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<table>(Color online) <i>I-V</i> characteristics of switching memory cell in (a) positive bias region and (b) negative bias regions plotted in log-log scale.</table>

Advances in Condensed Matter Physics

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Figure 6: Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped <svg style="vertical-align:-4.67647pt;width:64.425003px;" id="M1" height="21.262501" version="1.1" viewBox="0 0 64.425003 21.262501" width="64.425003"  xmlns="http://www.w3.org/2000/svg">
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Figure 6 | Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped 
	
		
			
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Advances in Condensed Matter Physics

Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped S r T i O 3 Substrate

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Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate