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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 364376, 8 pages
http://dx.doi.org/10.1155/2012/364376
Research Article

Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped S r T i O 3 Substrate

1School of Physics and Technology and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan University, Wuhan 430072, China
2School of Information Engineering, Hubei University for Nationalities, Enshi, Hubei 445000, China

Received 22 May 2012; Accepted 31 July 2012

Academic Editor: A. Alexandrov

Copyright © 2012 Yongdan Zhu and Meiya Li. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yongdan Zhu and Meiya Li, “Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate,” Advances in Condensed Matter Physics, vol. 2012, Article ID 364376, 8 pages, 2012. doi:10.1155/2012/364376