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Articles in Scholarly Journals [Incomplete List]

1. Thermal stability of Gd2O3/Si(100) interfacial transition layer
   Journal de Physique IV (Proceedings), vol. 132, no. 1, pp. 273–277, 2006
2. Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
   IEICE Transactions on Electronics, vol. E89-C, no. 5, pp. 596–601, 2006
3. Electrical properties of vacuum annealed LaO thin films grown by E-beam evaporation
   Microelectronics Journal, vol. 36, no. 1, pp. 41–49, 2005
4. Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications
   IEICE Transactions on Electronics, vol. E88-C, no. 4, pp. 656–661, 2005
5. Space-Charge-Limited Currents in La2O3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
   Japanese Journal of Applied Physics, vol. 44, no. No. 6A, pp. 4032–4042, 2005
6. New method of Plasma doping with in-situ Helium pre-amorphization
   Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 237, no. 1-2, pp. 41–45, 2005
7. Ultra shallow p/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation
   Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 237, no. 1-2, pp. 58–61, 2005
8. Separation by bonding Si Islands (SBSI) for LSI applications
   Materials Science in Semiconductor Processing, vol. 8, no. 1-3, pp. 59–63, 2005
9. Effects of low temperature annealing on the ultrathin LaO gate dielectric; comparison of post deposition annealing and post metallization annealing
   Microelectronic Engineering, vol. 80, pp. 206–209, 2005
10. Analysis of variation in leakage currents of Lanthana thin films
    Solid-State Electronics, vol. 49, no. 5, pp. 825–833, 2005
11. Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
    Japanese Journal of Applied Physics, vol. 44, no. No. 2, pp. 1045–1051, 2005
12. Dry Etching of Cr2O3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
    Japanese Journal of Applied Physics, vol. 44, no. No. 1A, pp. 114–117, 2005
13. Electrical Characteristics for Lu[sub 2]O[sub 3] Thin Films Fabricated by E-Beam Deposition Method
    Journal of The Electrochemical Society, vol. 151, no. 4, p. G279, 2004
14. Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy2O3/Si(100) Diode Characteristics
    Japanese Journal of Applied Physics, vol. 43, no. No. 4B, pp. 1873–1878, 2004
15. Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers
    Applied Surface Science, vol. 224, no. 1-4, pp. 270–273, 2004
16. Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer
    Microelectronic Engineering, vol. 72, no. 1-4, pp. 283–287, 2004
17. Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer
    Applied Surface Science, vol. 234, no. 1-4, pp. 493–496, 2004
18. Characterization of La[sub 2]O[sub 3] and Yb[sub 2]O[sub 3] Thin Films for High-k Gate Insulator Application
    Journal of The Electrochemical Society, vol. 150, no. 7, p. F134, 2003
19. Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
    Applied Surface Science, vol. 216, no. 1-4, pp. 302–306, 2003
20. Chemical and electronic structures of Lu2O3/Si interfacial transition layer
    Applied Surface Science, vol. 216, no. 1-4, pp. 234–238, 2003
21. NiSi salicide technology for scaled CMOS
    Microelectronic Engineering, vol. 60, no. 1-2, pp. 157–169, 2002
22. Silicon integrated circuit technology from past to future
    Microelectronics Reliability, vol. 42, no. 4-5, pp. 465–491, 2002
23. Epitaxial silicide interfaces in microelectronics
    Thin Solid Films, vol. 369, no. 1-2, pp. 233–239, 2000
24. Effect of ultrathin Mo and MoSi[sub x] layer on Ti silicide reaction
    Journal of Applied Physics, vol. 86, no. 7, p. 3655, 1999
25. Silicide formation in co-deposited TiSix layers: The effect of deposition temperature and Mo
    Journal of Electronic Materials, vol. 28, no. 10, pp. 1115–1122, 1999
26. Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer
    Applied Surface Science, vol. 117-118, pp. 418–422, 1997
27. Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs(100) high-electron-mobility transistor structures
    Journal of Crystal Growth, vol. 150, pp. 1104–1107, 1995