Anant Agarwal

Articles in Scholarly Journals [Incomplete List]

  1. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
    IEEE Electron Device Letters, vol. 28, no. 7, pp. 587–589, 2007
  2. Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H–SiC JBS Rectifiers
    IEEE Transactions on Electron Devices, vol. 53, no. 2, pp. 363–368, 2006
  3. Temperature Dependence of the Current Gain in Power 4H-SiC NPN BJTs
    IEEE Transactions on Electron Devices, vol. 53, no. 5, pp. 1245–1249, 2006
  4. The Fast Neutron Response of 4H Silicon Carbide Semiconductor Radiation Detectors
    IEEE Transactions on Nuclear Science, vol. 53, no. 3, pp. 1666–1670, 2006
  5. Characterization of Ti schottky diodes on epi-regrown 4H-SiC
    Journal of Electronic Materials, vol. 35, no. 4, pp. 754–757, 2006
  6. SiC BJTs
    International Journal of High Speed Electronics and Systems, vol. 16, no. 3, p. 855, 2006
  7. International Journal of High Speed Electronics and Systems, vol. 15, no. 4, p. 931, 2005
  8. On the homogeneity of the turn-on process in high-voltage 4H?SiC thyristors
    Solid-State Electronics, vol. 49, no. 2, pp. 233–237, 2005
  9. d/d effect in high-voltage (1.5kV) 4H–SiC thyristors
    Solid-State Electronics, vol. 49, no. 12, pp. 2011–2015, 2005
  10. dV/dt effect in high-voltage 4H-SiC thyristors
    Semiconductor Science and Technology, vol. 20, no. 8, pp. 793–795, 2005
  11. Power bipolar devices based on silicon carbide
    Semiconductors, vol. 39, no. 8, pp. 861–877, 2005
  12. 1000-V, 30-A 4H-SiC BJTs With High Current Gain
    IEEE Electron Device Letters, vol. 26, no. 3, pp. 175–177, 2005
  13. 4 kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors
    IEEE Electron Device Letters, vol. 26, no. 7, pp. 470–472, 2005
  14. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
    IEEE Electron Device Letters, vol. 25, no. 8, pp. 556–558, 2004
  15. International Journal of High Speed Electronics and Systems, vol. 14, no. 3, p. 879, 2004
  16. Low frequency noise in 4H-SiC BJTs
    Semiconductor Science and Technology, vol. 19, no. 7, pp. 950–952, 2004
  17. Fast switch-off of high voltage 4H?SiC npn bipolar junction transistor from deep saturation regime
    Solid-State Electronics, vol. 48, no. 3, pp. 491–493, 2004
  18. The critical charge density in high voltage 4H-SiC thyristors
    Solid-State Electronics, vol. 47, no. 4, pp. 699–704, 2003
  19. The critical charge concept for 4H-SiC-based thyristors
    Solid-State Electronics, vol. 47, no. 9, pp. 1581–1587, 2003
  20. Inductive switching of 4H-SiC gate turn-off thyristors
    IEEE Electron Device Letters, vol. 23, no. 6, pp. 318–320, 2002
  21. 10 A, 2.4 kV Power DiMOSFETs in 4H-SiC
    IEEE Electron Device Letters, vol. 23, no. 6, pp. 321–323, 2002
  22. Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
    Solid-State Electronics, vol. 46, no. 4, pp. 567–572, 2002
  23. Current rise time constants in switch-on process of SiC thyristors
    Solid-State Electronics, vol. 46, no. 4, pp. 525–528, 2002
  24. Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode
    Solid-State Electronics, vol. 46, no. 11, pp. 1953–1957, 2002
  25. Status and prospects for SiC power MOSFETs
    IEEE Transactions on Electron Devices, vol. 49, no. 4, pp. 658–664, 2002
  26. Half-bridge inverter using 4H-SiC gate turn-off thyristors
    IEEE Electron Device Letters, vol. 23, no. 4, pp. 194–196, 2002
  27. 1800 V NPN bipolar junction transistors in 4H-SiC
    IEEE Electron Device Letters, vol. 22, no. 3, pp. 124–126, 2001
  28. 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
    IEEE Electron Device Letters, vol. 22, no. 3, pp. 127–129, 2001
  29. Low-dose aluminum and boron implants in 4H and 6H silicon carbide
    Journal of Applied Physics, vol. 90, no. 6, p. 2796, 2001
  30. Temperature dependence of turn-on processes in 4H–SiC thyristors
    Solid-State Electronics, vol. 45, no. 3, pp. 453–459, 2001
  31. 4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
    Solid-State Electronics, vol. 44, no. 2, pp. 303–308, 2000
  32. In-depth analysis of SiC GTO thyristor performance using numerical simulations
    Solid-State Electronics, vol. 44, no. 2, pp. 353–358, 2000
  33. Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor
    Solid-State Electronics, vol. 44, no. 12, pp. 2155–2159, 2000
  34. Low-dose nitrogen implants in 6H–silicon carbide
    Applied Physics Letters, vol. 76, no. 14, p. 1896, 2000
  35. Interface trap profile near the band edges at the 4H-SiC/SiO[sub 2] interface
    Applied Physics Letters, vol. 76, no. 16, p. 2250, 2000
  36. Hall mobility and free electron density at the SiC/SiO[sub 2] interface in 4H–SiC
    Applied Physics Letters, vol. 77, no. 20, p. 3281, 2000
  37. A 475-V high-voltage 6H-SiC lateral MOSFET
    IEEE Electron Device Letters, vol. 20, no. 8, pp. 431–433, 1999
  38. Advances in SiC materials and devices: an industrial point of view
    Materials Science and Engineering B, vol. 61-62, no. 1-2, pp. 9–17, 1999
  39. Status of SiC power devices at Northrop Grumman
    Diamond and Related Materials, vol. 8, no. 2-5, pp. 295–301, 1999
  40. SiC and GaN wide bandgap semiconductor materials and devices
    Solid-State Electronics, vol. 43, no. 8, pp. 1459–1464, 1999
  41. 4H-SiC power devices for use in power electronic motor control
    Solid-State Electronics, vol. 42, no. 12, pp. 2165–2176, 1998
  42. Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC
    Applied Physics Letters, vol. 72, no. 16, p. 2026, 1998
  43. SiC for Microwave Power Transistors
    physica status solidi (a), vol. 162, no. 1, pp. 441–457, 1997
  44. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
    IEEE Electron Device Letters, vol. 18, no. 11, pp. 518–520, 1997
  45. 1.1 kV 4H-SiC power UMOSFETs
    IEEE Electron Device Letters, vol. 18, no. 12, pp. 586–588, 1997
  46. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
    IEEE Electron Device Letters, vol. 18, no. 12, pp. 592–594, 1997
  47. Direct current characterization of depletion-mode 6H_SiC MOSFETs from 294 to 723 K
    Solid-State Electronics, vol. 39, no. 6, pp. 777–784, 1996
  48. Molecular beam epitaxy growth and characterization of GaN and AlxGa1-xN on 6H-SiC
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 14, no. 3, p. 896, 1996
  49. Low frequency noise in 6H-SiC MOSFET's
    IEEE Electron Device Letters, vol. 16, no. 6, pp. 274–276, 1995
  50. MICROX-an all-silicon technology for monolithic microwave integrated circuits
    IEEE Electron Device Letters, vol. 14, no. 5, pp. 219–221, 1993