Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

Figure 21

Resistivities of the hole (a) and electron layer (b), (c), and (d), versus temperature for fixed hole density 𝑝=1.6×10¹¹ cm⁻², and varied electron density 𝑛=4,6,8×10¹⁰ cm⁻². (Device: B138/C4-1-10 nm Barrier).

(a)

(b)

(c)

(d)