Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Figure 7

Variation of the barrier height with temperature for Pd/Au/n-GaN from [12] and Ag/p-GaN [14] (symbols), fitted to the 𝐸_𝑇 versus 𝑇 exposed by solid line for 𝑛-type and dot line for p-type GaN.