
Thin Solid Films, vol. 283, no. 1-2, pp. 130–134, 1996
SIMS study of NO, CO adsorption on Cu(100) and Cu(210) surfaces
Surface Science, vol. 304, no. 1-2, pp. 145–158, 1994