High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers
Figure 7
(a) Temperature-dependent EL quantum efficiency ratio of the sample with MQBs to the sample with GaN barriers. The inset shows the dependence of the EL efficiency on temperature for the samples. The driving current is 10 mA. (b) Temperature-dependent EL quantum efficiency ratio of the samples in the driving current range 10 to 100 mA.
