Articles in Scholarly Journals [Incomplete List]

1. Device and Technology Evolution for Si-Based RF Integrated Circuits
   IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1235–1258, 2005
2. Optimization of EDGE Terminal Power Amplifiers Using Memoryless Digital Predistortion
   IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 2, pp. 515–522, 2005
3. RF and AMS
   IEEE Circuits and Devices Magazine, vol. 20, no. 6, pp. 38–51, 2004
4. Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors
   IEEE Transactions on Electron Devices, vol. 47, no. 2, pp. 274–281, 2000
5. Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors
   IEEE Transactions on Electron Devices, vol. 46, no. 4, pp. 622–627, 1999
6. A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
   IEEE Transactions on Electron Devices, vol. 45, no. 8, pp. 1846–1848, 1998
7. A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications
   IEEE Journal of Solid-State Circuits, vol. 33, no. 9, pp. 1277–1283, 1998
8. A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors
   IEEE Electron Device Letters, vol. 19, no. 12, pp. 469–471, 1998
9. A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography
   IEEE Journal of Solid-State Circuits, vol. 32, no. 9, pp. 1342–1349, 1997
10. Introduction To The 18th Annual IEEE GaAs IC Symposium Special Issue
    IEEE Journal of Solid-State Circuits, vol. 32, no. 9, pp. 1307–1309, 1997
11. Accurate large-signal GaAs MESFET and HEMT modeling for power MMIC amplifier design
    International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, vol. 5, no. 3, pp. 195–209, 1995
12. Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study
    Applied Surface Science, vol. 50, no. 1-4, pp. 138–142, 1991
13. Doping of semi-insulating and n-type GaAs by neutron transmutation
    Journal of Applied Physics, vol. 51, no. 6, p. 3178, 1980