Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport
Figure 2
The band bending shown on (a) is not possible to achieve in GaAs for a closely spaced EHBL. The electric field in the barrier would be too high to sustain or even obtain self-consistently by modulation doping alone. One has to resort to making the electrochemical potential discontinuous (as shown on (b)). This was already understood in 1992.
