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ISRN Nanotechnology
Volume 2012 (2012), Article ID 705803, 4 pages
doi:10.5402/2012/705803
Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films
School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
Received 12 April 2012; Accepted 27 June 2012
Academic Editors: K. S. Coleman and C.-L. Hsu
Copyright © 2012 Dewei Chu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
High quality Co-doped ZnO films were prepared with electrodeposition. The correlation among the surface morphology, lattice structure, Co-dopant distribution, and resistance switching properties of the as-deposited films were investigated. It is found that resistance switching behaviour could be manipulated by controlling the composition of Co in the ZnO films. The significant enhancement of resistance switching was achieved with 5 at% Co doping in the films, and the possible switching mechanism was also discussed.