439617.fig.001a
(a)
439617.fig.001b
(b)
439617.fig.001c
(c)
Figure 1: Transmission (a) and scanning ((b) and (c)) electron microscopy images of the cleft edge of porous layer in SiC: straight after anodization (a), after 1700°C anneal for 120 min (b), and after 1700°C anneal for 240 min (c).