Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide
Figure 2
Experimental profiles showing erbium (a) and vanadium (b) concentration versus depth after diffusion at 2200°C for 30 min (curves 1 and 2) and 120 min (curves 1′ and 2′), in: 1: nonporous SiC, 2: porous SiC.
