Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

Figure 18

Resistivity of hole layer versus temperature for 𝑝=5,6,7,8,9×10¹⁰ cm⁻² at 𝐵=0, (a) without electrons (𝑛=0) and (b) with electrons (𝑛=𝑝). (c) Magnetoresistance 𝜌_𝑥𝑥(𝐵) of hole layer for 𝑝=6,7,8,9×10¹⁰ cm⁻² with no electrons present (𝑛=0), at 𝑇=0.3 K. (d) “Metallic” hole layer 𝜌_𝑥𝑥(𝑇) for 𝑝=9×10¹⁰ cm⁻², 𝑛=0. (e) Arrhenius plot (ln(𝜌) against 1/𝑇) for “insulating” hole layer 𝜌_𝑥𝑥(𝑇) with 𝑛=𝑝=9×10¹⁰ cm⁻², showing good fit to an exponential rise. (Device: B138/C4-2-10 nm Barrier).

(a)

(b)

(c)

(d)

(e)