Francesco La Via0000-0002-6842-581X
Francesco La Via was born in Catania, Italy, in September 1961. He received the M.S. degree in physics from the Catania University, Catania, Italy, in 1985. From 1985 to 1990, he finished a fellowship at SGS-Thompson, Catania, Italy. In 1990, he joined the CNR Institute for Microelectronic, Catania, Italy as a Researcher. During this time, he also spent nine months as a Visiting Scientist at the Philips National Laboratory, Eindhoven, The Netherlands, working on a project for the use of epitaxial cobalt silicide in permeable base transistors. In 2001 he became Senior Researcher at the CNR Institute for Microelectronic and Microsensors, and he is responsible for the research group that works on the new metallization schemes for silicon and silicon carbide. Since 2003, he has been responsible for the Division of CNR-IMM that developed new CVD reactors and new processes for silicon carbide epitaxy and heteroepitaxy. He is responsible for several industrial research projects in the field of SiC epitaxial growth and new systems for CVD and sublimation growth. In this period, he has published more than 160 papers on JCR journals and two invited papers. He has presented five invited contributions to international conferences and has organized several conferences and tutorials. He is a Referee of some international journals: Applied Physics Letters, Journal of Applied Physics, Journal of Material Research, IEEE Transaction on Electron Devices, Journal of Electrochemical Society, and Chemical Vapour Deposition.
Biography Updated on 14 April 2011