Diana Nesheva received her M.S. degree in solid state physics from Sofia University, Bulgaria in 1976. In 1982, she received her Ph.D. degree from the Institute of Solid State Physics (ISSP) of the Bulgarian Academy of Sciences. In 2009, she defended a Doctor of Science thesis entitled “Nanostructured thin films containing semiconductor materials (CdSe, Si, Se, Se-Te).” Presently, she is an Associate Professor, the Head of the Division Nanophysics in ISSP. She is mainly interested in single layers and two-component systems including two- and zero-dimensional inorganic semiconductor materials (multilayers and superlattices from amorphous and nanocrystalline II-VI, Si, Se, Ge-S(Se) as well as semiconductor nanoparticles from these semiconductors embedded in various matrices), investigation of size-induced effects in the electron and phonon subsystems, structure and structural stability, optical, electrical, and photoelectrical properties by applying X-ray diffraction, electron and scanning probe microcopies, Raman scattering, photoluminescence, optical absorption, and DC electrical measurements. She was among the main organizers of the biannual International School on Condensed Matter Physics in the period 2000-2010 and a Member of the International Scientific/Programme Committees of SSC 2006, ICANS23 2009, biannual ANC-1 2001 to ANC-4 2009. She was a Member of the Advisory Board of the Journal of Optoelectronics and Advanced Materials. Presently, Nesheva is a Member of the Advisory Board of the journal Optoelectronics and Advanced Materials - Rapid Communications.
Biography Updated on 15 February 2011