The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

Table 2

Values of carrier concentration and 𝜇_𝐻 for undoped and doped CdTe thin films deposited at RT and 423 K.

CdTe thin films	𝑇𝑠 (K)	Carrier concentration × 10^13 (cm^−3)	𝜇𝐻×10^−2 (cm^2/ V·s)	Type
Undoped	RT	1.107	0.756	P
	423	0.483	6.599	N
Doped with
0.5% Al	RT	0.172	4.360	P
	423	0.856	5.052	N
1.5% Al	RT	2.628	2.214	N
	423	1.151	4.561	N
2.5% Al	RT	6.961	5.997	N
	423	3.142	1.869	N
0.5% Sb	RT	3.836	2.248	P
	423	0.397	8.028	P
1.5% Sb	RT	6.101	7.211	P
	423	5.073	4.891	P
2.5% Sb	RT	13.292	11.783	P
	423	12.566	8.932	P