Research Article

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Figure 1

(a)–(c) SEM micrographs inside sapphire with a laser irradiation condition of and , and after etching (a) at room temperature for 72 hours, (b) at for 24 hours, and (c) at for 24 hours. (d) Optical micrograph of sapphire after etching at for 48 hours. In this micrograph, both the surface and subsurface are visible.
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(a)
892721.fig.001b
(b)
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(c)
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(d)