Tseung Yuen Tseng

Articles in Scholarly Journals [Incomplete List]

  1. Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
    Journal of Materials Science: Materials in Electronics, 2008
  2. The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method
    Journal of Materials Science: Materials in Electronics, 2008
  3. Effect of ZnO seed layers on the solution chemical growth of ZnO nanorod arrays
    Ceramics International, 2008
  4. Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
    Surface and Coatings Technology, 2008
  5. Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
    Surface and Coatings Technology, 2008
  6. Effects of Preparation Conditions on the Growth of ZnO Nanorod Arrays Using Aqueous Solution Method
    International Journal of Applied Ceramic Technology, vol. 5, no. 5, pp. 419–429, 2008
  7. Formation of Mo Silicide Nanodot Memory by Rapid Thermal Annealing Dual Electron-Gun Evaporated Mo–Si Layer
    Electrochemical and Solid-State Letters, vol. 11, no. 7, p. H202, 2008
  8. Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films
    Journal of The Electrochemical Society, vol. 155, no. 8, p. H615, 2008
  9. Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films
    Journal of The Electrochemical Society, vol. 154, no. 9, p. G189, 2007
  10. Resistive Switching Properties of SrZrO 3 -Based Memory Films
    Japanese Journal of Applied Physics, vol. 46, no. No. 4B, pp. 2153–2156, 2007
  11. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices
    IEEE Electron Device Letters, vol. 28, no. 5, pp. 366–368, 2007
  12. IEEE Transactions on Electron Devices, vol. 54, no. 12, pp. 3146–3151, 2007
  13. Modified resistive switching behavior of ZrO[sub 2] memory films based on the interface layer formed by using Ti top electrode
    Journal of Applied Physics, vol. 102, no. 9, p. 094101, 2007
  14. Phase transition and piezoelectric property of (Bi[sub 0.5]Na[sub 0.5])[sub 0.94]Ba[sub 0.06]Zr[sub y]Ti[sub 1−y]O[sub 3](y=0–0.04) ceramics
    Journal of Applied Physics, vol. 102, no. 9, p. 094102, 2007
  15. Resistance switching properties of sol–gel derived SrZrO 3 based memory thin films
    Journal of Physics D: Applied Physics, vol. 40, no. 7, pp. 2157–2161, 2007
  16. Resistive switching properties of sol–gel derived Mo-doped SrZrO3 thin films
    Surface and Coatings Technology, vol. 202, no. 4-7, pp. 1319–1322, 2007
  17. SrTiO3–SiO2 oxide films for possible high-k gate dielectric applications
    Thin Solid Films, vol. 515, no. 20-21, pp. 8005–8008, 2007
  18. Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
    Thin Solid Films, vol. 516, no. 2-4, pp. 402–406, 2007
  19. Memory effect of RF sputtered ZrO2 thin films
    Thin Solid Films, vol. 516, no. 2-4, pp. 444–448, 2007
  20. Well-Aligned Ternary Cd1-xZnxS Nanowire Arrays and Their Composition-Dependent Field Emission Properties
    Journal of Physical Chemistry C, vol. 111, no. 36, pp. 13418–13426, 2007
  21. Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films
    Thin Solid Films, vol. 515, no. 3, pp. 872–875, 2006
  22. Memory effect of sol–gel derived V-doped SrZrO thin films
    Thin Solid Films, vol. 494, no. 1-2, pp. 287–290, 2006
  23. Effect of phosphorus dopant on photoluminescence and field-emission characteristics of Mg[sub 0.1]Zn[sub 0.9]O nanowires
    Journal of Applied Physics, vol. 99, no. 2, p. 024303, 2006
  24. Electrical properties of resistance switching V-doped SrZrO 3 films on textured LaNiO 3 bottom electrodes
    Journal of Physics D: Applied Physics, vol. 39, no. 6, pp. 1156–1160, 2006
  25. IEEE Electron Device Letters, vol. 27, no. 9, pp. 725–727, 2006
  26. Gate-controlled ZnO nanowires for field-emission device application
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 1, p. 147, 2006
  27. Field-Emission Triode of Low-Temperature Synthesized ZnO Nanowires
    IEEE Transactions On Nanotechnology, vol. 5, no. 3, pp. 216–219, 2006
  28. IEEE Electron Device Letters, vol. 26, no. 6, pp. 351–353, 2005
  29. Low temperature synthesized Sn doped indium oxide nanowires
    Nanotechnology, vol. 16, no. 4, pp. 451–457, 2005
  30. Single-crystalline MgxZn1-xO (0=x=0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristics
    Nanotechnology, vol. 16, no. 8, pp. 1105–1111, 2005
  31. Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires
    Nanotechnology, vol. 17, no. 1, pp. 83–88, 2005
  32. Dielectric and electrical properties of SrTiO (3 ± y ) –(SiO 2 ) x thin films
    Journal of Physics D: Applied Physics, vol. 38, no. 14, pp. 2446–2451, 2005
  33. ZnO Nanowires Hydrothermally Grown on PET Polymer Substrates and Their Characteristics
    Journal of Nanoscience and Nanotechnology, vol. 5, no. 7, pp. 1088–1094, 2005
  34. One-Dimensional Semiconductor Nanostructures as Absorber Layers in Solar Cells
    Journal of Nanoscience and Nanotechnology, vol. 5, no. 11, pp. 1768–1784, 2005
  35. Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films
    Journal of the American Ceramic Society, vol. 88, no. 9, pp. 2456–2460, 2005
  36. Characteristics and Electrochemical Performance of Supercapacitors with Manganese Oxide-Carbon Nanotube Nanocomposite Electrodes
    Journal of The Electrochemical Society, vol. 152, no. 4, p. A716, 2005
  37. Fabrication of Vertical ZnO Nanowires on Silicon (100) with Epitaxial ZnO Buffer Layer
    Journal of Nanoscience and Nanotechnology, vol. 4, no. 8, pp. 968–971, 2004
  38. Preferentially Oriented Ferroelectric Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] Thin Films on (110) BaRuO[sub 3]/Ru/SiO[sub 2]/Si Substrates
    Electrochemical and Solid-State Letters, vol. 7, no. 1, p. F1, 2004
  39. Pattern Profile Distortion and Stress Evolution in Nanoporous Organosilicates after Photoresist Stripping
    Electrochemical and Solid-State Letters, vol. 7, no. 2, p. F5, 2004
  40. Studies on Ferroelectric Properties of Sol-Gel Derived Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] Using Ba[sub 0.5]Sr[sub 0.5]RuO[sub 3] as the Conductive Electrodes
    Journal of The Electrochemical Society, vol. 151, no. 4, p. F87, 2004
  41. CMP of Low-k Methylsilsesquiazane with Oxygen Plasma Treatment for Multilevel Interconnect Applications
    Electrochemical and Solid-State Letters, vol. 7, no. 6, p. G122, 2004
  42. Effect of Sn dopant on the properties of ZnO nanowires
    Journal of Physics D: Applied Physics, vol. 37, no. 16, pp. 2274–2282, 2004
  43. Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process
    Journal of Applied Physics, vol. 95, no. 7, p. 3711, 2004
  44. Deep depletion phenomenon of SrTiO[sub 3] gate dielectric capacitor
    Journal of Applied Physics, vol. 95, no. 10, p. 5602, 2004
  45. Dielectric characteristics of nanocrystalline Ag–Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] composite thin films
    Applied Physics Letters, vol. 85, no. 7, p. 1211, 2004
  46. Electrical and dielectric behavior of fluorite-like Sr0.8Bi2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450°C
    Materials Chemistry and Physics, vol. 83, no. 2-3, pp. 345–349, 2004
  47. CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
    Thin Solid Films, vol. 447-448, pp. 524–530, 2004
  48. Investigation of the electrical properties and reliability of amorphous SiCN
    Thin Solid Films, vol. 447-448, pp. 632–637, 2004
  49. Study on etching profile of nanoporous silica
    Thin Solid Films, vol. 469-470, pp. 377–382, 2004
  50. Cu-penetration induced breakdown mechanism for a-SiCN
    Thin Solid Films, vol. 469-470, pp. 388–392, 2004
  51. Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
    Thin Solid Films, vol. 469-470, pp. 383–387, 2004
  52. Gardenia herbal active constituents: applicable separation procedures
    Journal of Chromatography B, vol. 812, no. 1-2, pp. 193–202, 2004
  53. Measurement of unbound geniposide in blood, liver, brain and bile of anesthetized rats: an application of pharmacokinetic study and its influence on acupuncture
    Analytica Chimica Acta, vol. 517, no. 1-2, pp. 47–52, 2004
  54. Correlation between deep depletion and current?voltage saturation of SrTiO3 gate dielectric capacitor
    Ceramics International, vol. 30, no. 7, pp. 1101–1106, 2004
  55. Effect of atmosphere on growth of single crystal zinc oxide nanowires
    Journal of Materials Science: Materials in Electronics, vol. 15, no. 8, pp. 505–510, 2004
  56. Electrical properties of sputter deposited SrTiO3 gate dielectrics
    Journal of the European Ceramic Society, vol. 24, no. 6, pp. 1449–1453, 2004
  57. Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
    Journal of the European Ceramic Society, vol. 24, no. 8, pp. 2471–2476, 2004
  58. Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide–alkoxide precursor-based sol–gel method
    Materials Chemistry and Physics, vol. 77, no. 1, pp. 34–42, 2003
  59. Electrical and dielectric properties of low-temperature crystallized Sr0.8Bi2.6Ta2O9+x thin films on Ir/SiO2/Si substrates
    Materials Chemistry and Physics, vol. 82, no. 3, pp. 826–830, 2003
  60. Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor–liquid–solid process
    Journal of Crystal Growth, vol. 247, no. 3-4, pp. 357–362, 2003
  61. Improvement in retention time of metal–ferroelectric–metal– insulator–semiconductor structures using MgO doped Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] insulator layer
    Applied Physics Letters, vol. 83, no. 5, p. 981, 2003
  62. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 50, no. 1, pp. 5–14, 2003
  63. Moisture-Induced Material Instability of Porous Organosilicate Glass
    Electrochemical and Solid-State Letters, vol. 6, no. 4, p. F13, 2003
  64. Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology
    Electrochemical and Solid-State Letters, vol. 6, no. 5, p. G69, 2003
  65. Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology [Electrochemical and Solid-State Letters, 6, G69 (2003)]
    Electrochemical and Solid-State Letters, vol. 6, no. 7, p. L3, 2003
  66. An improved two-frequency method of capacitance measurement for SrTiO/sub 3/ as high-k gate dielectric
    IEEE Electron Device Letters, vol. 23, no. 9, pp. 553–555, 2002
  67. Microwave penetration depth measurement for high T/sub c/ superconductors by dielectric resonators
    IEEE Transactions on Instrumentation and Measurement, vol. 51, no. 3, pp. 433–439, 2002
  68. Device modeling of ferroelectric memory field-effect transistor (FeMFET)
    IEEE Transactions on Electron Devices, vol. 49, no. 10, pp. 1790–1798, 2002
  69. Dielectric tunability of barium strontium titanate films prepared by a sol–gel method
    Thin Solid Films, vol. 408, no. 1-2, pp. 194–199, 2002
  70. Characterization of porous silicate for ultra-low k dielectric application
    Thin Solid Films, vol. 414, no. 1, pp. 1–6, 2002
  71. Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
    Thin Solid Films, vol. 420-421, pp. 377–381, 2002
  72. The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
    Thin Solid Films, vol. 420-421, pp. 403–407, 2002
  73. Identification and determination of geniposide contained in Gardenia jasminoides and in two preparations of mixed traditional Chinese medicines
    Journal of Chromatography A, vol. 961, no. 1, pp. 83–88, 2002
  74. A model of non-homogeneous damped electromagnetic wave and heat equation in ferrite materials
    Journal of Magnetism and Magnetic Materials, vol. 239, no. 1-3, pp. 402–405, 2002
  75. Journal of Materials Science: Materials in Electronics, vol. 13, no. 8, pp. 439–459, 2002
  76. Electrical and dielectric behavior of MgO doped Ba [sub 0.7]Sr[sub 0.3]TiO[sub 3] thin films on Al[sub 2] O[sub 3] substrate
    Applied Physics Letters, vol. 80, no. 10, p. 1797, 2002
  77. A method to characterize the dielectric and interfacial properties of metal–insulator-semiconductor structures by microwave measurement
    Journal of Applied Physics, vol. 91, no. 8, p. 5275, 2002
  78. Enhanced ferroelectric properties of Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3] thin films on SrRuO[sub 3]/Ru/SiO[sub 2]/Si substrates
    Applied Physics Letters, vol. 80, no. 20, p. 3790, 2002
  79. Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] thin films
    Journal of Applied Physics, vol. 92, no. 4, p. 1868, 2002
  80. Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO[sub 3] gate dielectrics
    Applied Physics Letters, vol. 81, no. 23, p. 4416, 2002
  81. Application of on-wafer TRL calibration on the measurement of microwave properties of Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ films
    IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 48, no. 6, pp. 1640–1647, 2001
  82. Effect of bottom electrodes on resistance degradation and breakdown of (Ba,Sr)TiO/sub 3/ thin films
    IEEE Transactions on Components and Packaging Technologies, vol. 23, no. 1, pp. 128–135, 2000
  83. Journal of Physics D: Applied Physics, vol. 33, no. 10, pp. 1137–1142, 2000
  84. Journal of Materials Science: Materials in Electronics, vol. 11, no. 2, pp. 157–162, 2000
  85. Surface modification of Dy2O3–Nb2O5 dope mix for dielectric materials in aqueous dispersion
    Journal of the European Ceramic Society, vol. 20, no. 7, pp. 977–982, 2000
  86. Sintering BaTi4O9/Ba2Ti9O20-based ceramics by glass addition
    Journal of the European Ceramic Society, vol. 20, no. 8, pp. 1061–1067, 2000
  87. Study of linear and nonlinear optical properties of distorted Ti–O6 perovskite structure in BaxSr1-xTiO3
    Journal of Physics and Chemistry of Solids, vol. 61, no. 6, pp. 969–977, 2000
  88. The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films
    Thin Solid Films, vol. 372, no. 1-2, pp. 190–199, 2000
  89. Electrical properties of Ta2O5 thin films deposited on Cu
    Thin Solid Films, vol. 360, no. 1-2, pp. 268–273, 2000
  90. Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
    Materials Chemistry and Physics, vol. 65, no. 3, pp. 227–248, 2000
  91. Preparation of aluminum film on phosphor screen for field emission display
    Materials Chemistry and Physics, vol. 61, no. 2, pp. 166–168, 1999
  92. Structure-related optical properties of rapid thermally annealed Ba0.7Sr0.3TiO3 thin films
    Materials Chemistry and Physics, vol. 61, no. 3, pp. 244–250, 1999
  93. Journal of Materials Science, vol. 34, no. 18, pp. 4573–4578, 1999
  94. Analysis of AC electrical response for radio-frequency sputtered (BaSr)TiO thin film
    Thin Solid Films, vol. 346, no. 1-2, pp. 269–274, 1999
  95. Journal of Materials Science: Materials in Electronics, vol. 10, no. 1, pp. 9–31, 1999
  96. Journal of Physics D: Applied Physics, vol. 32, no. 17, pp. 2141–2145, 1999
  97. Journal of Physics D: Applied Physics, vol. 32, no. 4, pp. 513–517, 1999
  98. Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO/sub 3/ capacitors
    IEEE Transactions on Electron Devices, vol. 46, no. 9, pp. 1829–1838, 1999
  99. Electrical properties of Ta[sub 2]O[sub 5] thin films deposited on Ta
    Applied Physics Letters, vol. 74, no. 17, p. 2477, 1999
  100. Effect of bismuth content on the properties of Sr[sub 0.8]Bi[sub x]Ta[sub 1.2]Nb[sub 0.9]O[sub 9+y] ferroelectric thin films
    Journal of Applied Physics, vol. 85, no. 2, p. 1095, 1999
  101. (Ba,Sr)TiO3 thin films: Preparation, properties and reliability
    Ferroelectrics, vol. 232, pp. 1–13, 1999
  102. Mixing macro and micro flowtime estimation model: wafer fab example
    International Journal of Production Research, vol. 37, no. 11, pp. 2447–2461, 1999
  103. Electrical Properties of Rapid Thermal-Enhanced Low Pressure Chemical Vapor Deposited Ta[sub 2]O[sub 5] Thin Films
    Electrochemical and Solid-State Letters, vol. 2, no. 3, p. 135, 1999
  104. Ba(Ti[sub 0.8]Sn[sub 0.2])O[sub 3] Thin Films Prepared by Radio-Frequency Magnetron Sputtering for Dynamic Random Access Memory Applications
    Electrochemical and Solid-State Letters, vol. 2, no. 5, p. 236, 1999
  105. Promotion of phase transformation and single-phase formation in silver-doped Tl–Ba–Ca–Cu–O superconducting thin films
    Journal of Materials Research, vol. 14, no. 5, Article ID 1999.0234, 4 pages, 1999
  106. Conduction Mechanism and Temperature-Dependent Current-Voltage in (Ba, Sr)TiO[sub 3] Thin Films
    Journal of The Electrochemical Society, vol. 145, no. 8, p. 2853, 1998
  107. Electrical properties of O2 and N2 annealed (Ba, Sr)TiO3 thin films
    Integrated Ferroelectrics, vol. 21, no. 1, pp. 173–183, 1998
  108. Conduction mechanisms in amorphous and crystalline Ta[sub 2]O[sub 5] thin films
    Journal of Applied Physics, vol. 83, no. 9, p. 4797, 1998
  109. Journal of Materials Science Materials in Electronics, vol. 9, no. 1, pp. 65–76, 1998
  110. Sr[sub 0.8]Bi[sub 2.5]Ta[sub 1.2]Nb[sub 0.9]O[sub 9+x] ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering
    Applied Physics Letters, vol. 72, no. 14, p. 1787, 1998
  111. Electrical characteristics of (Pb,Sr)TiO positive temperature coefficient ceramics
    Materials Chemistry and Physics, vol. 53, no. 2, pp. 132–137, 1998
  112. Phase development and activation energy of the YO-AlO system by a modified sol-gel process
    Materials Chemistry and Physics, vol. 56, no. 1, pp. 56–62, 1998
  113. Preparation and characteristics of Bi-Pb-Sr-Ca-Cu-O superconducting films by spray pyrolysis and post-annealing
    Materials Chemistry and Physics, vol. 56, no. 3, pp. 226–235, 1998
  114. Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
    Materials Chemistry and Physics, vol. 57, no. 1, pp. 47–56, 1998
  115. Effect of LiCl on the crystallization behavior and luminescence of Y3Al5O12:Tb
    Materials Chemistry and Physics, vol. 57, no. 1, pp. 95–98, 1998
  116. Resistive response to a microwave field in high temperature superconducting crystals
    Materials Chemistry and Physics, vol. 48, no. 1, pp. 94–99, 1997
  117. Off-axis unbalanced magnetron sputtering of YBaCuO thin films
    Materials Chemistry and Physics, vol. 49, no. 3, pp. 229–233, 1997
  118. Microwave properties of YBa2Cu3O7$minus;x deposited on MgO substrates
    Physica C: Superconductivity, vol. 282-287, pp. 1573–1574, 1997
  119. Journal of Materials Science Materials in Electronics, vol. 8, no. 5, pp. 313–320, 1997
  120. Journal of Materials Science Materials in Electronics, vol. 8, no. 2, pp. 115–123, 1997
  121. Characterization of yttria-stabilized zirconia thin films grown by planar magnetron sputtering
    Thin Solid Films, vol. 306, no. 1, pp. 86–91, 1997
  122. Electronic defect and trap-related current of (Ba[sub 0.4]Sr[sub 0.6])TiO[sub 3] thin films
    Journal of Applied Physics, vol. 81, no. 10, p. 6762, 1997
  123. Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO[sub 3] thin films prepared by radio-frequency magnetron sputtering
    Journal of Applied Physics, vol. 82, no. 7, p. 3482, 1997
  124. Effective microwave surface impedance of superconducting films in the mixed state
    IEEE Transactions on Magnetics, vol. 33, no. 3, pp. 2348–2355, 1997
  125. Resonant Rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering
    IEEE Transactions on Appiled Superconductivity, vol. 7, no. 2, pp. 1403–1406, 1997
  126. Grain-boundary surface states of (Ba,Pb)TiO/sub 3/ positive temperature coefficient ceramics doped with different additives and its influence on electrical properties
    IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, vol. 19, no. 3, pp. 423–430, 1996
  127. Microwave surface impedances of BCS superconducting thin films
    IEEE Transactions on Appiled Superconductivity, vol. 6, no. 2, pp. 94–101, 1996
  128. AC permeability of the flux-line liquid in the anisotropic high-T/sub c/ superconducting crystals
    IEEE Transactions on Appiled Superconductivity, vol. 6, no. 3, pp. 147–154, 1996
  129. Microstructure and Crystal Phases of Praseodymium Oxides in Zinc Oxide Varistor Ceramics
    Journal of the American Ceramic Society, vol. 79, no. 9, pp. 2379–2384, 1996
  130. Microwave response of superconducting platelet crystals
    Physical Review B, vol. 54, no. 1, pp. 488–496, 1996
  131. Interaction between a two-dimensional pancake vortex and a circular nonsuperconducting defect
    Physical Review B, vol. 54, no. 1, pp. 502–506, 1996
  132. High-frequency vortex response of anisotropic type-II superconductors
    Physical Review B, vol. 54, no. 1, pp. 665–674, 1996
  133. Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7-x as an intermediate layer
    Journal of Applied Physics, vol. 79, no. 10, p. 7621, 1996
  134. Preparation and characterization of PLZT thin films by sol-gel processing
    Journal of Materials Science, vol. 31, no. 23, pp. 6361–6368, 1996
  135. Spectroscopic study of the microwave plasma enhanced pulsed laser deposition for Y1Ba2Cu3O7-x superconducting thin films
    Applied Surface Science, vol. 96-98, pp. 233–237, 1996
  136. Mirror-smooth YBa2Cu3O7-x superconducting films deposited by plasma-enhanced pulsed laser deposition technique
    Applied Surface Science, vol. 96-98, pp. 735–738, 1996
  137. Vortex response to the ac field in anisotropic high-Tc superconductors
    Physica C: Superconductivity, vol. 259, no. 1-2, pp. 61–68, 1996
  138. On the off stoichiometry of cerium oxide thin films deposited by RF sputtering
    Physica C: Superconductivity, vol. 260, no. 1-2, pp. 86–92, 1996
  139. The interaction between a single vortex and a columnar defect in the superconducting multilayers
    Physica C: Superconductivity, vol. 269, no. 3-4, pp. 330–338, 1996
  140. Degradation phenomena of multilayer ZnO–glass varistors studied by deep level transient spectroscopy
    Applied Physics Letters, vol. 69, no. 12, p. 1807, 1996
  141. Characteristic analysis of ZnO varistors made with spherical precipitation powders
    Materials Chemistry and Physics, vol. 41, no. 2, pp. 104–109, 1995
  142. Influence of processing parameters on the microstructure and electrical properties of multilayer-chip ZnO varistors
    Journal of Materials Science: Materials in Electronics, vol. 6, no. 2, 1995
  143. Optical properties of ZrTiO4 films grown by radio-frequency magnetron sputtering
    Journal of Applied Physics, vol. 77, no. 9, p. 4445, 1995
  144. Effects of oxygen-argon mixing on the electrical and physical properties of ZrTiO4 films sputtered on silicon at low temperature
    Journal of Applied Physics, vol. 78, no. 12, p. 7103, 1995
  145. Degradation Phenomena Due to Impulse-Current in Zinc Oxide Varistors
    Journal of the American Ceramic Society, vol. 78, no. 10, pp. 2685–2689, 1995
  146. Analysis of the AC electrical response for (Ba,Pb)TiO/sub 3/ positive temperature coefficient ceramics
    IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, vol. 17, no. 2, pp. 309–315, 1994
  147. Electrical Properties of Multilayer-Chip ZnO Varistors in a Moist-Air Environment
    Journal of the American Ceramic Society, vol. 77, no. 11, pp. 3006–3011, 1994
  148. Investigation of Resistivity and Permittivity for (Ba,Pb)TiO3 PTCR Ceramics
    Journal of the American Ceramic Society, vol. 77, no. 9, pp. 2419–2424, 1994
  149. Effect of Soaking Time on the Temperature Coefficient of Resistivity of Semiconducting Barium Titanate PTCR Ceramics
    Journal of the American Ceramic Society, vol. 77, no. 9, pp. 2461–2464, 1994
  150. Preparation and Characterization of Tl-Ba-Ca-Cu-O Superconducting Films by Spray Pyrolysis and Tl-Diffusion Technique
    Journal of the American Ceramic Society, vol. 77, no. 1, pp. 27–32, 1994
  151. Growth of highly oriented ZrTiO4 thin films by radio-frequency magnetron sputtering
    Applied Physics Letters, vol. 64, no. 24, p. 3252, 1994
  152. The role of drying-control chemical additives on the preparation of sol-gel derived PLZT thin films
    Journal of Materials Science, vol. 28, no. 24, pp. 6691–6698, 1993
  153. Influence of sintering profile on the resistivity of low-Curie-point PTCR ceramics
    Materials Letters, vol. 17, no. 3-4, pp. 141–145, 1993
  154. Preparation and ac Electrical Response Analysis for (Ba,Pb)TiO3 PTCR Ceramics
    Journal of the American Ceramic Society, vol. 76, no. 3, pp. 781–784, 1993
  155. Calculations and modeling of grain-boundary acceptor states for (Ba,Pb)TiO3 positive temperature coefficient ceramics
    Journal of Applied Physics, vol. 74, no. 5, p. 3383, 1993
  156. Influence of sintering temperature on electrical properties of ZnO varistors
    Journal of Applied Physics, vol. 74, no. 1, p. 695, 1993
  157. Study of loss mechanisms of Mn-Zn ferrites in the frequency from 1 MHz to 10 MHz
    IEEE Transactions on Magnetics, vol. 29, no. 6, pp. 3526–3528, 1993
  158. The effect of grain boundaries on the electrical properties of zinc oxide-based varistor
    Journal of Electronic Materials, vol. 21, no. 11, pp. 1073–1079, 1992
  159. Bolometric YBa2Cu3O7−x infra-red detector
    Electronics Letters, vol. 27, no. 19, p. 1724, 1991
  160. Formation of High-Tc Superconducting Bi-Pb-Sr-Ca-Cu Oxide Films by Spray Pyrolysis of an Oxalate Suspension
    Journal of the American Ceramic Society, vol. 73, no. 4, pp. 889–892, 1990
  161. Electrical Properties of TiO2-K2Ti6O13 Porous Ceramic Humidity Sensor
    Journal of the American Ceramic Society, vol. 73, no. 7, pp. 1992–1998, 1990
  162. Electrical Properties of Porous Titania Ceramic Humidity Sensors
    Journal of the American Ceramic Society, vol. 72, no. 8, pp. 1472–1475, 1989
  163. Microstructure and properties of Ni-Zn ferrites sintered from slip cast colloidally precipitated particles
    IEEE Transactions on Magnetics, vol. 25, no. 6, pp. 4405–4408, 1989
  164. Electrical properties of K/sub 2/O-doped Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ ceramic humidity sensor
    IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 12, no. 2, pp. 259–266, 1989
  165. Preparation of SiO 2 Glass from Model Powder Compacts: I, Formation and Characterization of Powders, Suspensions, and Green Compacts
    Journal of the American Ceramic Society, vol. 67, no. 8, pp. 526–532, 1984
  166. Preparation of SiO 2 Glass from Model Powder Compacts: II, Sintering
    Journal of the American Ceramic Society, vol. 67, no. 8, pp. 532–537, 1984
  167. Role of Sodium Citrate in Aqueous Milling of Aluminum Oxide
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