Tian-Ling Ren

Articles in Scholarly Journals [Incomplete List]

  1. Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM
    Materials Science and Engineering: B, vol. 138, no. 3, pp. 219–223, 2007
  2. NiCuZn ferrite thin films grown by a sol–gel method and rapid thermal annealing
    Journal of Magnetism and Magnetic Materials, vol. 309, no. 1, pp. 75–79, 2007
  3. Micro-Raman measurement of thickness in microelectromechanical silicon structures
    Journal of Micromechanics and Microengineering, vol. 17, no. 6, pp. 1114–1120, 2007
  4. Correspondence modeling and design optimization of large-deflection piezoelectric folded cantilever microactuators
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 53, no. 1, pp. 237–240, 2006
  5. DESIGN AND SIMULATION OF A NOVEL OPERATION MODE OF INTEGRATED FERROELECTRIC MICRO-SENSORS
    Integrated Ferroelectrics, vol. 78, no. 1, pp. 59–67, 2006
  6. MODELING SWITCHING DELAY OF FERROELECTRIC DOMAINS FOR FERROELECTRIC CAPACITOR
    Integrated Ferroelectrics, vol. 78, no. 1, pp. 75–84, 2006
  7. STUDIES ON THE RELAX BEHAVIOR OF SrBi 2 Ta 2 O 9 THIN FILMS
    Integrated Ferroelectrics, vol. 79, no. 1, pp. 81–87, 2006
  8. RIE EFFECT ON THE FERROELECTRIC PROPERTIES
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 69–76, 2006
  9. STUDY ON STRESS OF THE FILMS APPLIED TO FeRAM
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 97–103, 2006
  10. NON-COLUMNAR GRAINED MICROSTRUCTURE IN FERROELECTRIC PZT THIN FILMS VIA CONCENTRATION GRADED CSD
    Integrated Ferroelectrics, vol. 80, no. 1, pp. 273–280, 2006
  11. MICROSTRUCTURE AND FERROELECTRIC PROPERTIES OF Bi 3 TiTaO 9 THIN FILMS BY METALORGANIC DECOMPOSITION METHOD
    Integrated Ferroelectrics, vol. 79, no. 1, pp. 227–234, 2006
  12. CHARACTERIZATION OF IMPRINT BEHAVIOR FOR THE SrBi 2 Ta 2 O 9 THIN FILMS
    Integrated Ferroelectrics, vol. 79, no. 1, pp. 245–251, 2006
  13. MICRO ACOUSTIC DEVICES USING PIEZOELECTRIC FILMS
    Integrated Ferroelectrics, vol. 80, no. 1, pp. 331–340, 2006
  14. A NOVEL SCHEME OF CROSS BITLINES FOR FeRAM ARRAY
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 131–140, 2006
  15. DESIGN OF A NOVEL PIEZOELECTRIC ACOUSTIC SENSOR USING SURFACE MICROMACHINING
    Integrated Ferroelectrics, vol. 80, no. 1, pp. 363–372, 2006
  16. A NEW HIGH-RELIABLE 2T/1C FeRAM CELL
    Integrated Ferroelectrics, vol. 81, no. 1, pp. 149–155, 2006
  17. UNIFORMITY IMPROVEMENT OF PZT BASED ULTRASONIC TRANSDUCER
    Integrated Ferroelectrics, vol. 80, no. 1, pp. 373–381, 2006
  18. FABRICATION AND PROPERTIES OF Ru/Pb(Zr 0.4 Ti 0.6 )O 3 /Pt CAPACITOR
    Integrated Ferroelectrics, vol. 84, no. 1, pp. 219–225, 2006
  19. Pt/Pb(Zr, Ti)O3/Pt capacitor with excellent fatigue properties prepared by sol?gel process applied to FeRAM
    Journal of Physics D: Applied Physics, vol. 39, no. 12, pp. 2587–2591, 2006
  20. Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors
    Chinese Physics Letters, vol. 23, no. 4, pp. 1042–1045, 2006
  21. Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM
    Chinese Physics Letters, vol. 23, no. 7, pp. 1943–1946, 2006
  22. Large-scale Si1-xGex quantum dot arrays fabricated by templated catalytic etching
    Nanotechnology, vol. 17, no. 5, pp. 1476–1480, 2006
  23. NiCuZn ferrite thin films for RF integrated inductors
    Materials Letters, vol. 60, no. 11, pp. 1403–1406, 2006
  24. Ferroelectric properties of Pt/PbTiO[sub 3]/PbZr[sub 0.3]Ti[sub 0.7]O[sub 3]/PbTiO[sub 3]/Pt integrated capacitors etched in noncrystalline phase
    Applied Physics Letters, vol. 89, no. 18, p. 182901, 2006
  25. IMPRINT RELATED FATIGUE BEHAVIOR OF Pt/SrBi 2 Ta 2 O 9 /Pt CAPACITORS
    Integrated Ferroelectrics, vol. 73, no. 1, pp. 99–106, 2005
  26. FERROELECTRIC FILM PHASE SHIFTER UNDER ELEVATED MICROWAVE POWER
    Integrated Ferroelectrics, vol. 77, no. 1, pp. 139–149, 2005
  27. SIZE AND BOUNDARY EFFECT IN FERROELECTRIC THIN FILM FOR INTEGRATED PASSIVE COMPONENTS FOR RF COMMUNICATION
    Integrated Ferroelectrics, vol. 77, no. 1, pp. 165–172, 2005
  28. Influence of Stress on the Performance of PZT Thin Films for Microphone Application
    Integrated Ferroelectrics, vol. 69, no. 1, pp. 315–322, 2005
  29. PMUTs for Handwriting Recognition
    Integrated Ferroelectrics, vol. 69, no. 1, pp. 341–347, 2005
  30. Study of a Ferroelectrics-Silicon Integrated Microspeaker and Microspeaker Array
    Integrated Ferroelectrics, vol. 69, no. 1, pp. 357–366, 2005
  31. High Quality Silicon-Based AlN Thin Films for MEMS Application
    Integrated Ferroelectrics, vol. 69, no. 1, pp. 367–374, 2005
  32. Measurements of Ferroelectric MEMS Microphones
    Integrated Ferroelectrics, vol. 69, no. 1, pp. 417–429, 2005
  33. Dependence of GMR on NiFe Layer Thickness in High Sensitive Simple Spin Valve
    IEEE Sensors Journal, vol. 5, no. 5, pp. 905–908, 2005
  34. A New Modeling Technique for Simulating 3-D Arbitrary Conductor-Magnet Structures for RFIC Applications
    IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1354–1363, 2005
  35. Fabrication and Properties of Silicon-Based PLZT Thin Films for MFSFET Applications
    Integrated Ferroelectrics, vol. 61, no. 1, pp. 189–195, 2004
  36. Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories
    Integrated Ferroelectrics, vol. 61, no. 1, pp. 213–220, 2004
  37. The Effect of Substrate Materials on Orientation Degree of Lanthanum-Substituted Bismuth Titanate Thin Films
    Integrated Ferroelectrics, vol. 65, no. 1, pp. 3–11, 2004
  38. Simulation on the Hysteresis of Ferroelectric Thin Films
    Integrated Ferroelectrics, vol. 64, no. 1, pp. 69–75, 2004
  39. A Ferroelectric Capacitor Mathematical Model for Spice Simulation
    Integrated Ferroelectrics, vol. 64, no. 1, pp. 101–111, 2004
  40. Key Integration Techniques and Issues for Silicon-Based Ferroelectric Devices
    Integrated Ferroelectrics, vol. 66, no. 1, pp. 59–69, 2004
  41. Fabrication and Optical Properties of SrBi 4 Ti 4 O 15 /BaBi 4 Ti 4 O 15 Graded Ferroelectric Thin Films
    Integrated Ferroelectrics, vol. 68, no. 1, pp. 3–11, 2004
  42. A Novel Chain FRAM with Driven Plate Read Scheme
    Integrated Ferroelectrics, vol. 67, no. 1, pp. 221–227, 2004
  43. Graphic Solution and Analysis of Voltage Distribution Between Ferroelectric Capacitor/Capacitors and Bitline Capacitance
    Integrated Ferroelectrics, vol. 67, no. 1, pp. 287–298, 2004
  44. Miniature Microphone with Silicon-Based Ferroelectric Thin Films
    Integrated Ferroelectrics, vol. 52, no. 1, pp. 229–235, 2003
  45. Design of a Triaxial Piezoelectric Accelerometer
    Integrated Ferroelectrics, vol. 56, no. 1, pp. 1115–1122, 2003
  46. PZT Based MFS Structure for FeFET
    Integrated Ferroelectrics, vol. 57, no. 1, pp. 1241–1248, 2003
  47. Piezoelectric and ferroelectric films for microelectronic applications
    Materials Science and Engineering B, vol. 99, no. 1-3, pp. 159–163, 2003
  48. High-frequency properties of PZT for RF-communication applications
    Materials Science and Engineering B, vol. 99, no. 1-3, pp. 192–194, 2003
  49. Preparation and properties of PLZT thick films on silicon
    Materials Science and Engineering B, vol. 99, no. 1-3, pp. 195–198, 2003
  50. International Journal of Infrared and Millimeter Waves, vol. 24, no. 8, pp. 1341–1349, 2003
  51. High-sensitivity GMR with low coercivity in top-IrMn spin-valves
    Journal of Magnetism and Magnetic Materials, vol. 267, no. 3, pp. 386–390, 2003
  52. The optimization of Ta buffer layer in magnetron sputtering IrMn top spinvalve
    Thin Solid Films, vol. 441, no. 1-2, pp. 111–114, 2003
  53. Fabrication and properties of silicon-based PZT thin films for MFSFET applications
    Microelectronic Engineering, vol. 66, no. 1-4, pp. 554–560, 2003
  54. A novel ferroelectric based microphone
    Microelectronic Engineering, vol. 66, no. 1-4, pp. 683–687, 2003
  55. High quality silicon-based PZT thin films for memory applications
    Microelectronic Engineering, vol. 66, no. 1-4, pp. 713–718, 2003
  56. A novel piezoelectric-based RF BAW filter
    Microelectronic Engineering, vol. 66, no. 1-4, pp. 779–784, 2003
  57. A novel NO/sub 2/ gas sensor based on bis[phthalocyaninato] samarium complex/silicon hybrid charge-flow transistor
    IEEE Sensors Journal, vol. 3, no. 6, pp. 796–800, 2003
  58. Fabrication of a Cantilever Structure for Piezoelectric Microphone
    Japanese Journal of Applied Physics, vol. 41, no. Part 1, No. 11B, pp. 7158–7159, 2002
  59. Characterization of Mn-Doped Ba1-xSrxTiO3 Thin Films Prepared by the Sol-Gel Method
    Chinese Physics Letters, vol. 19, no. 11, pp. 1724–1726, 2002
  60. Chinese Physics Letters, vol. 19, no. 3, pp. 432–433, 2002
  61. RF-MEMS BAW Filter Using Surface Micromachining
    Integrated Ferroelectrics, vol. 50, no. 1, pp. 71–79, 2002
  62. Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method
    Journal of Physics D: Applied Physics, vol. 35, no. 9, pp. 923–926, 2002
  63. Synthesis of Cu-modified Co2Z hexaferrite with planar structure by a citrate precursor method
    Journal of Magnetism and Magnetic Materials, vol. 234, no. 2, pp. 255–260, 2001
  64. Chinese Physics Letters, vol. 18, no. 1, pp. 132–133, 2000
  65. Journal of Physics D: Applied Physics, vol. 33, no. 15, pp. L77–L79, 2000
  66. Experimental earliness/tardiness production planning with the due window system
    Production Planning & Control, vol. 10, no. 6, pp. 553–558, 1999
  67. Preparation and magnetic properties of BaZn2-xCoxFe16O27 nanocrystalline powders
    Journal of Magnetism and Magnetic Materials, vol. 184, no. 1, pp. 95–100, 1998