T. S. Kalkur

Personal Home Page

http://eceweb.uccs.edu/kalkur/RESUME.htm

Articles in Scholarly Journals [Incomplete List]

  1. Tunable Ferroelectric Capacitor-Based Voltage-Controlled Oscillator
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 54, no. 2, pp. 222–226, 2007
  2. VOLTAGE-CONTROLLED OSCILLATOR DESIGN USING FERROELECTRIC VARACTORS
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 157–163, 2006
  3. PARAMETERIZED FERROELECTRIC CAPACITOR MACROMODEL SUITABLE FOR MIXED SIGNAL CIRCUIT DESIGN APPLICATIONS
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 165–179, 2006
  4. POLARIZATION SWITCHING ANALOG TO DIGITAL CONVERTER
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 181–186, 2006
  5. FERROELECTRIC CHARGE TRANSFER DEVICE USING POLARIZATION-ASSISTED TUNNELING FOR SINGLE TRANSISTOR NONVOLATILE MEMORIES
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 187–196, 2006
  6. DESIGN, MODELING AND CHARACTERIZATION OF AN ACTIVE PHASE SHIFTER USING A FERROELECTRIC CAPACITOR
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 197–205, 2006
  7. A 1-GHz Active Phase Shifter With a Ferroelectric Varactor
    IEEE Microwave and Wireless Components Letters, vol. 16, no. 5, pp. 261–263, 2006
  8. Ferroelectric properties of YMnO films deposited by metalorganic chemical vapor deposition on Pt/Ti/SiO/Si substrates
    Materials Letters, vol. 60, no. 3, pp. 295–297, 2006
  9. Effect of annealing on leakage current in Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] and Ba[sub 0.96]Ca[sub 0.04]Ti[sub 0.84]Zr[sub 0.16]O[sub 3] thin films with Pt electrodes
    Applied Physics Letters, vol. 87, no. 3, p. 032903, 2005
  10. Polarization-switching D/A converter
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 52, no. 5, pp. 837–843, 2005
  11. High-Speed Current-Mode Logic Amplifier Using Positive Feedback and Feed-Forward Source-Follower Techniques for High-Speed CMOS I/O Buffer
    IEEE Journal of Solid-State Circuits, vol. 40, no. 3, pp. 796–802, 2005
  12. Modeling of charge switching in ferroelectric capacitors
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 51, no. 7, pp. 785–792, 2004
  13. Low temperature deposited Ba[sub 0.96]Ca[sub 0.04]Ti[sub 0.84]Zr[sub 0.16]O[sub 3] thin films on Pt electrodes by radio frequency magnetron sputtering
    Applied Physics Letters, vol. 84, no. 5, p. 771, 2004
  14. A Tunable Active Phase Shifter Using a Thin Film Ferroelectric Capacitor
    Integrated Ferroelectrics, vol. 66, no. 1, pp. 153–161, 2004
  15. Verilog-A Modeling of Ferroelectric High-K Capacitors for Tunable Circuit Applications
    Integrated Ferroelectrics, vol. 66, no. 1, pp. 163–170, 2004
  16. Vector Network Analyzer Characterization of Parallel Plate Capacitors with High-K Dielectrics
    Integrated Ferroelectrics, vol. 66, no. 1, pp. 171–178, 2004
  17. C-Axis Oriented MOCVD YMnO 3 Thin Film and Its Electrical Characteristics in MFIS FeTRAM
    Integrated Ferroelectrics, vol. 68, no. 1, pp. 75–84, 2004
  18. A 9-Bit Bipolar Polarization-Switching Digital-to-Analog Converter Based on Ferroelectric Capacitors
    Integrated Ferroelectrics, vol. 67, no. 1, pp. 213–220, 2004
  19. Dielectric Properties of Ba 0.5 Sr 0.5 TiO 3 Thin Films from DC to Ka Band
    Integrated Ferroelectrics, vol. 53, no. 1, pp. 413–420, 2003
  20. Tunable Voltage-Controlled Oscillator (VCO) with High Dielectric Constant BCTZ Capacitors
    Integrated Ferroelectrics, vol. 56, no. 1, pp. 1123–1129, 2003
  21. A Proposed Architecture for Polarization-Switching D/A Converter (PDAC)
    Integrated Ferroelectrics, vol. 56, no. 1, pp. 1141–1149, 2003
  22. A 1.8 V 4 k FeRAM Chip Using 0.2 u Process and Novel Design Techniques
    Integrated Ferroelectrics, vol. 56, no. 1, pp. 1151–1160, 2003
  23. An Equivalent Circuit Model for Ba 0.5 Sr 0.5 TiO 3 -Based Capacitors
    Integrated Ferroelectrics, vol. 58, no. 1, pp. 1395–1402, 2003
  24. Dielectric properties and tunability of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films on Pt/MgO fabricated by metal organic decomposition method
    Materials Letters, vol. 57, no. 26-27, pp. 4147–4150, 2003
  25. A clock interconnect extractor for multigigahertz frequencies incorporating inductance effect
    IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 11, no. 6, pp. 1143–1146, 2003
  26. Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown on thin Bi layer-coated Pt(111)/Ti/SiO2/Si substrates
    Thin Solid Films, vol. 402, no. 1-2, pp. 307–310, 2002
  27. Dielectric and Tunable Properties of B 0.96 Ca 0.04 Ti 0.84 Zr 0.16 O 3 (BCTZ) on MgO and SiO 2 /Si Substrates
    Integrated Ferroelectrics, vol. 45, no. 1, pp. 123–129, 2002
  28. Modeling of Ferroelectric Switching Excited by Triangular or Sinusoidal Voltage Signals
    Integrated Ferroelectrics, vol. 48, no. 1, pp. 79–87, 2002
  29. Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method
    Applied Physics Letters, vol. 78, no. 22, p. 3517, 2001
  30. The effect of ground vias on changing signal layers in a multilayered PCB
    Microwave and Optical Technology Letters, vol. 28, no. 4, pp. 257–260, 2000
  31. Journal of Physics D: Applied Physics, vol. 17, no. 8, pp. L115–L117, 2000
  32. Degradation of scanned-electron-beam-alloyed Ohmic contacts on n-GaAs
    Semiconductor Science and Technology, vol. 2, no. 9, pp. 615–620, 1999
  33. Smart Materials and Structures, vol. 5, no. 2, pp. 165–170, 1999
  34. A high CMRR current mode CMOS preamplifier for magnetic recording systems
    IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 46, no. 2, pp. 129–133, 1999
  35. Journal of Electronic Testing, vol. 11, no. 3, pp. 273–283, 1997
  36. Analysis of the switching speed of BiCMOS buffer under high current
    IEEE Journal of Solid-State Circuits, vol. 29, no. 7, pp. 787–796, 1994
  37. Analysis of BiCMOS buffer for input voltages with finite rise time
    IEEE Journal of Solid-State Circuits, vol. 29, no. 7, pp. 797–807, 1994
  38. A delay model and optimization method of a low-power BiCMOS logic circuit
    IEEE Journal of Solid-State Circuits, vol. 29, no. 10, pp. 1191–1199, 1994
  39. Properties of ferroelectric PbTiO3 films grown in an ionized cluster beam system
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 11, no. 4, p. 1406, 1993
  40. Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si
    Thin Solid Films, vol. 207, no. 1-2, pp. 193–196, 1992
  41. Characteristics of rapidly thermally annealed RuO2 films on SiO2
    Thin Solid Films, vol. 205, no. 2, pp. 266–269, 1991
  42. Field variation of the rf penetration depth and its effect on kinetic inductance in Bi2Sr2CaCu2Ox microstrip transmission lines
    Journal of Applied Physics, vol. 69, no. 9, p. 6693, 1991
  43. Bi-Sr-Ca-Cu-O thin-film energy gap as a function of temperature and force applied to squeezable-electron-tunneling junctions
    Physical Review B, vol. 43, no. 13, pp. 11492–11495, 1991
  44. Tunneling measurements of the zero-bias conductance peak and the Bi-Sr-Ca-Cu-O thin-film energy gap
    Physical Review Letters, vol. 66, no. 4, pp. 516–519, 1991
  45. High critical temperature superconductor tunneling spectroscopy using squeezable electron tunneling junctions
    IEEE Transactions on Magnetics, vol. 27, no. 2, pp. 840–843, 1991
  46. Manganese-Based Ohmic Contact to p-GaAs
    Journal of The Electrochemical Society, vol. 138, no. 11, p. 3456, 1991
  47. Activation of Be-Implanted GaAs by Using RTA with Proximity Contact
    Journal of The Electrochemical Society, vol. 137, no. 6, p. 1904, 1990
  48. Effect of an SiO2 layer on the superconductive properties of the high-Tc Bi-Sr-Ca-Cu-O films
    Journal of Applied Physics, vol. 67, no. 2, p. 918, 1990
  49. Hall effect of the high-Tc superconducting Bi-Sr-Ca-Cu-O thin film
    Journal of Applied Physics, vol. 68, no. 1, p. 218, 1990
  50. Schottky contacts on rapidly thermally annealed GaAs
    Thin Solid Films, vol. 187, no. 1, pp. 19–24, 1990
  51. Erbium-oxide-based metal-insulator-semiconductor structures on silicon
    Thin Solid Films, vol. 188, no. 2, pp. 203–211, 1990
  52. Mocrowave conductivity of superconducting Bi-Sr-Ca-Cu-O thin films in the 26.5 to 40.0 GHz frequency range
    Physica C Superconductivity, vol. 168, no. 1-2, pp. 91–98, 1990
  53. Non-alloyed ohmic contacts on rapid thermally Zn diffused GaAs
    Solid-State Electronics, vol. 32, no. 4, pp. 281–285, 1989
  54. Yttrium oxide based metal-insulator-semiconductor structures on silicon
    Thin Solid Films, vol. 170, no. 2, pp. 185–189, 1989
  55. Rapid Thermal Alloyed Ohmic Contacts to p-Type GaAs
    Journal of The Electrochemical Society, vol. 136, no. 10, p. 3123, 1989
  56. Preliminary Studies on Mo-In-Mn Based Ohmic Contacts to p-GaAs
    Journal of The Electrochemical Society, vol. 136, no. 11, p. 3549, 1989
  57. Scanned electron beam alloyed ohmic contacts to n-GaAs
    Solid-State Electronics, vol. 30, no. 6, pp. 619–625, 1987
  58. Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs
    Journal of Applied Physics, vol. 60, no. 9, p. 3100, 1986
  59. SEM alloyed Au$z.sbnd;Ge$z.sbnd;Ni ohmic contacts to GaAs
    Applications of Surface Science, vol. 22-23, pp. 1019–1026, 1985
  60. Au_Ge_Ni migration affected by operating conditions of GaAs FETs
    Solid-State Electronics, vol. 27, no. 5, pp. 447–452, 1984