Articles in Scholarly Journals [Incomplete List]

1. Unipolar SiC power devices and elevated temperature
   Microelectronic Engineering, vol. 83, no. 1, pp. 181–184, 2006
2. SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS
   International Journal of High Speed Electronics and Systems, vol. 16, no. 3, p. 825, 2006
3. Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
   Applied Physics Letters, vol. 80, no. 22, p. 4253, 2002
4. Detailed investigation of n-channel enhancement 6H-SiC MOSFETs
   IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 533–541, 1999
5. An 1800 V triple implanted vertical 6H-SiC MOSFET
   IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 542–545, 1999
6. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
   IEEE Electron Device Letters, vol. 20, no. 5, pp. 241–244, 1999
7. Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide
   Microelectronic Engineering, vol. 48, no. 1-4, pp. 253–256, 1999
8. Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide
   Journal of Applied Physics, vol. 84, no. 5, p. 2943, 1998
9. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
   Applied Physics Letters, vol. 71, no. 20, p. 2996, 1997
10. Interface properties of MOS structures on n-type 6H_SiC
    Solid-State Electronics, vol. 41, no. 7, pp. 991–994, 1997
11. Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC
    Journal of Applied Physics, vol. 79, no. 10, p. 7814, 1996