Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Table 1

Diffusion parameters obtained from the fitting.

Dopant	𝐷𝑉,cm^2s^−1	𝐷𝑉𝑆,cm^2s^−1	𝐷𝐶𝑉𝐿,cm^2s^−1	𝐷𝐶𝑆𝐿,cm^2s^−1	𝑃,cm^−3
𝑉, 2200^°C	9.27⋅10^−14	2.78⋅10^−12	1.47⋅10^−14	2.36⋅10^−14	2.48⋅10^19
Er, 1700^°C	2.48⋅10^−14	1.41⋅10^−13	3.58⋅10^−14	2.57⋅10^−14	1.90⋅10^19
Er, 2200^°C	7.75⋅10^−14	8.65⋅10^−13	2.07⋅10^−13	8.42⋅10^−14	2.93⋅10^19