Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide
Figure 4
Distribution in non-porous SiC (curves 1) and porous SiC (curves 2) of: erbium after diffusion at 1700°C for 120 min (a), vanadium after diffusion at 2200°C for 120 min (b), and erbium after diffusion at 2200°C for 120 min (c). Points show experimental data, solid curves show results of fitting.
