High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers

Figure 4

The EL spectra of sample with GaN barriers in the driving currents range from 1 to 100 mA at temperature (a) 200 K, (b) 300 K, and (c) 380 K.

(a)  T = 200 K

(b) T = 300 K

(c) T = 380 K