Figure 5:
Typical
𝐼
𝐷
-
𝑉
𝐺
characteristics (Coulomb oscillations) of SET simulated by the simulator NEMO-VN2 for various values of
𝑉
𝐷
= 50 mV, 100 mV, and 200 mV at room temperature,
𝑇
= 300 K. The SET device parameters are
𝐿
= 10 nm,
𝐶
𝐺
=
𝐶
𝑆
=
𝐶
𝐷
= 1 aF, and
𝑅
𝑆
=
𝑅
𝐷
= 1 MΩ.