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Articles in Scholarly Journals [Incomplete List]

1. Design issues of a low power wideband frequency doubler implementation in 0.18 µm CMOS
   Analog Integrated Circuits and Signal Processing, vol. 53, no. 1, pp. 53–62, 2007
2. CMOS photodetector systems for low-level light applications
   Journal of Materials Science: Materials in Electronics, 2007
3. Flicker noise cancellation technique for low-voltage direct-conversion mixers
   Electronics Letters, vol. 43, no. 19, p. 1020, 2007
4. Theory of microplasma fluctuations and noise in silicon diode in avalanche breakdown
   Journal of Applied Physics, vol. 101, no. 6, p. 064515, 2007
5. Spectral function and responsivity of resonant tunneling and superlattice quantum dot infrared photodetectors using Green’s function
   Journal of Applied Physics, vol. 102, no. 8, p. 083108, 2007
6. Calculation of the Response of Field-Effect Transistors to Charged Biological Molecules
   IEEE Sensors Journal, vol. 7, no. 9, pp. 1233–1242, 2007
7. A Study of Ultrawideband Antennas for Near-Field Imaging
   IEEE Transactions on Antennas and Propagation, vol. 55, no. 4, pp. 1184–1188, 2007
8. Design of the Input Matching Network of RF CMOS LNAs for Low-Power Operation
   IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 54, no. 3, pp. 544–554, 2007
9. RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma
   Journal of The Electrochemical Society, vol. 154, no. 2, p. H127, 2007
10. Very low-voltage operation capability of complementary metal-oxide-semiconductor ring oscillators and logic gates
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 763, 2006
11. Signal and noise modeling and analysis of complementary metal-oxide semiconductor active pixel sensors
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 879, 2006
12. Charge localization in polymeric metal-oxide-semiconductor capacitors
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 649, 2006
13. Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 835, 2006
14. Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 860, 2006
15. Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 831, 2006
16. Growth and characterization of GaAsSb metamorphic samples on an InP substrate
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 587, 2006
17. Ultrawideband radar imaging system for biomedical applications
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 3, p. 752, 2006
18. Performance of organic thin-film transistors
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 4, p. 1728, 2006
19. High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues
    IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2062–2081, 2006
20. Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs
    IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2128–2142, 2006
21. An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level Applications
    IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2384–2391, 2006
22. Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy
    Applied Physics Letters, vol. 89, no. 11, p. 112107, 2006
23. Noise considerations in field-effect biosensors
    Journal of Applied Physics, vol. 100, no. 7, p. 074703, 2006
24. Spectral function of InAs/InGaAs quantum dots in a well detector using Green’s function
    Journal of Applied Physics, vol. 100, no. 9, p. 093102, 2006
25. Electrical characterization of semiconductor materials and devices—review
    Journal of Materials Science: Materials in Electronics, vol. 17, no. 8, pp. 549–575, 2006
26. Hot-carrier reliability of submicron NMOSFETs and integrated NMOS low noise amplifiers
    Microelectronics and Reliability, vol. 46, no. 2-4, pp. 201–212, 2006
27. A review of gate tunneling current in MOS devices
    Microelectronics and Reliability, vol. 46, no. 12, pp. 1939–1956, 2006
28. An approximate parallel-plate waveguide model of a lossy multilayered microstrip line
    Microwave and Optical Technology Letters, vol. 45, no. 1, pp. 23–26, 2005
29. Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors
    Journal of Applied Physics, vol. 98, no. 4, p. 044701, 2005
30. Modelling of the dynamic threshold MOSFET
    IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 5, p. 502, 2005
31. Low-power CMOS integrated circuits for radio frequency applications
    IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 5, p. 509, 2005
32. Charge transport in organic and polymer thin-film transistors: recent issues
    IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 3, p. 189, 2005
33. Editorial: Computers and Devices for Communication (CODEC 04)
    IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 5, p. 488, 2005
34. Analysis, Circuit Modeling, and Optimization of Mushroom Waveguide Photodetector (Mushroom-WGPD)
    Journal of Lightwave Technology, vol. 23, no. 1, pp. 423–431, 2005
35. Photosensitive Polymer Thin-Film FETs Based on Poly(3-octylthiophene)
    Proceedings of the IEEE, vol. 93, no. 7, pp. 1312–1320, 2005
36. Analysis and Circuit Modeling of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (WG-SACM-APD)
    IEEE Transactions on Electron Devices, vol. 52, no. 3, pp. 335–344, 2005
37. Effects of the Parasitics on the Time Response of RCE-PDs
    IEEE Transactions on Electron Devices, vol. 52, no. 3, pp. 325–334, 2005
38. A Model for the Performance Analysis and Design of Waveguide p-i-n Photodetectors
    IEEE Transactions on Electron Devices, vol. 52, no. 4, pp. 465–472, 2005
39. Accurate Modeling and Parameter Extraction for Meander-Line N-Well Resistors
    IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1364–1369, 2005
40. MOSFET Modeling for RF IC Design
    IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1286–1303, 2005
41. Characterization of MOS Structures Based on Poly (3,3$^primeprimeprime$-Dialkyl-Quaterthiophene)
    IEEE Transactions on Electron Devices, vol. 52, no. 10, pp. 2150–2156, 2005
42. Modeling the Partition of Noise From the Gate-Tunneling Current in MOSFETs
    IEEE Electron Device Letters, vol. 26, no. 8, pp. 550–552, 2005
43. A Parallel-Plate Waveguide Model of Lossy Microstrip Lines
    IEEE Microwave and Wireless Components Letters, vol. 15, no. 1, pp. 27–29, 2005
44. Microwave CMOS Traveling Wave Amplifiers: Performance and Temperature Effects
    IEEE Microwave and Wireless Components Letters, vol. 14, no. 4, pp. 142–144, 2004
45. Influence of Eccentricity on the Frequency Limitations of Circular-Pad Via-Holes
    IEEE Microwave and Wireless Components Letters, vol. 14, no. 6, pp. 265–267, 2004
46. Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s
    IEEE Transactions on Electron Devices, vol. 51, no. 11, pp. 1892–1901, 2004
47. Analytical Modeling of MOSFETs Channel Noise and Noise Parameters
    IEEE Transactions on Electron Devices, vol. 51, no. 12, pp. 2109–2114, 2004
48. Variable current transport in polymer thin film transistors
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 22, no. 3, p. 755, 2004
49. Modeling of mushroom waveguide photodetector
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 22, no. 3, p. 811, 2004
50. On the Performance Analysis and Design of an Integrated Front-End PIN/HBT Photoreceiver
    IEEE Journal of Quantum Electronics, vol. 40, no. 1, pp. 78–91, 2004
51. A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide
    IEEE Electron Device Letters, vol. 25, no. 4, pp. 202–204, 2004
52. Two-dimensional cmos-based image sensor system for fluorescent detection
    Canadian Journal of Electrical and Computer Engineering, vol. 29, no. 4, pp. 231–235, 2004
53. Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors
    IEE Proceedings - Circuits, Devices and Systems, vol. 151, no. 2, p. 125, 2004
54. Comparison of low-frequency noise in III–V and Si/SiGe HBTs
    IEE Proceedings - Circuits, Devices and Systems, vol. 151, no. 2, p. 138, 2004
55. Effects of body biasing on the low frequency noise of MOSFETs from a 130?nm CMOS technology
    IEE Proceedings - Circuits, Devices and Systems, vol. 151, no. 2, p. 95, 2004
56. Editorial: Noise in devices and circuits
    IEE Proceedings - Circuits, Devices and Systems, vol. 151, no. 2, p. 93, 2004
57. Low-frequency noise in polymer thin-film transistors
    IEE Proceedings - Circuits, Devices and Systems, vol. 151, no. 5, p. 466, 2004
58. A Pipeline Architecture for Processing of DNA Microarrays Images
    The Journal of VLSI Signal Processing-Systems for Signal, Image, and Video Technology, vol. 38, no. 3, pp. 287–297, 2004
59. Analysis, optimization, and spice modeling of resonant cavity enhanced p-i-n photodetector
    Journal of Lightwave Technology, vol. 21, no. 9, pp. 2031–2043, 2003
60. Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD)
    IEEE Transactions on Electron Devices, vol. 50, no. 3, pp. 790–801, 2003
61. Effects of hot-carrier stress on the performance of the lc-tank cmos oscillators
    IEEE Transactions on Electron Devices, vol. 50, no. 5, pp. 1334–1339, 2003
62. Circular-pad via model based on cavity field analysis
    IEEE Microwave and Wireless Components Letters, vol. 13, no. 11, pp. 481–483, 2003
63. Channel noise modeling of deep submicron MOSFETs
    IEEE Transactions on Electron Devices, vol. 49, no. 8, pp. 1484–1487, 2002
64. A new model for avalanche build-up of carriers in a SAGCM avalanche photodiode
    IEEE Transactions on Electron Devices, vol. 49, no. 12, pp. 2362–2366, 2002
65. On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 20, no. 3, p. 1067, 2002
66. The low frequency noise in reverse biased rectifier diodes
    IEEE Transactions on Electron Devices, vol. 49, no. 1, pp. 184–187, 2002
67. A scalable meander-line resistor model for silicon RFICs
    IEEE Transactions on Electron Devices, vol. 49, no. 1, pp. 187–190, 2002
68. High-frequency small signal AC and noise modeling of MOSFETs for RF IC design
    IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 400–408, 2002
69. Effect of forward and reverse substrate biasing on low-frequency noise in silicon PMOSFETs
    IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 409–413, 2002
70. A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs
    IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 514–520, 2002
71. Low-frequency noise in polysilicon-emitter bipolar transistors
    IEE Proceedings - Circuits, Devices and Systems, vol. 149, no. 1, p. 40, 2002
72. MOSFET 1/f noise model based on mobility fluctuation in linear region
    Electronics Letters, vol. 38, no. 9, p. 429, 2002
73. On the frequency response of a resonant-cavity-enhanced separate absorption, grading, charge, and multiplication avalanche photodiode
    Journal of Applied Physics, vol. 92, no. 12, p. 7133, 2002
74. A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs
    IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 5, pp. 1004–1005, 2001
75. Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling
    IEEE Transactions on Electron Devices, vol. 48, no. 4, pp. 661–670, 2001
76. Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
    IEEE Transactions on Electron Devices, vol. 48, no. 12, pp. 2884–2892, 2001
77. Low-bias performance of avalanche photodetector. A time-domain approach
    IEEE Journal of Quantum Electronics, vol. 37, no. 1, pp. 69–74, 2001
78. Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 18, no. 2, p. 757, 2000
79. Hot-carrier effects on radio frequency noise characteristics of LDD n-type metal–oxide–semiconductor field effect transistors
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 18, no. 2, p. 765, 2000
80. Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 18, no. 2, p. 610, 2000
81. Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes
    IEEE Transactions on Electron Devices, vol. 47, no. 3, pp. 537–543, 2000
82. Low-frequency electrical noise of high-speed, high-performance 1.3 µm strained multiquantum well gain-coupled distributed feedback lasers
    Journal of Applied Physics, vol. 88, no. 11, p. 6746, 2000
83. Asymmetry in the dark current low frequency noise characteristics of B–B and B–C quantum well infrared photodetectors from 10 to 80 K
    Journal of Applied Physics, vol. 87, no. 5, p. 2400, 2000
84. Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors
    Microelectronics Reliability, vol. 40, no. 11, pp. 1855–1861, 2000
85. On the origin of 1/f noise in polysilicon emitter bipolar transistors
    Journal of Applied Physics, vol. 85, no. 2, p. 1192, 1999
86. Low-frequency noise in a thin active layer a-Si:H thin-film transistors
    Journal of Applied Physics, vol. 85, no. 11, p. 7952, 1999
87. Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's
    IEEE Transactions on Electron Devices, vol. 46, no. 1, pp. 204–213, 1999
88. Low-frequency noise in proton damaged LDD MOSFET's
    IEEE Transactions on Electron Devices, vol. 46, no. 7, pp. 1339–1346, 1999
89. Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes
    IEEE Journal of Quantum Electronics, vol. 35, no. 8, pp. 1196–1202, 1999
90. Modeling of two-dimensional gain profiles for InP-InGaAs avalanche photodiodes with a stochastic approach
    IEEE Journal of Quantum Electronics, vol. 35, no. 12, pp. 1853–1862, 1999
91. A low-noise, low-power VCO with automatic amplitude control for wireless applications
    IEEE Journal of Solid-State Circuits, vol. 34, no. 6, pp. 761–771, 1999
92. A self-consistent lumped radio frequency linear network model for MOSFETs taking into account the gate resistance
    Canadian Journal of Physics, vol. 77, no. 5, pp. 371–384, 1999
93. Sensors for Detecting Sub-ppm NO[sub 2] Using Photochemically Produced Amorphous Tungsten Oxide
    Journal of The Electrochemical Society, vol. 145, no. 12, p. 4219, 1998
94. Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parameters
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 16, no. 2, p. 850, 1998
95. Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 16, no. 2, p. 855, 1998
96. Charge transfer efficiency in proton damaged CCD's
    IEEE Transactions on Nuclear Science, vol. 45, no. 2, pp. 154–163, 1998
97. Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors
    Journal of Applied Physics, vol. 83, no. 2, p. 820, 1998
98. Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors
    Journal of Applied Physics, vol. 84, no. 1, p. 625, 1998
99. Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs
    Electronics Letters, vol. 34, no. 2, p. 219, 1998
100. Averaging and recording of digital deep-level transient spectroscopy transient signals
     Review of Scientific Instruments, vol. 69, no. 6, p. 2464, 1998
101. High frequency noise of MOSFETs I Modeling
     Solid-State Electronics, vol. 42, no. 11, pp. 2069–2081, 1998
102. High frequency noise of MOSFETs. II. Experiments
     Solid-State Electronics, vol. 42, no. 11, pp. 2083–2092, 1998
103. A 4.2K CMOS optical detector
     Cryogenics, vol. 38, no. 9, pp. 943–945, 1998
104. Effects of forward biasing the substrate on the low temperature behaviour of n-MOS transistors
     Electronics Letters, vol. 33, no. 17, p. 1456, 1997
105. Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs
     IEEE Transactions on Electron Devices, vol. 43, no. 7, pp. 1114–1122, 1996
106. Low frequency noise in separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes
     Electronics Letters, vol. 32, no. 3, p. 250, 1996
107. Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor
     Solid-State Electronics, vol. 39, no. 6, pp. 909–913, 1996
108. Low frequency noise in polysilicon-emitter bipolar junction transistors
     Journal of Applied Physics, vol. 77, no. 12, p. 6278, 1995
109. Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes
     IEEE Transactions on Electron Devices, vol. 42, no. 5, pp. 810–818, 1995
110. A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor
     IEEE Transactions on Electron Devices, vol. 42, no. 7, pp. 1388–1390, 1995
111. Device parameters extraction in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes
     IEEE Transactions on Electron Devices, vol. 42, no. 12, pp. 2070–2079, 1995
112. Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes
     IEEE Journal of Quantum Electronics, vol. 31, no. 11, pp. 2078–2089, 1995
113. New RTD large-signal DC model suitable for PSPICE
     IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 14, no. 2, pp. 167–172, 1995
114. Temperature effects on heavily doped polycrystalline silicon
     Journal of Applied Physics, vol. 76, no. 9, p. 5253, 1994
115. Reversible charge transfer complexes between molecular oxygen and poly(3-alkylthiophene)s
     Advanced Materials, vol. 6, no. 11, pp. 838–841, 1994
116. New BiCMOS delay model to include RC-limited BJT saturation effect
     Solid-State Electronics, vol. 36, no. 11, pp. 1523–1528, 1993
117. A physical model for the edge effects in narrow-width MOSFETs
     Solid-State Electronics, vol. 36, no. 11, pp. 1557–1562, 1993
118. Low frequency noise as a characterization tool for InP- and GaAs-based double-barrier resonant tunnelling diodes
     Materials Science and Engineering B, vol. 20, no. 1-2, pp. 207–213, 1993
119. Microwave noise characterisation of poly-emitter bipolar junction transistors
     Electronics Letters, vol. 29, no. 8, p. 676, 1993
120. New static storage scheme for analogue signals using four-state resonant-tunnelling devices
     Electronics Letters, vol. 29, no. 16, p. 1435, 1993
121. Effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors
     IEEE Transactions on Nuclear Science, vol. 40, no. 3, pp. 288–294, 1993
122. DIBL in short-channel NMOS devices at 77 K
     IEEE Transactions on Electron Devices, vol. 39, no. 4, pp. 908–915, 1992
123. A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load
     IEEE Journal of Solid-State Circuits, vol. 27, no. 8, pp. 1198–1202, 1992
124. A new 1/f noise model for metal-oxide-semiconductor field-effect transistors in saturation and deep saturation
     Journal of Applied Physics, vol. 72, no. 12, p. 5990, 1992
125. Simple method to determine series resistance and its temperature dependence in AIAs/GaAs/AIAs double barrier resonant tunnelling diodes
     Electronics Letters, vol. 28, no. 13, p. 1195, 1992
126. Determination of interface state density in MOSFETs using the spatial profiling charge pumping technique
     Solid-State Electronics, vol. 35, no. 8, pp. 1059–1063, 1992
127. A simple propagation delay model for BiCMOS driver circuits
     Solid-State Electronics, vol. 35, no. 1, pp. 9–13, 1992
128. Parallel parasitic conductance in narrow-width MOSFETs
     Solid-State Electronics, vol. 34, no. 12, pp. 1381–1386, 1991
129. Comparison of drain-induced barrier-lowering in short-channel NMOS and PMOS devices at 77 K
     Solid-State Electronics, vol. 34, no. 10, pp. 1065–1070, 1991
130. Edge effects in narrow-width MOSFET's
     IEEE Transactions on Electron Devices, vol. 38, no. 8, pp. 1815–1819, 1991
131. The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K
     Solid-State Electronics, vol. 33, no. 10, pp. 1265–1273, 1990
132. A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction
     Solid-State Electronics, vol. 33, no. 5, pp. 503–511, 1990
133. Substrate currents in short buried-channel PMOS devices at cryogenic temperatures
     Cryogenics, vol. 30, no. 12, pp. 1113–1117, 1990
134. Low frequency noise studies of AlAs — GaAs — AlAs quantum well diodes at 77 K
     Cryogenics, vol. 30, no. 12, pp. 1140–1145, 1990
135. Substrate bias effects on drain-induced barrier lowering in short channel PMOS devices at 77 K
     Cryogenics, vol. 30, no. 12, pp. 1160–1165, 1990
136. Experimental study of microwave reflection gain of AlAs/GaAs/AlAs quantum well structures
     Electronics Letters, vol. 26, no. 2, p. 84, 1990
137. Novel power combining technique for MMIC oscillators
     Electronics Letters, vol. 26, no. 5, p. 300, 1990
138. Anomalous drain-induced barrier lowering in short channel NMOS devices at 77 K
     Electronics Letters, vol. 26, no. 18, p. 1493, 1990
139. Low temperature dependence of the hole impact ionisation constants determined from PMOS transistors
     Electronics Letters, vol. 26, no. 23, p. 1975, 1990
140. Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devices
     IEEE Transactions on Electron Devices, vol. 37, no. 7, pp. 1707–1713, 1990
141. Digital characteristics of CMOS devices at cryogenic temperatures
     IEEE Journal of Solid-State Circuits, vol. 24, no. 1, pp. 158–164, 1989
142. Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperatures
     Solid-State Electronics, vol. 32, no. 11, pp. 1009–1012, 1989
143. Cryogenic operation of CMOS-based microsystems and computers
     Microprocessors and Microsystems, vol. 13, no. 4, pp. 245–253, 1989
144. Operational characteristics of CMOS op-amps at cryogenic temperatures
     Solid-State Electronics, vol. 31, no. 2, pp. 291–297, 1988
145. Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters
     Solid-State Electronics, vol. 31, no. 8, pp. 1299–1308, 1988
146. Operational characteristics of a CMOS microprocessor system at cryogenic temperatures
     Cryogenics, vol. 28, no. 5, pp. 336–338, 1988
147. The effect of the deposition rate on the properties of d.c.-magnetron-sputtered niobium nitride thin films
     Thin Solid Films, vol. 152, no. 3, pp. 535–544, 1987