Conference Paper
Antireflective Nanocomposite Based Coating on Crystalline Silicon Solar Cells for Building-Integrated Photovoltaic Systems
Table 1
Solar cell parameters used during PCID simulation.
| | Parameter | Value |
| | Bulk silicon material thickness | 200 μm | | Bulk doping concentration | 1016 cc | | Emitter n+ junction depth | 0.3 μm | | Diffusion: sheet resistance/peak doping |
45 /; 1 × 1019 cc | | Rear p+ concentration | 1 × 1019 cc | | Bulk carrier lifetime | 1000 μs | | Surface recombination velocity at emitter and rear surface | 10000 cm/s |
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