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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 439617, 10 pages
http://dx.doi.org/10.1155/2012/439617
Research Article

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

1Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, Russia
2Mathematical Department, Faculty of Radiophysics, Nizhny Novgorod State University, 65 Il’insky Street, Nizhny Novgorod 603950, Russia

Received 5 March 2012; Revised 1 June 2012; Accepted 15 June 2012

Academic Editor: Jörg Fink

Copyright © 2012 Marina G. Mynbaeva et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Marina G. Mynbaeva, Evgeny L. Pankratov, Evgeniy N. Mokhov, and Karim D. Mynbaev, “Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide,” Advances in Condensed Matter Physics, vol. 2012, Article ID 439617, 10 pages, 2012. doi:10.1155/2012/439617