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Seshu Babu Desu
Binghamton University, USA
Articles in Scholarly Journals [Incomplete List]
Nano crystalline porous silicon as large-area electrode for electrochemical synthesis of polypyrrole
Physica B: Condensed Matter, vol. 388, no. 1-2, pp. 344–349, 2007
Characterization of low pressure chemical vapor deposited polymeric fluorinated carbon m (C:FX)n thin films with low dielectric constant
Applied Physics A, vol. 83, no. 1, pp. 57–66, 2006
Thermal chemical vapor deposition of fluorocarbon polymer thin films in a hot filament reactor
Polymer, vol. 46, no. 10, pp. 3440–3451, 2005
Effect of Strain Gradation on Luminescence and Electronic Properties of Pulsed Laser Deposited Zinc Oxide Thin Films
Journal of Electroceramics, vol. 13, no. 1-3, pp. 345–352, 2004
Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices
Journal of Electroceramics, vol. 13, no. 1-3, pp. 121–127, 2004
Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application
Journal of Applied Physics, vol. 96, no. 10, p. 5673, 2004
The Enhanced Dielectric and Insulating Properties of Al2O3 Modified Ta2O5 Thin Films
Journal of Electroceramics, vol. 10, no. 3, pp. 209–214, 2003
Phase transition behavior of highly (100) textured sol-gel-derived Ba 0.5 Sr 0.5 TiO 3 thin films
Applied Physics A: Materials Science & Processing, vol. 77, no. 6, pp. 789–792, 2003
Ferroelectric properties of laser-ablated Sr[sub 1-x]A[sub x]Bi[sub 2]Ta[sub 2]O[sub 9] thin films (where A=Ba, Ca)
Applied Physics Letters, vol. 80, no. 4, p. 637, 2002
Studies on Laser Ablated SrBi 2 Ta 2 O 9 and Sr 0.8 Ca 0.2 Bi 2 Ta 2 O 9 Ferroelectric Thin Films
Integrated Ferroelectrics, vol. 42, no. 1, pp. 305–311, 2002
Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti)O3-based high-density nonvolatile ferroelectric memories
Current Applied Physics, vol. 1, no. 4-5, pp. 379–384, 2001
Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories
physica status solidi (a), vol. 184, no. 2, pp. 273–289, 2001
Compositional studies of near-room-temperature thermal CVD poly(chloro-p-xylylene)/SiO 2 nanocomposites
Applied Physics A: Materials Science & Processing, vol. 70, no. 5, pp. 541–546, 2000
Role of bismuth precursor in crystallization of SrBi 2 Ta 2 O 9 thin films
Applied Physics A: Materials Science & Processing, vol. 70, no. 3, pp. 253–259, 2000
Temperature studies of optical birefringence and X-ray diffraction with poly(p-xylylene), poly(chloro-p-xylylene) and poly(tetrafluoro-p-xylylene) CVD thin films
Polymer, vol. 41, no. 7, pp. 2379–2390, 2000
Brookite-rich titania films made by pulsed laser deposition
Thin Solid Films, vol. 366, no. 1-2, pp. 8–10, 2000
Journal of Electroceramics, vol. 5, no. 1, pp. 7–20, 2000
Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9 - Bi3TiNbO9 thin films
Integrated Ferroelectrics, vol. 29, no. 1, pp. 33–41, 2000
Supression of size effects in ferroelectric films
Integrated Ferroelectrics, vol. 28, no. 1, pp. 175–192, 2000
Journal of Physics: Condensed Matter, vol. 9, no. 46, pp. 10225–10235, 1999
Improvement in the electrical properties in Pt/Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3]/Pt ferroelectric capacitors using a wet cleaning method
Journal of Applied Physics, vol. 86, no. 11, p. 6376, 1999
Highly c-axis oriented Pb(Zr,?Ti)O[sub 3] thin films grown on Ir electrode barrier and their electrical properties
Applied Physics Letters, vol. 74, no. 10, p. 1484, 1999
Plasma-assisted pulsed laser deposition of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films of improved ferroelectric and crystalline properties
Applied Physics Letters, vol. 74, no. 23, p. 3492, 1999
Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr[sub 0.53]Ti[sub 0.47])O[sub 3]/Pt ferroelectric capacitor
Applied Physics Letters, vol. 75, no. 3, p. 334, 1999
Thickness dependence of leakage current in BaBi[sub 2]Ta[sub 2]O[sub 9] thin films
Applied Physics Letters, vol. 75, no. 4, p. 552, 1999
Low temperature processed 0.7SrBi[sub 2]Ta[sub 2]O[sub 9]–0.3Bi[sub 3]TaTiO[sub 9] thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories
Applied Physics Letters, vol. 75, no. 14, p. 2126, 1999
Chemistry of Materials, vol. 11, no. 7, pp. 1814–1821, 1999
Fabrication and characterization of (1-x)SrBi2Ta2O9–xBi3TaTiO9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications
Thin Solid Films, vol. 340, no. 1-2, pp. 53–61, 1999
Morphology of poly(chloro-p-xylylene) CVD thin films
Polymer, vol. 40, no. 21, pp. 5751–5759, 1999
La(1-x)SrxCoO3 for thin film thermocouple applications
Thin Solid Films, vol. 350, no. 1-2, pp. 249–257, 1999
Stresses in sputtered RUOx thin films
Thin Solid Films, vol. 350, no. 1-2, pp. 21–29, 1999
Thin film TiC/TaC thermocouples
Thin Solid Films, vol. 342, no. 1-2, pp. 214–220, 1999
Enhanced dielectric properties of modified Ta 2 O 5 thin films
Materials Research Innovations, vol. 2, no. 5, pp. 299–302, 1999
A low frequency Raman study of SrBi2Ta2O9-Bi3TiNbO9
Ferroelectrics Letters Section, vol. 25, no. 1, pp. 53–57, 1999
High Temperature Barrier Electrode Technology for High Density Ferroelectric Memories with Stacked Capacitor Structure
Journal of The Electrochemical Society, vol. 145, no. 7, p. 2563, 1998
Characterization of Ba0.6Sr0.4TiO3 thin films with Mg additive fabricated by Metalorganic decomposition technique
Integrated Ferroelectrics, vol. 19, no. 1, pp. 141–148, 1998
Optical Properties of SrBi2(Ta1—xNbx)2O9 Bulk Ceramics Characterized by Spectroscopic Ellipsometry
physica status solidi (a), vol. 167, no. 1, pp. 215–221, 1998
Ferroelectric SrBi2Ta2O9 Thin Films Deposited on Si(100) by Pulsed Laser Deposition
physica status solidi (a), vol. 165, no. 1, pp. 213–217, 1998
Near–Room Temperature Thermal CVD of SiO2 Films
Chemical Vapor Deposition, vol. 04, no. 03, pp. 92–94, 1998
Poly(tetraflouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer
Applied Physics Letters, vol. 72, no. 2, p. 258, 1998
Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr[sub 1-x]Ti[sub x])O[sub 3] thin films
Applied Physics Letters, vol. 72, no. 21, p. 2686, 1998
Properties of Ba(Mg[sub 1/3]Ta[sub 2/3])O[sub 3] thin films prepared by metalorganic solution deposition technique for microwave applications
Applied Physics Letters, vol. 73, no. 8, p. 1080, 1998
Poly(chloro-p-xylylene)/SiO2 multilayer thin films deposited near-room temperature by thermal CVD
Thin Solid Films, vol. 322, no. 1-2, pp. 148–157, 1998
Laser-assisted low temperature processing of Pb(Zr,?Ti)O[sub 3] thin film
Applied Physics Letters, vol. 73, no. 14, p. 1958, 1998
Size effects of 0.8SrBi[sub 2]Ta[sub 2]O[sub 9]–0.2Bi[sub 3]TiNbO[sub 9] thin films
Journal of Applied Physics, vol. 83, no. 3, p. 1610, 1998
Infrared activity in the Aurivillius layered ferroelectric SrBi_{2}Ta_{2}O_{9}
Physical Review B, vol. 57, no. 10, pp. 5715–5723, 1998
Highly oriented ferroelectric CaBi[sub 2]Nb[sub 2]O[sub 9] thin films deposited on Si(100) by pulsed laser deposition
Applied Physics Letters, vol. 70, no. 11, p. 1393, 1997
Thin films of layered-structure (1-x)SrBi[sub 2]Ta[sub 2]O[sub 9]-xBi[sub 3]Ti(Ta[sub 1-y]Nb[sub y])O[sub 9] solid solution for ferroelectric random access memory devices
Applied Physics Letters, vol. 71, no. 8, p. 1041, 1997
Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories
Applied Physics Letters, vol. 71, no. 5, p. 719, 1997
Structural and electrical properties of crystalline (1-x)Ta[sub 2]O[sub 5]–xAl[sub 2]O[sub 3] thin films fabricated by metalorganic solution deposition technique
Applied Physics Letters, vol. 71, no. 10, p. 1341, 1997
Structural, electrical, and optical studies on rapid thermally processed ferroelectric BaTiO3 thin films prepared by metallo-organic solution deposition technique
Thin Solid Films, vol. 300, no. 1-2, pp. 289–294, 1997
Solid Solution in the SrBi2Ta2O9–Bi3TiNbO9 System
physica status solidi (a), vol. 160, no. 1, pp. 35–47, 1997
Structural and Electrical Properties of Oriented Ferroelectric CaBi2Nb2O9 Thin Films Deposited on n+-Si(100) by Pulsed Laser Deposition
physica status solidi (a), vol. 161, no. 2, pp. 371–378, 1997
Microstructural and Electrical Characteristics of Rapid Thermally Processed (Ba1—xSrx)TiO3 Thin Films Prepared by Metalorganic Solution Deposition Technique
physica status solidi (a), vol. 161, no. 2, pp. 361–370, 1997
Reactive Ion Etching of RuO2 Films: The Role of Additive Gases in O2 Discharge
physica status solidi (a), vol. 161, no. 1, pp. 201–215, 1997
Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films prepared by a modified metalorganic solution deposition technique
Applied Physics Letters, vol. 70, no. 9, p. 1080, 1997
Processing of PbTiO3 thin films. III. Effects of ion bombardment
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 14, no. 1, p. 13, 1996
Processing of PbTiO3 thin films. I. In situ investigation of formation kinetics
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 14, no. 1, p. 1, 1996
Thin films of novel ferroelectric composites
Integrated Ferroelectrics, vol. 13, no. 4, pp. 239–245, 1996
Formation and properties of SrBi2Ta2O9 thin films
Physica Status Solidi (a), vol. 157, no. 1, pp. 75–82, 1996
Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
Applied Physics Letters, vol. 68, no. 5, p. 616, 1996
Oriented growth of SrBi2Ta2O9 ferroelectric thin films
Applied Physics Letters, vol. 69, no. 12, p. 1719, 1996
Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films
Applied Physics Letters, vol. 68, no. 4, p. 566, 1996
Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique
Journal of Applied Physics, vol. 80, no. 4, p. 2349, 1996
Grain orientation and dielectric properties of Sr2Nb2O7 ceramics prepared by chemical coprecipitation method
Ferroelectrics, vol. 186, pp. 137–140, 1996
Processing of PbTiO3 thin films. II. In situ investigation of stress relaxation
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 14, no. 1, p. 7, 1996
Macromolecules, vol. 28, no. 22, pp. 7343–7348, 1995
Novel fatigue-free layered structure ferroelectric thin films
Materials Science and Engineering B, vol. 32, no. 1-2, pp. 75–81, 1995
Minimization of fatigue in ferroelectric films
Physica Status Solidi (a), vol. 151, no. 2, pp. 467–480, 1995
Retention and imprint properties of ferroelectric thin films
Physica Status Solidi (a), vol. 151, no. 1, pp. 171–182, 1995
c-Axis oriented ferroelectric SrBi2(TaxNb2$minus;x)O9 thin films
Materials Science and Engineering B, vol. 32, no. 1-2, pp. 83–88, 1995
Fatigue-free SrBi2(TaxNb1$minus;x)2O9 ferroelectric thin films
Materials Science and Engineering B, vol. 34, no. 1, pp. L4–L8, 1995
The shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films
Ferroelectrics Letters Section, vol. 20, no. 1, pp. 27–34, 1995
Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O3 Thin Films
Journal of the American Ceramic Society, vol. 77, no. 7, pp. 1799–1812, 1994
Modified Envelope Method for Obtaining Optical Properties of Weakly Absorbing Thin Films and Its Application to Thin Films of Pb(Zr,Ti)O3 Solid Solutions
Journal of the American Ceramic Society, vol. 77, no. 4, pp. 929–938, 1994
Structure Development Study of Pb (Zr, Ti)O3 Thin Films by an Optical Method
Journal of the American Ceramic Society, vol. 77, no. 6, pp. 1486–1492, 1994
Molten salt synthesis and dielectric properties of ? (PFN-PFT) solid solutions
Materials Science and Engineering B, vol. 22, no. 2-3, pp. 133–140, 1994
Stress measurement as a new technique for determining glass transition temperatures and other thermomechanical properties of polymers
Journal of Materials Science Letters, vol. 13, no. 4, pp. 236–237, 1994
Metalorganic Chemical Vapor Deposition of Lead Titanate
Chemistry of Materials, vol. 6, no. 11, pp. 1955–1960, 1994
Modified sol-gel process for preparation of lead zjrconate titanate thin films
Ferroelectrics Letters Section, vol. 16, no. 5, pp. 143–156, 1993
Microstructure and properties of lead ferroniobate ceramics (Pb(Fe0.5Nb0.5)O3)
Materials Science and Engineering B, vol. 21, no. 1, pp. 26–35, 1993
The explicit expression for the enthalpy of formation of organometallic compounds of Si, Ge and Sn
Materials Chemistry and Physics, vol. 35, no. 2, pp. 151–154, 1993
Enthalpies of formation of organometallic compounds with first-order index of the molecule
Chemistry of Materials, vol. 5, no. 4, pp. 535–539, 1993
Chemistry of Materials, vol. 5, no. 11, pp. 1636–1640, 1993
Electrochemical models of failure in oxide perovskites
Integrated Ferroelectrics, vol. 3, no. 4, pp. 365–376, 1993
A Two-Dimensional Step Coverage Boundary Element Model with Consideration of Moving Deposition Fronts
Journal of The Electrochemical Society, vol. 140, no. 7, p. 2128, 1993
Reactive Ion Etching of Lead Zirconate Titanate (PZT) Thin Film Capacitors
Journal of The Electrochemical Society, vol. 140, no. 9, p. 2635, 1993
Electrodes for PbZr[sub x]Ti[sub 1−x]O[sub 3] Ferroelectric Thin Films
Journal of The Electrochemical Society, vol. 140, no. 9, p. 2640, 1993
Influence of Stresses on the Properties of Ferroelectric BaTiO[sub 3] Thin Films
Journal of The Electrochemical Society, vol. 140, no. 10, p. 2981, 1993
Diamond --A Novel Sensing Material
Journal of Intelligent Material Systems and Structures, vol. 4, no. 1, pp. 129–135, 1993
Fatigue and Hysteresis Modeling of Ferroelectric Materials
Journal of Intelligent Material Systems and Structures, vol. 4, no. 4, pp. 490–495, 1993
Time-Dependent Dielectric Breakdown in BaTiO[sub 3] Thin Films
Journal of The Electrochemical Society, vol. 140, no. 9, p. L133, 1993
The Role of Gas-Phase Reactions in Modeling of the Forced-Flow Chemical Vapor Infiltration Process
Journal of The Electrochemical Society, vol. 140, no. 7, p. 2121, 1993
Low Temperature CVD of SiO[sub 2] Films Using Novel Precursors
Journal of The Electrochemical Society, vol. 139, no. 9, p. 2682, 1992
Metallorganic chemical vapor deposition: a new era in optical coating technology
Materials Chemistry and Physics, vol. 31, no. 4, pp. 341–345, 1992
Fatigue modeling of lead zirconate titanate thin films
Materials Science and Engineering B, vol. 13, no. 4, pp. 319–322, 1992
Ultra-thin TiO2 films by a novel method
Materials Science and Engineering B, vol. 13, no. 4, pp. 299–303, 1992
Molten Salt Synthesis of a Complex Perovskite, Pb(Fe0.5Nb0.5)O3
Journal of the American Ceramic Society, vol. 74, no. 1, pp. 38–41, 1991
Formation of Lead Niobates in Molten Salt Systems
Journal of the American Ceramic Society, vol. 74, no. 1, pp. 42–47, 1991
A Unified Approach for Modeling CVD Processes
Journal of The Electrochemical Society, vol. 138, no. 4, p. 962, 1991
Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO[sub 2] from Tetraethoxysilane
Journal of The Electrochemical Society, vol. 137, no. 2, p. 624, 1990
Reactions Which Form Both Silicide and Nitride Layers
Journal of the American Ceramic Society, vol. 73, no. 3, pp. 509–515, 1990
Determination of Rate Controlling Step in CVD Processes with Gas Phase and Surface Reactions
Japanese Journal of Applied Physics, vol. 29, no. Part 1, No. 7, pp. 1310–1315, 1990
Interaction of Titanium with Silica After Rapid Thermal Annealing in Argon, Nitrogen, and Oxygen
Journal of the American Ceramic Society, vol. 72, no. 10, pp. 1947–1954, 1989
Decomposition Chemistry of Tetraethoxysilane
Journal of the American Ceramic Society, vol. 72, no. 9, pp. 1615–1621, 1989
Microwave Loss Quality of BaZn13Ta2/3O3 Ceramics
Journal of the American Ceramic Society, vol. 68, no. 10, pp. 546–551, 1985
Inhibition of reduction of BaTiO3
Journal of Materials Science, vol. 15, no. 8, pp. 2113–2115, 1980